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MT28EW512ABA1LPC-0SIT
+БОМIC FLASH 512MBIT PARALLEL 64LBGA
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ПроизводительКомпания Micron Technology Inc.
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Мфр. Часть #MT28EW512ABA1LPC-0SIT
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В наличии5810
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Part Status | Active |
| Base Product Number | MT28EW512 |
| DigiKey Programmable | Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 512Mbit |
| Memory Organization | 64M x 8, 32M x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 60ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package | 64-LBGA |
| Supplier Device Package | 64-LBGA (11x13) |
| Packaging | Tray |
| Access Time | 95 ns |
Обзор
Description
Key characteristics of the MT28EW512ABA1LPC-0SIT include its ability to operate across a wide temperature range, making it suitable for demanding environments. It supports fast data transfer speeds, which enhances system performance and efficiency. The device is engineered for reliability and endurance, featuring advanced wear-leveling algorithms and error correction code (ECC) to ensure data integrity over extended periods.
Additionally, the MT28EW512ABA1LPC-0SIT comes with industry-standard packaging and interfaces, facilitating easy integration into various electronic systems. Its low power consumption also makes it ideal for battery-operated devices, where energy efficiency is crucial.
Equivalent
Features
1. Density and Organization: It offers a storage capacity of 512 Megabits, organized as 64 Megabytes x 8 bits.
2. Performance: The device supports fast read and write operations, with typical data transfer rates suitable for high-performance applications.
3. Voltage Range: It operates within a VCC range of 1.7V to 2.0V, making it compatible with low-power systems.
4. Endurance and Reliability: The device is designed for reliable data retention and features a high endurance cycle, which is essential for frequent data access and updates.
5. Package and Temperature: It is available in a compact package suitable for space-constrained designs and operates within an industrial temperature range, ensuring functionality in various environmental conditions.
6. Interface: The device includes a standard NAND Flash interface, facilitating easy integration into existing systems.
These features make the MT28EW512ABA1LPC-0SIT well-suited for use in consumer electronics, industrial applications, and other environments requiring reliable and efficient memory solutions.
Pinout
The device supports various operations such as read, program, and erase. It also features block locking, read-while-write, and advanced security protection. The MT28EW512ABA1LPC-0SIT is designed for high-speed performance and reliability, making it suitable for applications in automotive, industrial, and consumer electronics.
For detailed pin functions and diagrams, refer to the device's datasheet, which provides comprehensive information on pin configurations and operational specifics.
Manufacturer
Application
Package
Frequently Asked Questions
Q: What is the memory density and organization of this NOR Flash?
A: It has a 512Mbit density, organized as 64M x 8-bit or 32M x 16-bit via a parallel interface.
Q: What voltage supply range does this device support?
A: It supports a wide voltage supply range from 2.7V to 3.6V, suitable for low-power embedded systems.
Q: What is the typical random access time for this component?
A: The random access time is 95 ns, providing fast read performance for code-execution applications.
Q: Can this memory operate in harsh temperature environments?
A: Yes, it operates over an industrial temperature range of -40°C to 85°C (TA).
Q: What is the package type for this Micron NOR Flash?
A: It comes in a 64-ball LBGA (11x13mm) surface-mount package, supplied in a tray.
Q: What is the Page/Word write cycle time for this device?
A: The write cycle time is 60ns per word or page, enabling efficient programming operations.