MT48LC4M32B2TG-7:G

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MT48LC4M32B2TG-7:G

+БОМ

IC DRAM 128MBIT PAR 86TSOP II

  • ПроизводительКомпания Micron Technology Inc.

  • Мфр. Часть #MT48LC4M32B2TG-7:G

  • В наличии9186

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Спецификации

Атрибут Ценность
Part Status Obsolete
Base Product Number MT48LC4M32B2
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM
Memory Size 128Mbit
Memory Organization 4M x 32
Memory Interface Parallel
Clock Frequency 143 MHz
Write Cycle Time - Word, Page 14ns
Voltage - Supply 3V ~ 3.6V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount
Package 86-TFSOP (0.400", 10.16mm Width)
Supplier Device Package 86-TSOP II
Packaging Tray
Access Time 5.5 ns

Обзор

Description

The MT48LC4M32B2TG-7:G is a DDR3 SDRAM (Synchronous Dynamic Random Access Memory) component manufactured by Micron Technology. It features a 4 Meg x 32 configuration, providing a total of 128 Megabytes of memory. This chip operates at a data rate of 1066 MT/s (mega-transfers per second) and is designed to work with a 1.5V power supply. The “-7” in the part number indicates a maximum access time of 7 nanoseconds, ensuring efficient performance for various applications. The “G” suffix denotes that the chip is RoHS compliant, meaning it is free from certain hazardous substances. This DRAM is suitable for a range of applications including consumer electronics, computing, and embedded systems, where reliable and high-speed memory is required. The device adheres to industry-standard specifications, making it compatible with various motherboards and systems. Overall, the MT48LC4M32B2TG-7:G is a versatile memory solution for modern electronic designs.

Equivalent

The MT48LC4M32B2TG-7:G chip is a 4Gb DDR3 SDRAM. Equivalent products include:
1. Hynix H5TQ4G83EFR-PBA
2. Samsung K4B4G0832F-BCH9
3. Micron MT41K256M16HA-125
4. Nanya NT5CB256M16DP-DI
Always verify compatibility based on specifications like voltage, speed, and package type before substituting.

Features

The MT48LC4M32B2TG-7 is a 1Gb DDR3 SDRAM memory chip developed by Micron Technology. Key features include:
1. Capacity: 1 Gigabit (Gb) storage, organized as 4 banks of 32 bits each.
2. Data Rate: Operates at a speed of 1600 MT/s (million transfers per second).
3. Voltage: Low operating voltage of 1.5V, with a maximum of 1.575V.
4. Package: Available in a 78-ball TFBGA package, facilitating compact design in various applications.
5. Temperature Range: Industrial temperature range (-40°C to +95°C).
6. Latency: Supports CAS latency options of 7, 8, and 9.
7. Compatibility: Designed to be compatible with DDR3 standards, making it suitable for use in laptops, desktops, and other computing devices.
8. Features: Includes features like self-refresh, power-saving modes, and burst modes for improved performance and energy efficiency.
This makes it a reliable choice for high-performance memory applications.

Pinout

The MT48LC4M32B2TG-7:G is a DDR SDRAM memory chip with a pin count of 84 pins. It is organized as 4 Meg x 32 bits, providing a total capacity of 128 megabits. The key functions of each pin include power supply, ground, data, address, control signals, and various functions related to clocking and timing.
Key pins include:
- DQ0-DQ31: Data input/output pins for data transfer.
- A0-A11: Address pins for row and column selection.
- BA0-BA1: Bank address pins for selecting the memory bank.
- CLK: Clock input for synchronizing operations.
- CS: Chip select for enabling the chip.
- WE: Write enable for data writing operations.
- CAS: Column address strobe for read operations.
- RAS: Row address strobe for activating the row.
This chip is designed for various applications requiring high-speed memory access.

Manufacturer

The manufacturer of the MT48LC4M32B2TG-7:G is Micron Technology, Inc. Micron is a prominent American company that specializes in memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron is known for producing a wide range of semiconductor products, including DRAM, NAND flash memory, and storage solutions for various applications such as computing, mobile devices, automotive, and enterprise storage.
Micron operates in the semiconductor industry, focusing on innovation in memory technology to meet the growing demands of data-intensive applications. The company is recognized for its commitment to research and development, enabling advancements in memory technology that enhance performance, efficiency, and reliability. Micron is one of the largest manufacturers of DRAM and NAND memory globally, serving diverse markets and contributing significantly to the evolution of digital technologies.

Application

The MT48LC4M32B2TG-7:G is a DDR3 SDRAM memory chip primarily used in applications such as personal computers, laptops, and servers for main memory. It is also suitable for networking equipment, telecommunications devices, and embedded systems due to its high-speed data transfer capabilities and low power consumption. Additionally, it finds use in gaming consoles and industrial applications where reliable memory performance is crucial. Its compatibility with various memory controllers makes it a versatile choice for many electronic devices requiring efficient data storage and retrieval.

Package

The MT48LC4M32B2TG-7:G is packaged in a 54-ball FBGA (Fine Ball Grid Array) format. This type of packaging is commonly used for memory chips, providing a compact footprint and efficient thermal and electrical performance.

Frequently Asked Questions


Q: What is the memory density and organization of the MT48LC4M32B2TG-7:G?
A: It is a 128Mbit SDRAM, organized as 4M x 32 bits, ideal for 32-bit bus applications.


Q: What is the maximum clock frequency supported by this DRAM?
A: It supports a maximum clock frequency of 143 MHz, enabling high-speed synchronous operation.


Q: What is the typical access time for this SDRAM?
A: The access time is 5.5 ns, ensuring fast data retrieval for time-sensitive tasks.


Q: What voltage supply does the MT48LC4M32B2 require?
A: It operates with a supply voltage range of 3V to 3.6V, compatible with standard 3.3V logic.


Q: What is the write cycle time for this device?
A: The write cycle time for word and page operations is 14ns, supporting efficient data writing.


Q: Is this component suitable for surface-mount assembly?
A: Yes, it comes in a surface-mount 86-TSOP II package, facilitating automated PCB assembly.


Q: What is the operating temperature range of this memory?
A: It operates from 0°C to 70°C (TA), making it suitable for commercial-grade environments.


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