MT29F2G08ABAEAH4-AITX:E

MT29F2G08ABAEAH4-AITX:E is Micron’s 2‑gigabit NAND flash memory. It is a multi‑level cell (MLC) NAND device with an 8‑bit data bus (x8) and ONFi‑compatible interface. The device provides up to 256 MB of raw storage and is intended to be used with a flash memory controller to handle wear leveling, error correction (ECC), and bad‑block management. It supports standard NAND operations (read, program/page write, and block erase) and uses the typical page/block organization common to Micron NAND parts. The exact page size and block layout vary with revision, but a 2 KB‑class page is typical for this family. The AITX:E suffix denotes a specific packaging/temperature/lead‑free variant. For precise electrical/timing specs, endurance, data retention, voltage rails, and ECC requirements, consult the MT29F2G08ABAEAH4 datasheet and the -AITX:E packaging guide.

MT29F2G08ABAEAH4-AITX:E is a 2 Gbit (256 MB), x8 NAND flash (ONFI-compatible). Equivalents (2 Gbit, x8, ONFI 2.x) from other vendors include: Hynix K9F2G08U0M; Toshiba TC58NVG0S3A; Winbond W29N02GV. Verify exact page size (2K/4K), voltage, and timing via datasheets and cross-reference tables for the -AITX:E packaging variant.

Here are the likely features of MT29F2G08ABAEAH4-AITX:E (Micron 2Gbit NAND, extended temp):
- Capacity/Type: 2 Gbit NAND flash, MLC, x8 I/O
- Interface/Grade: ONFI-compatible; extended temperature (E) grade
- Page/Block: 2 KB page size, 64 pages per block (128 KB/block); spare area ~64 bytes per page
- Organization: ~2,048 blocks; ~131,072 pages total (≈256 MB raw)
- Endurance/Retention: ~100K P/E cycles typical; data retention ~10 years
- Operating Voltage: 3.3 V (I/O and core typically 3.3 V rail)
- Temperature: -40°C to 85°C
- Features: bad-block management, wear leveling, multi-plane operations, copy-back/multi-plane program (ECC handled by controller)
- Packaging: 48-pin package (AITX) suitable for parallel NAND
Note: exact timing (tPROG, tR, etc.) and some specs may vary by revision; refer to the official datasheet for precise numbers.

- Pin count: 48 pins
- Function: Micron MT29F2G08ABAEAH4-AITX:E is a 2 Gbit (256 MB) NAND Flash memory device with a x8 data bus. It uses standard NAND interfaces: CE_n, CLE, ALE, WE_n, RE_n, WP_n, R/B_n, and DQ0–DQ7 (I/O data lines), plus VCC/VSS and NC pins.

- Manufacturer: Micron Technology, Inc.
- What kind of company: An American multinational semiconductor company that designs, manufactures, and sells memory and storage technologies (DRAM, NAND flash, NOR flash) for computing, data centers, mobile, and consumer devices.

MT29F2G08ABAEAH4-AITX:E is a 2 Gbit MLC NAND Flash. Typical application areas:
- Embedded non-volatile storage in mobile/handheld devices (smartphones, tablets, PDAs), cameras and camcorders, MP3 players
- Consumer electronics (set-top boxes, DVD/Blu-ray players, game consoles) requiring firmware/data storage
- Removable/embedded storage modules, memory cards, USB drives, portable media devices
- Industrial/embedded systems (data loggers, instrumentation, networking gear) for firmware and data storage
- Automotive/infotainment and other automotive electronics needing robust, compact flash storage

A 48-ball FBGA package (NAND flash memory).