MT46V32M16P-5B:J

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MT46V32M16P-5B:J

+БОМ

IC DRAM 512MBIT PARALLEL 66TSOP

  • ПроизводительКомпания Micron Technology Inc.

  • Мфр. Часть #MT46V32M16P-5B:J

  • В наличии7209

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Спецификации

Атрибут Ценность
Part Status Last Time Buy
Base Product Number MT46V32M16
Digi Key Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR
Memory Size 512Mbit
Memory Organization 32M x 16
Memory Interface Parallel
Clock Frequency 200 MHz
Write Cycle Time - Word, Page 15ns
Voltage - Supply 2.5V ~ 2.7V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount
Package / Case 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package 66-TSOP
Packaging Tray
Access Time 700 ps

Обзор

Description

The MT46V32M16P-5B:J is a DRAM component from Micron Technology. It is part of the MT46 series, which is DDR SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) designed for high-performance applications. This specific model features a configuration of 32 Meg x 16 bits, totaling 512 Megabits, and it operates at a data rate of 400 MT/s (million transfers per second). The "5B" denotes the speed grade, and the "J" typically refers to the package type or specific revision. The device operates with a 2.5V power supply, providing efficient power consumption for memory-intensive applications. It is commonly used in a variety of applications, including computing, networking, and consumer electronics, where fast data processing and efficient memory management are crucial. The DRAM integrates advanced features such as auto-refresh and self-refresh modes, enhancing its reliability and efficiency.

Equivalent

The MT46V32M16P-5B:J is a 512Mb DDR SDRAM chip from Micron. Equivalent products from other manufacturers include:
1. Hynix: HY5DU121622DTP
2. Samsung: K4H561638J-LCB3
3. Nanya: NT5DS32M16BS-5T
These are DDR SDRAMs with similar configurations and performance characteristics. Always verify the exact specifications and compatibility before replacing or substituting memory chips.

Features

The MT46V32M16P-5B:J is a DRAM memory module from Micron Technology, part of their DDR SDRAM product line. Here are some of its key features:
1. Memory Configuration: 512 Megabit density, organized as 32M x 16 bits.
2. Speed and Performance: Clock speed of 200 MHz with a data rate of DDR-400, meaning it can transfer data at 400 MT/s (million transfers per second).
3. Latency: CAS latency options include CL2.5, providing a balance between speed and reliability.
4. Voltage: Operates at a voltage of 2.5V, which is standard for DDR SDRAM.
5. Package: Available in a 66-pin TSOP (Thin Small Outline Package), which is compact and suitable for space-saving designs.
6. Temperature Range: Designed to function in standard commercial temperature ranges.
7. Applications: Commonly used in computing applications, including desktops, laptops, and servers, where moderate performance and capacity are needed.
8. JEDEC Standard Compliance: Ensures compatibility and reliability across different platforms and devices.
These features make the MT46V32M16P-5B:J a suitable choice for various memory applications requiring efficient data handling and moderate speed.

Pinout

The MT46V32M16P-5B:J is a DRAM chip from the DDR SDRAM family, specifically a 512Mb DDR SDRAM. It features a 66-pin TSOP (Thin Small-Outline Package) configuration. The primary functions of the pins include:
1. Power and Ground: Includes VDD and VSS pins for core power supply and ground, with VDDQ and VSSQ for the I/O buffer.
2. Address Pins (A0-A12): Used for addressing the memory locations.
3. Bank Address Pins (BA0-BA1): For selecting one of the four banks.
4. Data Pins (DQ0-DQ15): 16 data input/output pins for data transfer.
5. Clock and Control Pins:
- CLK: Clock input.
- CKE: Clock enable.
- CS#: Chip select.
- RAS#, CAS#, WE#: Row address strobe, column address strobe, and write enable.
6. Data Mask (DM0-DM1): For input data masking.
7. DQS: Data strobe for synchronizing data transfers.
These pins collectively facilitate various functions such as read/write operations, address multiplexing, and synchronization.

Manufacturer

The MT46V32M16P-5B:J is manufactured by Micron Technology, Inc. Micron is a leading global semiconductor company specializing in the production of memory and storage solutions. The company is known for its dynamic random-access memory (DRAM), NAND flash memory, and solid-state drives (SSDs), which are used in various computing, networking, and mobile products.
Micron serves a wide range of industries, including consumer electronics, data centers, automotive, and industrial applications. It focuses on developing advanced memory technologies to meet the growing demand for efficient and high-capacity data storage and processing solutions. The company is recognized for its innovation and research in memory technology, making it a key player in the semiconductor industry.

Application

The MT46V32M16P-5B:J is a 512Mb DDR SDRAM device typically used in applications requiring fast data access and high memory bandwidth. Key application areas include:
1. Computing Systems: Used in desktops, laptops, and servers for efficient data processing.
2. Networking Equipment: Utilized in routers and switches for high-speed data transmission.
3. Consumer Electronics: Found in gaming consoles, digital TVs, and set-top boxes for enhanced performance.
4. Embedded Systems: Employed in industrial automation and automotive electronics for real-time data handling.
5. Telecommunications: Used in equipment that requires rapid data transfer and processing capabilities.
Its reliability and speed make it suitable for diverse high-performance applications.

Package

The MT46V32M16P-5B:J is a DRAM component, typically available in a TSOP (Thin Small-Outline Package) or similar format. This packaging is designed to be compact and suitable for high-density, high-performance memory applications.

Frequently Asked Questions


Q: What is the memory density and organization of this DDR SDRAM?
A: It has a 512Mbit density organized as 32M x 16, providing a 16-bit wide data bus for parallel interface.


Q: What is the maximum clock frequency and data rate?
A: The maximum clock frequency is 200 MHz, supporting a DDR data rate of 400 Mbps per pin.


Q: What voltage supply range does this component require?
A: It requires a nominal 2.5V to 2.7V supply, typical for DDR SDRAM applications.


Q: What is the access time and write cycle time?
A: Access time is 700 ps (tAC), and write cycle time for word/page is 15ns.


Q: What package and mounting type are used?
A: It comes in a 66-TSSOP surface-mount package (10.16mm width), supplied as a 66-TSOP.


Q: Is this memory volatile or non-volatile?
A: It is volatile DRAM, requiring constant power and periodic refresh to retain data.


Q: What is the recommended operating temperature range?
A: The commercial temperature range is 0°C to 70°C (TA), suitable for most embedded systems.


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