MT29F1G08ABAEAH4:E

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MT29F1G08ABAEAH4:E

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IC FLASH 1GBIT PARALLEL 63VFBGA

  • ПроизводительКомпания Micron Technology Inc.

  • Мфр. Часть #MT29F1G08ABAEAH4:E

  • В наличии2382

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Спецификации

Атрибут Ценность
Part Status Obsolete
Base Product Number MT29F1G08
DigiKey Programmable Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 1Gbit
Memory Organization 128M x 8
Memory Interface Parallel
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount
Package 63-VFBGA
Supplier Device Package 63-VFBGA (9x11)
Packaging Bulk

Обзор

Description

The MT29F1G08ABAEAH4:E is a NAND Flash memory chip manufactured by Micron Technology. This component is part of their SLC (Single-Level Cell) NAND Flash range, designed for reliability and performance in embedded systems. With a storage capacity of 1Gb (gigabit), it is commonly used in applications that require robust data storage solutions, such as industrial devices, consumer electronics, and automotive systems.
The chip features a standard 8-bit interface and operates on a single 3.3V power supply, making it suitable for various environments. It is designed for high endurance and often used in products requiring frequent write and erase cycles. The NAND architecture allows for higher density storage compared to NOR Flash, which is ideal for storing large amounts of data.
Micron’s NAND Flash technology focuses on durability, speed, and efficiency, ensuring data integrity and long lifespan. The MT29F1G08ABAEAH4:E chip typically supports advanced features like Error Correction Code (ECC) and wear leveling to enhance data reliability and longevity.

Equivalent

The MT29F1G08ABAEAH4:E is a 1Gb NAND Flash memory chip by Micron. Equivalent products from other manufacturers might include:
1. Samsung: K9F1G08U0D, a 1Gb SLC NAND Flash.
2. Toshiba/Kioxia: TC58NVG0S3HBAI4, a 1Gb SLC NAND Flash.
3. SK Hynix: H27U1G8F2BTR, a 1Gb SLC NAND Flash.
These chips typically have similar specifications and can be used interchangeably in applications requiring 1Gb NAND Flash. Always verify compatibility with your specific application requirements.

Features

The MT29F1G08ABAEAH4:E is a NAND flash memory chip from Micron Technology. Key features include:
1. Capacity: 1 Gigabit (128 Megabytes).
2. Interface: 8-bit NAND interface.
3. Architecture: Single-level cell (SLC) technology, providing faster read and write speeds, greater endurance, and improved reliability compared to multi-level cell architectures.
4. Package Type: Available in a TSOP (Thin Small Outline Package) for easy integration into various electronic devices.
5. Performance: Offers high-speed data transfer capabilities with typical read and write operations.
6. Endurance: High endurance suitable for applications requiring frequent write/erase cycles.
7. Operating Voltage: Typically operates at a voltage range around 3.3V, common for NAND flash technologies.
8. Temperature Range: Designed to operate over a wide temperature range, accommodating various environmental conditions.
9. Applications: Suitable for use in consumer electronics, industrial applications, and embedded systems due to its robust performance and reliability.
These features make it a versatile choice for data storage solutions in numerous applications.

Pinout

The MT29F1G08ABAEAH4:E is a NAND Flash memory chip manufactured by Micron Technology. It typically comes in a TSOP (Thin Small Outline Package) with a pin count of 48. The primary function of this NAND Flash chip is to provide non-volatile storage, which retains data without a power supply. It is commonly used in various electronic devices for data storage purposes.
Key functions of the MT29F1G08ABAEAH4:E include:
1. Data Storage: It allows for the storage of data in a non-volatile manner, meaning data is retained even when the power is turned off.
2. Read/Write Operations: The chip supports basic read and write operations, enabling data to be stored and retrieved as needed.
3. High Density: As a 1Gb NAND Flash memory, it offers a substantial amount of storage capacity for various applications.
4. Interface Compatibility: It uses a standard NAND interface, making it compatible with a wide range of controllers and systems.
This type of NAND Flash memory is typically used in applications like USB drives, memory cards, and solid-state drives (SSDs).

Manufacturer

The MT29F1G08ABAEAH4:E is a NAND flash memory chip manufactured by Micron Technology, Inc. Micron is an American multinational corporation based in Boise, Idaho. It specializes in the production of memory and storage solutions, including dynamic random-access memory (DRAM), NAND flash memory, and other semiconductor devices. The company serves various sectors, including computing, networking, automotive, and mobile, among others. Micron is recognized as one of the leading producers in the memory and storage industry, known for its innovation and advancements in technology that cater to the growing data demands in various applications.

Application

The MT29F1G08ABAEAH4:E is a NAND Flash memory chip primarily used in areas requiring reliable, non-volatile storage. Its key applications include:
1. Consumer Electronics: Used in devices like smartphones, tablets, and digital cameras for data storage.
2. Industrial Applications: Employed in machinery and equipment requiring robust data storage solutions.
3. Automotive Systems: Utilized in infotainment systems and navigation units.
4. Computing: Integrated into SSDs and other storage devices in computers and data centers for enhanced performance.
5. Embedded Systems: Incorporated in IoT devices and other embedded applications for efficient data management.
These areas demand efficient data storage solutions with high endurance and reliability, which NAND Flash memory chips like this provide.

Package

The MT29F1G08ABAEAH4:E is a NAND flash memory chip typically packaged in a TSOP (Thin Small Outline Package). This package type provides a compact and efficient form factor for mounting on circuit boards, commonly used in consumer electronics, computers, and other devices requiring flash storage.

Frequently Asked Questions


Q: What is the memory capacity and organization of the MT29F1G08ABAEAH4:E?
A: It is a 1Gbit NAND Flash memory organized as 128M x 8 bits, suitable for high-density data storage applications.


Q: What is the operating voltage range for this component?
A: It operates within a supply voltage range of 2.7V to 3.6V, making it compatible with common 3.3V logic systems.


Q: Which memory interface does this NAND Flash chip use?
A: It uses a parallel memory interface, which is standard for NAND Flash devices and enables high-speed data transfers.


Q: What is the operating temperature range for this device?
A: It is rated for commercial temperature operation from 0°C to 70°C (TA), suitable for typical consumer and industrial environments.


Q: What package type is available for this NAND Flash?
A: It comes in a 63-ball VFBGA package (9x11mm), designed for surface mount assembly and space-constrained PCB layouts.


Q: Is this component programmable or verified for current designs?
A: Yes, it is DigiKey Programmable Verified, but note its Part Status is marked as Obsolete, so it is not recommended for new designs.


Q: What is the memory technology used in this part?
A: It utilizes FLASH - NAND technology, which provides non-volatile storage with high density and fast write/erase performance.


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