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NTD24N06LT4G
+БОМPOWER FIELD-EFFECT TRANSISTOR, 2
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ПроизводительКомпания Fairchild Semiconductor
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Мфр. Часть #NTD24N06LT4G
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Лист данных NTD24N06LT4G DataSheet
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В наличии22122
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Спецификации
| Атрибут | Ценность |
| Supplier | Rochester Electronics, LLC |
| Package / Case | Bulk |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 24A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 5V |
| Rds On(Max) @ Id Vgs | 45mOhm @ 10A, 5V |
| Vgs(th)(Max) @ Id | 2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 32 nC @ 5 V |
| Vgs(Max) | ±15V |
| Input Capacitance(Ciss)(Max) @ Vds | 1140 pF @ 25 V |
| Power Dissipation (Max) | 1.36W (Ta), 62.5W (Tj) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DPAK |
Обзор
Description
The NTD24N06LT4G is a metal-oxide-semiconductor field-effect transistor (MOSFET) produced by ON Semiconductor. It is designed for use in low-voltage applications, particularly in switching and amplifying electronic signals. This N-channel MOSFET is known for its efficiency and reliability in these roles.
Key features include a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of up to 24A. The device is housed in a TO-252 package, which provides a compact footprint suitable for various circuit board designs. The MOSFET has a low on-resistance, enhancing its conductivity and power efficiency, which is crucial for minimizing power loss and heat generation.
Its fast switching capabilities make it ideal for applications in DC-DC converters, motor drives, and power management systems. The NTD24N06LT4G is also designed to withstand high energy pulses in the avalanche and commutation mode, adding to its robustness in demanding environments. Overall, it is a versatile MOSFET component suitable for a wide range of electronic applications.
Key features include a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of up to 24A. The device is housed in a TO-252 package, which provides a compact footprint suitable for various circuit board designs. The MOSFET has a low on-resistance, enhancing its conductivity and power efficiency, which is crucial for minimizing power loss and heat generation.
Its fast switching capabilities make it ideal for applications in DC-DC converters, motor drives, and power management systems. The NTD24N06LT4G is also designed to withstand high energy pulses in the avalanche and commutation mode, adding to its robustness in demanding environments. Overall, it is a versatile MOSFET component suitable for a wide range of electronic applications.
Equivalent
The NTD24N06LT4G is an N-channel MOSFET. Equivalent products include:
1. IRFZ44N by Infineon
2. IRLZ44N by Infineon
3. STP55NF06 by STMicroelectronics
4. FQP27P06 by ON Semiconductor
5. FQP30N06L by ON Semiconductor
These alternatives should be checked for compatibility in terms of V_DS, I_D, R_DS(on), and package type to ensure they meet your specific application requirements.
1. IRFZ44N by Infineon
2. IRLZ44N by Infineon
3. STP55NF06 by STMicroelectronics
4. FQP27P06 by ON Semiconductor
5. FQP30N06L by ON Semiconductor
These alternatives should be checked for compatibility in terms of V_DS, I_D, R_DS(on), and package type to ensure they meet your specific application requirements.
Features
The NTD24N06LT4G is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used for switching applications. Here are its key features:
1. Voltage and Current Ratings: It has a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of up to 24A, making it suitable for medium power applications.
2. Low On-Resistance: The MOSFET features a low R_DS(on), which ensures minimal power loss and efficient operation, typically around 0.05 ohms.
3. Fast Switching Speed: It can switch on and off rapidly, thus enhancing performance in fast-switching applications.
4. Package: It is available in a TO-252 package, which is suitable for surface mounting and offers good thermal performance.
5. Enhancement Mode: The device operates in enhancement mode, meaning it is normally off when the gate-source voltage (V_GS) is 0V.
6. Applications: Commonly used in power management, motor control, and DC-DC converters.
These features make the NTD24N06LT4G a versatile choice for various electronic circuits requiring efficient switching.
1. Voltage and Current Ratings: It has a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of up to 24A, making it suitable for medium power applications.
2. Low On-Resistance: The MOSFET features a low R_DS(on), which ensures minimal power loss and efficient operation, typically around 0.05 ohms.
3. Fast Switching Speed: It can switch on and off rapidly, thus enhancing performance in fast-switching applications.
4. Package: It is available in a TO-252 package, which is suitable for surface mounting and offers good thermal performance.
5. Enhancement Mode: The device operates in enhancement mode, meaning it is normally off when the gate-source voltage (V_GS) is 0V.
6. Applications: Commonly used in power management, motor control, and DC-DC converters.
These features make the NTD24N06LT4G a versatile choice for various electronic circuits requiring efficient switching.
Pinout
The NTD24N06LT4G is an N-channel MOSFET. It typically comes in a DPAK (TO-252) package, which usually features three pins and a mounting tab. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here determines if the MOSFET is in an on (conducting) or off (non-conducting) state.
2. Drain (D): This is the pin through which the main current flows when the MOSFET is in the conducting state. The drain is where the load is connected.
3. Source (S): This pin serves as the return path for the current flowing through the drain when the MOSFET is conducting.
The mounting tab is usually connected to the Drain (D) and serves both as an electrical connection and a heat sink pathway. The primary function of the NTD24N06LT4G is to switch or amplify electronic signals in various applications such as power management, motor control, and switching regulators.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here determines if the MOSFET is in an on (conducting) or off (non-conducting) state.
2. Drain (D): This is the pin through which the main current flows when the MOSFET is in the conducting state. The drain is where the load is connected.
3. Source (S): This pin serves as the return path for the current flowing through the drain when the MOSFET is conducting.
The mounting tab is usually connected to the Drain (D) and serves both as an electrical connection and a heat sink pathway. The primary function of the NTD24N06LT4G is to switch or amplify electronic signals in various applications such as power management, motor control, and switching regulators.
Manufacturer
The NTD24N06LT4G is manufactured by ON Semiconductor. ON Semiconductor is a leading semiconductor supplier that focuses on efficient power and signal management solutions. The company produces a wide range of semiconductor components, including power and signal management solutions, logic, discrete, and custom devices for a variety of applications in automotive, industrial, cloud power, and Internet of Things (IoT) sectors. ON Semiconductor provides innovative solutions that help engineers solve electronic design challenges, reduce energy usage, and develop advanced electronics systems.
Application
The NTD24N06LT4G is a N-channel MOSFET commonly used in various applications due to its efficient power handling and switching capabilities. Key application areas include:
1. Power Supply Circuits: Used in DC-DC converters and voltage regulation.
2. Motor Control: Suitable for driving motors in automotive and industrial applications.
3. Switching Applications: Utilized in high-speed switching and load switch applications.
4. Lighting Systems: Employed in LED drivers and other lighting controls.
5. Battery Management: Plays a role in battery protection circuits and charge control.
Its versatility in handling high current and voltage makes it ideal for these applications.
1. Power Supply Circuits: Used in DC-DC converters and voltage regulation.
2. Motor Control: Suitable for driving motors in automotive and industrial applications.
3. Switching Applications: Utilized in high-speed switching and load switch applications.
4. Lighting Systems: Employed in LED drivers and other lighting controls.
5. Battery Management: Plays a role in battery protection circuits and charge control.
Its versatility in handling high current and voltage makes it ideal for these applications.
Package
The NTD24N06LT4G is a MOSFET transistor, and it comes in a DPAK package type. DPAK, or TO-252, is a surface-mount package typically used for power semiconductors, providing a compact and efficient thermal and electrical performance.
