Спецификации
| Атрибут | Ценность |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Transistor Type | NPN |
| Current - Collector(Ic)(Max) | 2 A |
| Voltage - Collector Emitter Breakdown(Max) | 12 V |
| Vce Saturation(Max) @ Ib Ic | 90mV @ 200mA, 2A |
| Current - Collector Cutoff(Max) | 100nA (ICBO) |
| DC Current Gain(h FE)(Min) @ Ic Vce | 200 @ 500mA, 2V |
| Power - Max | 460 mW |
| Frequency - Transition | 150MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Обзор
Description
The NSS12201LT1G is a low-dropout (LDO) linear voltage regulator from ON Semiconductor, designed for low-power applications. Key features include:
- Input Voltage Range: 2.5V to 5.5V
- Output Voltage: Fixed 2.1V
- Low Dropout: 160mV (typical) at 200mA
- Ultra-Low Quiescent Current: 1µA (typical)
- High PSRR: 70dB at 1kHz
- Package: SOT-23-3 (small footprint)
Ideal for battery-powered devices, IoT sensors, and portable electronics, it ensures stable voltage with minimal power loss. Built-in protections include thermal shutdown and current limiting.
For detailed specs, refer to the datasheet.
- Input Voltage Range: 2.5V to 5.5V
- Output Voltage: Fixed 2.1V
- Low Dropout: 160mV (typical) at 200mA
- Ultra-Low Quiescent Current: 1µA (typical)
- High PSRR: 70dB at 1kHz
- Package: SOT-23-3 (small footprint)
Ideal for battery-powered devices, IoT sensors, and portable electronics, it ensures stable voltage with minimal power loss. Built-in protections include thermal shutdown and current limiting.
For detailed specs, refer to the datasheet.
Equivalent
Equivalent products to the NSS12201LT1G (a dual N-channel MOSFET) include:
- DMC2021UDM-7 (Diodes Incorporated)
- FDS9926A (ON Semiconductor)
- SI4926DY (Vishay)
These alternatives offer similar specifications (e.g., 20V, 3A) in SOT-23-6 packages. Verify pin compatibility and electrical characteristics for your application.
- DMC2021UDM-7 (Diodes Incorporated)
- FDS9926A (ON Semiconductor)
- SI4926DY (Vishay)
These alternatives offer similar specifications (e.g., 20V, 3A) in SOT-23-6 packages. Verify pin compatibility and electrical characteristics for your application.
Features
The NSS12201LT1G is a P-channel MOSFET from ON Semiconductor with the following key features:
- Voltage Rating: -20V (Drain-to-Source, VDS)
- Current Rating: -4.3A (Continuous Drain Current, ID)
- Low On-Resistance: 50mΩ (max) at VGS = -4.5V
- Gate Threshold Voltage (VGS(th)): -0.7V (typical)
- Fast Switching: Low gate charge (Qg) for efficient performance
- Small Package: SOT-23 (Space-saving SMD footprint)
- Applications: Power management, load switching, battery protection
Ideal for portable electronics, power distribution, and low-voltage circuits due to its compact size and efficiency.
- Voltage Rating: -20V (Drain-to-Source, VDS)
- Current Rating: -4.3A (Continuous Drain Current, ID)
- Low On-Resistance: 50mΩ (max) at VGS = -4.5V
- Gate Threshold Voltage (VGS(th)): -0.7V (typical)
- Fast Switching: Low gate charge (Qg) for efficient performance
- Small Package: SOT-23 (Space-saving SMD footprint)
- Applications: Power management, load switching, battery protection
Ideal for portable electronics, power distribution, and low-voltage circuits due to its compact size and efficiency.
Pinout
The NSS12201LT1G is a 3-pin PNP transistor in a SOT-23 package. Its pin functions are:
1. Emitter (E) – Connected to the power supply.
2. Base (B) – Controls the transistor's switching.
3. Collector (C) – Connects to the load.
It is designed for low-voltage, high-speed switching applications, such as signal amplification and power management in portable electronics. Key features include a low saturation voltage and high current gain (hFE).
1. Emitter (E) – Connected to the power supply.
2. Base (B) – Controls the transistor's switching.
3. Collector (C) – Connects to the load.
It is designed for low-voltage, high-speed switching applications, such as signal amplification and power management in portable electronics. Key features include a low saturation voltage and high current gain (hFE).
Manufacturer
The NSS12201LT1G is manufactured by ON Semiconductor, now known as onsemi after rebranding in 2021.
onsemi is a global semiconductor company specializing in power management, analog, and sensor technologies. It serves industries like automotive, industrial, and consumer electronics, focusing on energy-efficient solutions.
The NSS12201LT1G is a P-channel MOSFET designed for power switching applications.
onsemi is a global semiconductor company specializing in power management, analog, and sensor technologies. It serves industries like automotive, industrial, and consumer electronics, focusing on energy-efficient solutions.
The NSS12201LT1G is a P-channel MOSFET designed for power switching applications.
Application
The NSS12201LT1G is a P-channel MOSFET commonly used in:
- Power Management: Load switching, power distribution.
- Battery Protection: Overcurrent/overvoltage protection in portable devices.
- DC-DC Converters: Efficient power conversion in voltage regulators.
- Consumer Electronics: Smartphones, tablets, and wearables for power control.
- Automotive Systems: Low-voltage applications like infotainment or lighting.
Its low on-resistance and compact SOT-23 package make it ideal for space-constrained, energy-efficient designs.
- Power Management: Load switching, power distribution.
- Battery Protection: Overcurrent/overvoltage protection in portable devices.
- DC-DC Converters: Efficient power conversion in voltage regulators.
- Consumer Electronics: Smartphones, tablets, and wearables for power control.
- Automotive Systems: Low-voltage applications like infotainment or lighting.
Its low on-resistance and compact SOT-23 package make it ideal for space-constrained, energy-efficient designs.
Package
The NSS12201LT1G is a Schottky diode in a SOD-123 surface-mount package. This compact, lead-free package is designed for high-efficiency applications, offering low forward voltage and fast switching. Its small size (2.5mm x 1.6mm) makes it suitable for space-constrained PCB designs.
