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MT48LC32M8A2P-6A:G
+БОМIC DRAM 256MBIT PAR 54TSOP II
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ПроизводительКомпания Micron Technology Inc.
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Мфр. Часть #MT48LC32M8A2P-6A:G
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Лист данных MT48LC32M8A2P-6A:G DataSheet
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В наличии6610
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Part Status | Obsolete |
| Base Product Number | MT48LC32M8A2 |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM |
| Memory Size | 256Mbit |
| Memory Organization | 32M x 8 |
| Memory Interface | Parallel |
| Clock Frequency | 167 MHz |
| Write Cycle Time - Word, Page | 12ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package | 54-TSOP (0.400", 10.16mm Width) |
| Supplier Device Package | 54-TSOP II |
| Packaging | Bulk |
| Access Time | 5.4 ns |
Обзор
Description
This DRAM chip features a synchronous interface, allowing it to coordinate with system clock signals for improved data transfer rates. It supports burst modes and has a self-refresh capability, making it suitable for energy-efficient applications. The MT48LC32M8A2P-6A:G is commonly used in various electronic devices, including computers, servers, and networking equipment, due to its reliability and performance characteristics.
Due to its specifications and compatibility, it is often chosen for applications requiring substantial memory bandwidth and speed.
Equivalent
1. Hynix HY57V281620H
2. Samsung K4H511638G
3. Micron MT48LC32M8A2P-7A (slightly different speed grade)
4. Nanya NT5CB128M8DA
Always verify compatibility based on specific application requirements and datasheet specifications.
Features
1. Technology: It utilizes DDR SDRAM technology, allowing for higher data rates.
2. Speed: Operates at a clock frequency of 166 MHz (DDR333), facilitating fast data access.
3. Voltage: It operates at a supply voltage of 2.5V, which helps in power efficiency.
4. Package Type: Available in a 54-ball FBGA (Fine Ball Grid Array) package, optimizing space and thermal performance.
5. Latency: Offers a CAS latency of 2.5, enhancing responsiveness.
6. Refresh: Supports self-refresh and deep power-down modes, improving energy efficiency during idle cycles.
7. Compatibility: Suitable for use in various applications, including telecommunications, networking, and consumer electronics.
This DRAM chip is ideal for applications that require reliable performance and efficiency in memory storage solutions.
Pinout
The functions of its pins include:
- Data Input/Output (DQ0-DQ7): 8-bit data bus for reading and writing operations.
- Address Inputs (A0-A11): Used to select memory locations.
- Bank Select (BA0, BA1): Determines which memory bank is being accessed.
- Chip Select (CS): Activates the chip for operation.
- Row Address Strobe (RAS): Used to latch the row address.
- Column Address Strobe (CAS): Used to latch the column address.
- Write Enable (WE): Controls write operations.
- Clock Input (CLK): Synchronizes all operations.
- Power and Ground Pins (VDD, VSS): Supply power and ground connections.
This DRAM is typically used in applications requiring high-density memory solutions.
Manufacturer
Micron operates in the dynamic and competitive field of semiconductor manufacturing, providing products that support a variety of sectors such as consumer electronics, automotive, and data centers. The company is known for its commitment to innovation and research, investing heavily in new technologies to enhance performance and efficiency. Micron plays a crucial role in the ongoing development of next-generation memory solutions that meet the increasing demands for data processing and storage in today's digital world.
Application
1. Consumer Electronics: Smartphones, tablets, and digital cameras.
2. Computer Systems: Laptops and desktops for enhanced memory performance.
3. Network Devices: Routers and switches for improved data handling.
4. Gaming Consoles: Providing fast data access for graphics and game performance.
5. Automotive Applications: In-car entertainment and navigation systems.
6. Industrial Equipment: Memory for control systems and automation.
Its low power consumption makes it suitable for portable devices.
Package
Frequently Asked Questions
Q: What is the memory capacity and organization of this DRAM?
A: It has a 256Mbit density organized as 32M words x 8 bits per word, suitable for 8-bit data bus applications.
Q: What is the maximum clock frequency supported by this SDRAM?
A: It supports a maximum clock frequency of 167 MHz, enabling fast data transfer in synchronous operation.
Q: What is the voltage supply requirement for this component?
A: It requires a standard 3.3V supply, operating within the range of 3V to 3.6V.
Q: What is the access time and write cycle time?
A: The access time is 5.4 ns, and the write cycle time for word/page is 12 ns.
Q: What package type does this memory use?
A: It comes in a 54-pin TSOP II surface mount package, with a 0.400" body width (10.16mm).
Q: What is the operating temperature range for this device?
A: It operates from 0°C to 70°C (TA), making it suitable for commercial temperature environments.
Q: Is this memory volatile or non-volatile?
A: It is volatile SDRAM, meaning data is lost when power is removed.
Q: Can this component be used in new designs?
A: No, its Part Status is "Obsolete," so it is not recommended for new designs; use current alternatives.
