MT40A512M8RH-083E:B

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MT40A512M8RH-083E:B

+БОМ

IC DRAM 4GBIT PAR 1.2GHZ 78FBGA

  • ПроизводительКомпания Micron Technology Inc.

  • Мфр. Часть #MT40A512M8RH-083E:B

  • В наличии6534

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Спецификации

Атрибут Ценность
Part Status Obsolete
Base Product Number MT40A512M8
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR4
Memory Size 4Gbit
Memory Organization 512M x 8
Memory Interface Parallel
Clock Frequency 1.2 GHz
Voltage - Supply 1.14V ~ 1.26V
Operating Temperature 0°C ~ 95°C (TC)
Mounting Type Surface Mount
Package 78-TFBGA
Supplier Device Package 78-FBGA (9x10.5)
Packaging Tray

Обзор

Description

The MT40A512M8RH-083E:B is a DRAM memory module from Micron Technology, specifically a DDR4 SDRAM. It is commonly used in computers and electronic devices for volatile data storage and fast data access. This module has a capacity of 512Mb and uses an 8-bit-wide data bus. As a DDR4 memory, it offers improved performance and power efficiency compared to previous DDR iterations. The "083E:B" in its designation typically refers to specific characteristics such as speed grade or package type. DDR4 memory like this is crucial in applications requiring high-speed data processing, such as servers, desktops, and embedded systems. The MT40A512M8RH-083E:B offers features like higher data transfer rates, reduced power consumption, and increased memory bandwidth, making it suitable for demanding computational tasks. Its design follows JEDEC standards, ensuring compatibility and reliability across various platforms. Overall, this memory module is a critical component for enhancing system performance in modern electronic devices.

Equivalent

The MT40A512M8RH-083E:B is a DDR4 SDRAM chip from Micron. Equivalent products would include DDR4 SDRAM chips with similar specifications from other major manufacturers such as:
1. Samsung: K4A8G085WB-BCRC
2. SK Hynix: H5AN8G8NAFR-UHC
3. Kingston: D5128A08J80
These equivalents would share similar memory densities, speeds, and form factors. Please verify specific requirements such as voltage and timings for full compatibility.

Features

The MT40A512M8RH-083E:B is a DRAM component designed by Micron Technology. It is part of the DDR4 SDRAM family, featuring a high-speed data transfer rate and improved power efficiency compared to its predecessors. Key features include:
1. Density and Organization: It offers a density of 4 Gb with an 8-bit I/O organization.
2. Speed: Operates at rates up to DDR4-3200, ensuring high-performance data handling.
3. Voltage: Utilizes a standard supply voltage of 1.2V, contributing to lower power consumption.
4. Package: Comes in a compact FBGA (Fine-pitch Ball Grid Array) package that aids in efficient heat dissipation.
5. Reliability: Includes features like on-die termination (ODT) and per-bank refresh, which enhance signal integrity and reliability.
6. Temperature Range: Designed to operate effectively across a wide temperature range, suitable for various environments.
These features make it suitable for a wide range of applications, from consumer electronics to servers and data centers, where high speed and efficiency are critical.

Pinout

The MT40A512M8RH-083E:B is a DDR4 SDRAM chip manufactured by Micron Technology. It has a 78-ball FBGA (Fine-Pitch Ball Grid Array) package. The device offers a high-speed data transfer rate and is widely used in applications requiring large memory bandwidth.
The 78-ball configuration includes a variety of signal types such as:
- Data (DQ) pins
- Address and command pins
- Control signal pins (like CS#, RAS#, CAS#, WE#)
- Power and ground pins
- Clock and strobe signal pins
This specific DRAM chip is organized as 512M x 8, meaning it has a density of 512 Megabits and operates with an 8-bit wide data bus. It uses a 1.2V power supply for the core and I/O operations. The chip supports features like bank groups for improved performance, on-die termination (ODT), and programmable CAS latency. It is suitable for a wide range of applications in computing, networking, and consumer electronics where high-performance memory is required.

Manufacturer

The MT40A512M8RH-083E:B is a memory chip manufactured by Micron Technology, Inc. Micron is a leading American multinational corporation that specializes in the production of semiconductor devices, primarily dynamic random-access memory (DRAM), NAND flash memory, and other memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron is among the largest memory manufacturers globally.
The company serves a wide range of industries, including consumer electronics, mobile devices, data centers, automotive, and industrial markets. Micron is known for its innovation in memory technologies and its contribution to advancing memory capabilities that support a growing range of computing applications. It focuses on delivering high-performance memory solutions that are crucial for applications requiring fast and efficient data processing and storage.

Application

The MT40A512M8RH-083E:B is a DRAM chip, typically used in applications requiring high-density memory with fast access times. Its primary application areas include aerospace and defense systems, where reliability and performance are critical under extreme conditions. Additionally, it can be used in high-performance computing environments, such as data centers and scientific computing, where large volumes of data are processed rapidly. The chip is also suitable for use in automotive systems, telecommunications infrastructure, and industrial automation, where robust memory solutions are needed to support complex data processing tasks. Its radiation-hardened design makes it ideal for space applications, providing resilience against radiation effects in satellite and spacecraft systems.

Package

The MT40A512M8RH-083E:B is a DRAM memory component manufactured by Micron Technology. It is packaged in a FBGA (Fine-pitch Ball Grid Array) type, which is commonly used for high-density memory modules. The FBGA package provides good electrical performance and reliability while minimizing space, making it suitable for various electronic applications.

Frequently Asked Questions


Q: What is the memory density and organization of the MT40A512M8RH-083E:B?
A: It is a 4Gbit DDR4 SDRAM organized as 512M x 8 bits, ideal for high-density memory applications.


Q: What is the maximum operating frequency and data rate for this component?
A: It supports a clock frequency of 1.2 GHz, equivalent to DDR4-2400 data rate for high-speed data transfers.


Q: What is the voltage supply range for this DDR4 memory?
A: The operating voltage range is 1.14V to 1.26V, with a nominal VDD of 1.2V for low power consumption.


Q: Can this DRAM operate in high-temperature environments?
A: Yes, it has an extended operating temperature range of 0°C to 95°C (TC), suitable for thermally demanding systems.


Q: What is the package type and mounting style of the MT40A512M8RH-083E:B?
A: It comes in a 78-ball TFBGA package (9x10.5mm) for surface mount assembly, optimizing PCB space.


Q: Is this memory interface parallel or serial?
A: It uses a standard parallel memory interface, compliant with DDR4 SDRAM protocols for easy integration.


Q: What is the current lifecycle status of this product?
A: The part status is marked as "Obsolete," so it may be suitable for legacy designs or last-time buy opportunities.


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