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NDT3055
+БОМPOWER FIELD-EFFECT TRANSISTOR, 4
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ПроизводительКомпания Fairchild Semiconductor
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Мфр. Часть #NDT3055
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Лист данных NDT3055 DataSheet
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В наличии5449
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Спецификации
| Атрибут | Ценность |
| Package / Case | Bulk |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 4A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 100mOhm @ 4A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 15 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 250 pF @ 30 V |
| Power Dissipation (Max) | 1.1W (Ta) |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-223-4 |
Обзор
Equivalent
- IRF9Z34N (P-channel, -55V, -19A)
- FQP27P06 (P-channel, -60V, -27A)
- IRLML6401 (P-channel, -12V, -4.3A, SMD)
- SI2301 (P-channel, -20V, -2.3A, SMD)
Check datasheets for exact specs before substitution.
Pinout
1. Gate (G): Controls the switching operation (typically driven by 2–4V for full activation).
2. Drain (D): Connects to the load (handles up to 60V and 12A continuous current).
3. Source (S): Ground reference, connected to the circuit common.
Key Functions:
- Low On-Resistance (RDS(on)): ~50mΩ (max) at 10V VGS, reducing power loss.
- Fast Switching: Suitable for power management (e.g., DC-DC converters, motor control).
Applications:
- Power switching in automotive, industrial, and consumer electronics.
Manufacturer
onsemi is a global semiconductor company specializing in energy-efficient technologies, including power management, analog, and sensor solutions. It serves industries like automotive, industrial, and consumer electronics. Known for reliability and innovation, onsemi provides components for applications such as power supplies, motor control, and IoT devices.
The NDT3055 is part of their portfolio of discrete power transistors.
