Изображения являются только для ссылки
NCE60P25K
+БОМ-
ПроизводительWuxi NCE Power Semiconductor
-
Мфр. Часть #NCE60P25K
-
Лист данных NCE60P25K DataSheet
-
В наличии8068
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | TO-252-2(DPAK) |
| OperatingTemperature | -55℃~+150℃ |
| Current-ContinuousDrain(Id) | 25A |
| Pd-PowerDissipation | 90W |
| DraintoSourceVoltage | 60V |
| RDS(on) | 45mΩ@10V,20A |
| GateThresholdVoltage(Vgs(th)@Id) | 3.5V |
| Type | 1 piece P-channel |
| GateCharge(Qg) | 46nC@30V |
| InputCapacitance(Ciss@Vds) | 3.43nF@30V |
| ReverseTransferCapacitance(Crss@Vds) | 272pF@30V |
Обзор
Description
Key attributes of the NCE60P25K include low on-resistance, which contributes to reduced power loss and improved efficiency in power conversion systems. It also features fast switching capabilities, enabling it to operate effectively in high-frequency applications. The device is typically encapsulated in a TO-220 package, providing good thermal performance and ease of mounting on heat sinks.
Common applications for the NCE60P25K include power management in DC-DC converters, motor control circuits, and other applications requiring efficient power handling. Its robust performance and reliability make it a popular choice for designers looking to optimize power efficiency in electronic systems.
Equivalent
Features
1. P-Channel: This MOSFET type allows current to flow when a negative voltage is applied, making it suitable for high-side switching applications.
2. Voltage and Current Ratings: It features a drain-source voltage (V_DS) of -250V and a continuous drain current (I_D) of -60A, suitable for high-power applications.
3. Low On-Resistance: The MOSFET has a low on-resistance, which minimizes power loss and improves efficiency during operation.
4. High-Speed Switching: It is designed for fast switching speeds, which enhances performance in high-frequency applications.
5. Thermal Performance: The device offers good thermal performance and reliability, featuring a robust design for high-temperature operations.
6. Package Type: Commonly available in TO-220 or TO-247 packages, providing ease of use in circuit designs.
These features make the NCE60P25K suitable for applications like DC-DC converters, motor drives, and power management in various electronic devices.
Pinout
1. Gate (G): This pin is used to control the MOSFET's operation. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): The drain is the terminal where the current flows out of the MOSFET when it is in the 'on' state.
3. Source (S): The source is the terminal where the current enters the MOSFET.
The NCE60P25K is designed for applications requiring high current and voltage handling in power management and switching. It typically has a maximum drain-source voltage (V_DS) of -250V and a continuous drain current (I_D) rating suitable for various power applications. Always refer to the specific datasheet for precise electrical characteristics and ratings.