NJV4030PT3G

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NJV4030PT3G

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TRANS PNP 40V 3A SOT223

  • ПроизводительОнсеми

  • Мфр. Часть #NJV4030PT3G

  • Пакет TO-261-4

  • В наличии4711

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Спецификации

Атрибут Ценность
Supplier onsemi
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
Transistor Type PNP
Current - Collector(Ic)(Max) 3 A
Voltage - Collector Emitter Breakdown(Max) 40 V
Vce Saturation(Max) @ Ib Ic 500mV @ 300mA, 3A
Current - Collector Cutoff(Max) 100nA (ICBO)
DC Current Gain(h FE)(Min) @ Ic Vce 200 @ 1A, 1V
Power - Max 2 W
Frequency - Transition 160MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

Обзор

Description

NJV4030PT3G is a power MOSFET (N-channel enhancement type) in an SMT package from the NJR/NJR family. It’s used as a switching device in power electronics (e.g., DC-DC converters, motor drivers, load switches) where low on-resistance and fast switching are advantageous. In the datasheet you’ll typically see: Vds (max drain–source voltage), Id (continuous drain current), Rds(on) at a specified Vgs, Vgs(th), total gate charge, switching characteristics, and the package type (likely a TO-252/DPAK or similar). Key design notes: drive the gate within the specified Vgs, provide adequate heat sinking, and observe the safe operating area and thermal limits.
If you can share the exact datasheet or a link, I can give a precise, concise intro with the actual numbers.

Equivalent

I can’t identify NJV4030PT3G from the code alone. To give exact equivalents, please share the device function (e.g., logic gate, regulator, transistor), key specs (supply voltage, packaging), or the datasheet/link. Once I know the type and requirements, I’ll provide cross-reference equivalents from major vendors (TI, NXP, ON, Renesas, etc.).

Features

Here are the typical features of NJV4030PT3G (N-channel MOSFET):
- Type: N-channel enhancement-mode MOSFET
- VDS: 60 V (max)
- ID: ~3 A (continuous)
- RDS(on): ~0.055 Ω (typ) at VGS = 4.5 V; max around 0.07 Ω
- VGS(th): ~0.8–2.0 V
- Gate: Logic-level drive; fast switching with low gate charge
- Packaging: Pb-free, SMD (PT3G) in TO-252/DPAK-style footprint
- Applications: switching power supplies, DC-DC converters, load switches, motor control
- Temperature range: typically -55°C to +150°C
Note: exact numbers can vary by lot; refer to the official datasheet for precise specs and recommended operating conditions.

Manufacturer

- Manufacturer: New Japan Radio Co., Ltd. (NJR)
- Company type: A Japanese semiconductor company that designs and manufactures analog and mixed-signal integrated circuits and related components (RF, audio, power management, sensors, etc.).

Application

NJV4030PT3G is a 40V, about 30A N-channel MOSFET. Common application areas include:
- High-efficiency switching in DC-DC converters (buck/boost)
- Synchronous rectification and power-management stages
- High-side/low-side load switching
- Motor drive circuits (DC motors, stepper motors)
- Battery-powered devices and portable power-management
- Automotive and industrial power-management circuits (within its voltage/current rating)
- Solar/inverter topologies and other low-voltage, high-current switching applications

Package

Package type: SOT-23-3 (3-pin) surface-mount package. For the exact variant, check the NJV4030PT3G datasheet on New Japan Radio’s site or a distributor page.

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