MT47H64M16HR-3:H

Изображения являются только для ссылки

MT47H64M16HR-3:H

+БОМ

IC DRAM 1GBIT PARALLEL 84FBGA

  • ПроизводительКомпания Micron Technology Inc.

  • Мфр. Часть #MT47H64M16HR-3:H

  • В наличии2112

365 Дни гарантии качества

7*24 часы обслуживания каранти

90-гарантия послепродажного дня

Гарантия подлинного продукта

Спецификации

Атрибут Ценность
Part Status Obsolete
Base Product Number MT47H64M16
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR2
Memory Size 1Gbit
Memory Organization 64M x 16
Memory Interface Parallel
Clock Frequency 333 MHz
Write Cycle Time - Word, Page 15ns
Voltage - Supply 1.7V ~ 1.9V
Operating Temperature 0°C ~ 85°C (TC)
Mounting Type Surface Mount
Package 84-TFBGA
Supplier Device Package 84-FBGA (8x12.5)
Packaging Tray
Access Time 450 ps

Обзор

Description

The MT47H64M16HR-3:H is a 1Gb DDR2 SDRAM memory chip, commonly used in computing applications for efficient data storage and retrieval. It is organized as 64M x 16 bits and operates at a voltage range of 1.7V to 1.9V. The device is designed for high-speed performance, capable of a data transfer rate of up to 667 MT/s (megatransfers per second), corresponding to a clock speed of around 333 MHz.
Key features include fast data processing, low power consumption, and a range of power-saving modes such as precharge power-down and auto precharge. The chip supports various burst lengths, including 4 and 8, and is equipped with a self-refresh mode to retain data during periods of inactivity. Additionally, it has automatic temperature-compensated self-refresh (TCSR) to maintain optimal performance in varying thermal conditions.
The MT47H64M16HR-3:H is suitable for a wide range of applications, including personal computers, servers, and other electronic devices requiring efficient memory solutions.

Equivalent

The MT47H64M16HR-3:H is a 1Gb DDR2 SDRAM chip from Micron. Equivalent products include:
1. Hynix HY5PS1G1631C
2. Samsung K4T1G164QF
3. Nanya NT5TU64M16HG
4. Elpida EDE2108ACSE
These alternatives offer similar specifications and functionality, making them suitable replacements. Always verify compatibility with your specific application.

Features

The MT47H64M16HR-3:H is a DRAM chip from Micron Technology, categorized under the DDR2 SDRAM family. Here are some of its key features:
1. Density and Organization: It has a density of 1 Gb (gigabit) and is organized as 64M x 16.
2. Speed: The chip operates at a clock frequency of 333 MHz, which equates to a data rate of 667 MT/s (megatransfers per second).
3. Voltage: It requires an operating voltage of 1.8V, which is typical for DDR2 memory.
4. Package: The device is available in a 84-ball BGA (Ball Grid Array) package, which is a common packaging type for compact and efficient surface mounting.
5. Features:
- Low-Power: Designed for reduced power consumption while maintaining high-speed data transfer.
- Data Integrity: Features error correction support and other enhancements to maintain data integrity.
- Compatibility: Fully compliant with JEDEC standards for DDR2 memory.
These features make the MT47H64M16HR-3:H suitable for various applications, including computers, networking devices, and consumer electronics, where efficient data handling and reliability are essential.

Pinout

The MT47H64M16HR-3:H is a DRAM component from the DDR2 SDRAM family produced by Micron Technology. This particular chip typically comes in a 84-ball Fine Ball Grid Array (FBGA) package. It is organized as 64 Meg x 16 bits, meaning it has a storage capacity of 1 Gigabit (1Gb).
The primary function of this chip is to provide volatile memory storage for computing applications, where high-speed data access and temporary data storage are required. Its DDR2 technology allows for faster data transfer rates compared to previous generations, making it suitable for applications in personal computers, servers, and other electronic devices that require efficient memory solutions.
Each pin or ball in the FBGA package serves specific functions, including power supply (VDD, VDDQ), ground (VSS, VSSQ), data input/output (DQ pins), address inputs, control signals (such as RAS#, CAS#, WE#), clock inputs, and other necessary signals for the operation of the DDR2 SDRAM. The exact pin configuration and functions can be found in the component's datasheet provided by Micron.

Manufacturer

The manufacturer of the MT47H64M16HR-3:H is Micron Technology, Inc. Micron is a global leader in the semiconductor industry, specializing in the production of memory and storage solutions. The company designs and manufactures a wide range of memory products, including DRAM, NAND flash memory, and NOR flash memory, which are used in various applications such as computers, mobile devices, automotive systems, and data centers. Micron is known for its innovation in memory technology, contributing significantly to advancements in areas like artificial intelligence, cloud computing, and 5G technology. Founded in 1978 and headquartered in Boise, Idaho, Micron has a strong presence in the global tech industry and is considered one of the largest memory manufacturers in the world.

Application

The MT47H64M16HR-3:H is a DDR2 SDRAM memory chip used primarily in applications requiring efficient and high-speed data processing. Common application areas include:
1. Computing Systems: Enhancing the performance of desktops, laptops, and servers.
2. Networking Equipment: Supporting routers, switches, and other networking hardware that require fast data access.
3. Consumer Electronics: Used in devices such as gaming consoles and smart TVs where quick data retrieval is crucial.
4. Telecommunications: Improving data handling in base stations and other telecom devices.
5. Embedded Systems: Providing memory solutions for automotive and industrial control systems requiring robust and reliable performance.

Package

The MT47H64M16HR-3:H is a DRAM chip from Micron's DDR2 SDRAM series. It typically comes in a standard plastic package known as FBGA (Fine-Pitch Ball Grid Array), which enhances thermal performance and reliability.

Frequently Asked Questions


Q: What is the memory density and organization of the MT47H64M16HR-3:H?
A: It is a 1Gbit DDR2 SDRAM organized as 64M words x 16 bits per word, suitable for high-bandwidth applications.


Q: What is the maximum clock frequency supported by this DRAM?
A: It supports a clock frequency of 333 MHz, enabling data rates up to 667 Mbps per pin in DDR2 mode.


Q: Is this component compatible with standard DDR2 voltage levels?
A: Yes, it operates with a supply voltage range of 1.7V to 1.9V, compliant with JEDEC DDR2 standards.


Q: What is the access time and write cycle time for this device?
A: The access time is 450 ps, and the write cycle time for word/page operations is 15 ns, ensuring fast data throughput.


Q: What package does the MT47H64M16HR-3:H use for mounting?
A: It is housed in an 84-ball TFBGA package (84-FBGA, 8x12.5mm), designed for surface mount assembly.


Q: What is the operating temperature range for this DDR2 memory?
A: It operates within a temperature range of 0°C to 85°C (TC), suitable for commercial and industrial environments.


Q: Is this part currently active or obsolete for new designs?
A: Its part status is "Obsolete," indicating it is not recommended for new designs but may be used for legacy system repairs.


Q: What memory interface type does this component utilize?
A: It uses a parallel memory interface, typical for DDR2 SDRAM, enabling simultaneous data read/write operations.


Продукты, связанные с MT47H64M16HR-3:H

  • Быстрая цитата

  • Отправьте запрос на котировку MT47H64M16HR-3:H Используя эту форму, мы ответим в течение 12 часов.