MT28EW512ABA1LPC-0SIT

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MT28EW512ABA1LPC-0SIT

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IC FLASH 512MBIT PARALLEL 64LBGA

  • ПроизводительКомпания Micron Technology Inc.

  • Мфр. Часть #MT28EW512ABA1LPC-0SIT

  • В наличии5810

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Спецификации

Атрибут Ценность
Part Status Active
Base Product Number MT28EW512
DigiKey Programmable Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 512Mbit
Memory Organization 64M x 8, 32M x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 60ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package 64-LBGA
Supplier Device Package 64-LBGA (11x13)
Packaging Tray
Access Time 95 ns

Обзор

Description

The MT28EW512ABA1LPC-0SIT is a high-performance flash memory component designed by Micron Technology. It is part of the MT28EW series, which offers robust non-volatile memory solutions suitable for various applications, including automotive, industrial, and consumer electronics. This particular model features a storage capacity of 512 megabits, organized in a x8 or x16 configuration, allowing flexibility in data handling and processing.
Key characteristics of the MT28EW512ABA1LPC-0SIT include its ability to operate across a wide temperature range, making it suitable for demanding environments. It supports fast data transfer speeds, which enhances system performance and efficiency. The device is engineered for reliability and endurance, featuring advanced wear-leveling algorithms and error correction code (ECC) to ensure data integrity over extended periods.
Additionally, the MT28EW512ABA1LPC-0SIT comes with industry-standard packaging and interfaces, facilitating easy integration into various electronic systems. Its low power consumption also makes it ideal for battery-operated devices, where energy efficiency is crucial.

Equivalent

The MT28EW512ABA1LPC-0SIT is a 512Mb NOR Flash memory chip by Micron. Equivalent products can be found from manufacturers like Cypress (now Infineon) and Winbond. For instance, the Cypress S29GL512S series and Winbond W25Q512JV series offer similar functionality and storage capacity. It's essential to compare specific features such as voltage, package type, and temperature ranges to ensure compatibility. Always check with manufacturers for the most accurate cross-reference information.

Features

The MT28EW512ABA1LPC-0SIT is a NAND Flash Memory device designed for a variety of storage applications. Key features include:
1. Density and Organization: It offers a storage capacity of 512 Megabits, organized as 64 Megabytes x 8 bits.
2. Performance: The device supports fast read and write operations, with typical data transfer rates suitable for high-performance applications.
3. Voltage Range: It operates within a VCC range of 1.7V to 2.0V, making it compatible with low-power systems.
4. Endurance and Reliability: The device is designed for reliable data retention and features a high endurance cycle, which is essential for frequent data access and updates.
5. Package and Temperature: It is available in a compact package suitable for space-constrained designs and operates within an industrial temperature range, ensuring functionality in various environmental conditions.
6. Interface: The device includes a standard NAND Flash interface, facilitating easy integration into existing systems.
These features make the MT28EW512ABA1LPC-0SIT well-suited for use in consumer electronics, industrial applications, and other environments requiring reliable and efficient memory solutions.

Pinout

The MT28EW512ABA1LPC-0SIT is a 512Mb (megabit) NOR Flash memory device manufactured by Micron Technology. It typically comes in a 56-pin TSOP (Thin Small Outline Package) layout. The primary function of this device is to serve as non-volatile storage, meaning it retains data even when power is removed. It is used for code storage, data storage, and execution in embedded systems.
The device supports various operations such as read, program, and erase. It also features block locking, read-while-write, and advanced security protection. The MT28EW512ABA1LPC-0SIT is designed for high-speed performance and reliability, making it suitable for applications in automotive, industrial, and consumer electronics.
For detailed pin functions and diagrams, refer to the device's datasheet, which provides comprehensive information on pin configurations and operational specifics.

Manufacturer

The MT28EW512ABA1LPC-0SIT is manufactured by Micron Technology, Inc. Micron is an American company that specializes in the production of semiconductor devices, particularly memory and storage solutions. The company is renowned for its dynamic random-access memory (DRAM), NAND flash memory, and other semiconductor products. Micron serves a wide range of markets, including consumer electronics, mobile devices, automotive, and data centers, contributing significantly to the tech industry's memory and storage advancements.

Application

The MT28EW512ABA1LPC-0SIT is a NOR Flash memory chip commonly used in applications requiring reliable and non-volatile storage. It is suitable for code storage and execution in embedded systems, firmware storage in consumer electronics, and industrial automation systems. The chip is also utilized in automotive applications, where robust data retention and quick access times are essential. Additionally, it can be used in networking and telecommunications equipment for storing configuration data and boot code. Furthermore, its high endurance and reliability make it apt for use in aerospace and defense systems where long-term data integrity is critical.

Package

The MT28EW512ABA1LPC-0SIT is a NOR Flash memory device from Micron. It is offered in a 56-pin TSOP (Thin Small Outline Package) type I package, suitable for applications requiring high-density, non-volatile storage with fast read access and low power consumption.

Frequently Asked Questions


Q: What is the memory density and organization of this NOR Flash?
A: It has a 512Mbit density, organized as 64M x 8-bit or 32M x 16-bit via a parallel interface.


Q: What voltage supply range does this device support?
A: It supports a wide voltage supply range from 2.7V to 3.6V, suitable for low-power embedded systems.


Q: What is the typical random access time for this component?
A: The random access time is 95 ns, providing fast read performance for code-execution applications.


Q: Can this memory operate in harsh temperature environments?
A: Yes, it operates over an industrial temperature range of -40°C to 85°C (TA).


Q: What is the package type for this Micron NOR Flash?
A: It comes in a 64-ball LBGA (11x13mm) surface-mount package, supplied in a tray.


Q: What is the Page/Word write cycle time for this device?
A: The write cycle time is 60ns per word or page, enabling efficient programming operations.


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