Спецификации
| Атрибут | Ценность |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 1.7A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 2.7V, 4.5V |
| Rds On(Max) @ Id Vgs | 110mOhm @ 1.7A, 4.5V |
| Vgs(th)(Max) @ Id | 1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 9 nC @ 4.5 V |
| Vgs(Max) | 8V |
| Input Capacitance(Ciss)(Max) @ Vds | 240 pF @ 10 V |
| Power Dissipation (Max) | 500mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 |
Обзор
Description
The NDS335N is an N-channel enhancement-mode MOSFET designed for low-voltage, high-speed switching applications. Key features include:
- Low On-Resistance (RDS(on)): Typically 50 mΩ at VGS = 4.5V, ensuring efficient power handling.
- Fast Switching: Optimized for high-speed operations in circuits like DC-DC converters or load switches.
- Low Threshold Voltage (VGS(th)): ~1V, making it suitable for low-drive-voltage systems (e.g., 3.3V or 5V logic).
- Compact Package: Available in SOT-23, ideal for space-constrained designs.
Common uses include power management in portable electronics, motor control, and battery-powered devices. Always refer to the datasheet for detailed specifications.
- Low On-Resistance (RDS(on)): Typically 50 mΩ at VGS = 4.5V, ensuring efficient power handling.
- Fast Switching: Optimized for high-speed operations in circuits like DC-DC converters or load switches.
- Low Threshold Voltage (VGS(th)): ~1V, making it suitable for low-drive-voltage systems (e.g., 3.3V or 5V logic).
- Compact Package: Available in SOT-23, ideal for space-constrained designs.
Common uses include power management in portable electronics, motor control, and battery-powered devices. Always refer to the datasheet for detailed specifications.
Equivalent
Equivalent products to the NDS335N (N-channel MOSFET, 20V, 6.3A) include:
- AO3400 (30V, 5.7A)
- SI2302 (20V, 4.1A)
- DMN2004 (20V, 4.2A)
- 2N7002 (60V, 0.3A, lower current)
Check datasheets for exact compatibility in your circuit.
- AO3400 (30V, 5.7A)
- SI2302 (20V, 4.1A)
- DMN2004 (20V, 4.2A)
- 2N7002 (60V, 0.3A, lower current)
Check datasheets for exact compatibility in your circuit.
Features
The NDS335N is an N-channel MOSFET with the following key features:
- Voltage Rating: 30V (Drain-to-Source, VDS)
- Current Handling: 5.7A (Continuous Drain Current, ID)
- Low On-Resistance: 50mΩ (RDS(on)) at VGS = 10V
- Gate Threshold Voltage: 1-2.5V (VGS(th))
- Fast Switching: Low gate charge (Qg) for efficient performance
- Package: SOT-23 (Compact surface-mount)
- Applications: Power management, load switching, DC-DC converters, and battery protection.
Ideal for low-voltage, high-efficiency circuits.
- Voltage Rating: 30V (Drain-to-Source, VDS)
- Current Handling: 5.7A (Continuous Drain Current, ID)
- Low On-Resistance: 50mΩ (RDS(on)) at VGS = 10V
- Gate Threshold Voltage: 1-2.5V (VGS(th))
- Fast Switching: Low gate charge (Qg) for efficient performance
- Package: SOT-23 (Compact surface-mount)
- Applications: Power management, load switching, DC-DC converters, and battery protection.
Ideal for low-voltage, high-efficiency circuits.
Application
The NDS335N is an N-channel MOSFET commonly used in:
1. Power Management – Switching regulators, DC-DC converters.
2. Load Switching – Controlling power to peripherals in portable devices.
3. Motor Control – Driving small motors in consumer electronics.
4. LED Drivers – Efficiently powering LED arrays.
5. Battery Protection – Preventing overcurrent/overvoltage in battery circuits.
With a low on-resistance (RDS(on)) and compact SOT-23 package, it’s ideal for space-constrained, low-voltage (<30V) applications.
1. Power Management – Switching regulators, DC-DC converters.
2. Load Switching – Controlling power to peripherals in portable devices.
3. Motor Control – Driving small motors in consumer electronics.
4. LED Drivers – Efficiently powering LED arrays.
5. Battery Protection – Preventing overcurrent/overvoltage in battery circuits.
With a low on-resistance (RDS(on)) and compact SOT-23 package, it’s ideal for space-constrained, low-voltage (<30V) applications.
Package
The NDS335N is a N-channel MOSFET available in a SOT-23 surface-mount package. This compact 3-pin package is widely used for low-power applications due to its small size and ease of assembly on PCBs. Key features include a small footprint (2.9mm x 1.3mm) and suitability for automated placement.
