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NTD24N06T4G
+БОМMOSFET N-CH 60V 24A DPAK
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ПроизводительОнсеми
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Мфр. Часть #NTD24N06T4G
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Лист данных NTD24N06T4G DataSheet
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В наличии5502
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90-гарантия послепродажного дня
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Спецификации
| Атрибут | Ценность |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 24A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
| Power Dissipation (Max) | 1.36W (Ta), 62.5W (Tj) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DPAK |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Base Product Number | NTD24 |
Обзор
Description
The NTD24N06T4G is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power switching applications. It features a maximum drain-source voltage (VDS) of 60V and a continuous drain current (ID) rating of 24A, making it suitable for medium to high power applications. The MOSFET is known for its low on-resistance (RDS(on)), which enhances efficiency by minimizing power losses during operation.
Typically housed in a TO-220 package, the NTD24N06T4G is utilized in various applications, including power management, motor control, and automotive electronics. Its gate threshold voltage allows for easy interfacing with low-voltage control signals.
The device's fast switching speeds and thermal performance make it ideal for efficient energy conversion in circuits like DC-DC converters and inverters. Overall, the NTD24N06T4G is a versatile component for engineers seeking reliable and efficient solutions in their electronic designs.
Typically housed in a TO-220 package, the NTD24N06T4G is utilized in various applications, including power management, motor control, and automotive electronics. Its gate threshold voltage allows for easy interfacing with low-voltage control signals.
The device's fast switching speeds and thermal performance make it ideal for efficient energy conversion in circuits like DC-DC converters and inverters. Overall, the NTD24N06T4G is a versatile component for engineers seeking reliable and efficient solutions in their electronic designs.
Equivalent
The NTD24N06T4G is an N-channel MOSFET with a 60V rating and 24A continuous current. Equivalent products include the IRF520, STP24NM60, and BSS123. However, always check specifications like Rds(on), gate threshold voltage, and package type to ensure compatibility for your specific application.
Features
The NTD24N06T4G is an N-channel MOSFET designed for various switching applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 60V, making it suitable for low to medium voltage applications.
2. Current Rating: Continuous drain current (I_D) of 24A, allowing for efficient handling of significant loads.
3. R_DS(on): A low on-resistance of approximately 0.035 ohms at V_GS = 10V, minimizing power loss during operation.
4. Gate Threshold Voltage: V_GS(th) typically ranges from 2V to 4V, enabling easy drive with standard logic levels.
5. Package: Available in a TO-220 package, facilitating effective heat dissipation.
6. Fast Switching: High-speed switching capabilities, making it suitable for applications such as power management and motor control.
7. Thermal Characteristics: Robust thermal performance with a maximum junction temperature (T_J) of 150°C.
These features make the NTD24N06T4G a popular choice for power supplies, DC-DC converters, and other electronic circuits requiring efficient switching capabilities.
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 60V, making it suitable for low to medium voltage applications.
2. Current Rating: Continuous drain current (I_D) of 24A, allowing for efficient handling of significant loads.
3. R_DS(on): A low on-resistance of approximately 0.035 ohms at V_GS = 10V, minimizing power loss during operation.
4. Gate Threshold Voltage: V_GS(th) typically ranges from 2V to 4V, enabling easy drive with standard logic levels.
5. Package: Available in a TO-220 package, facilitating effective heat dissipation.
6. Fast Switching: High-speed switching capabilities, making it suitable for applications such as power management and motor control.
7. Thermal Characteristics: Robust thermal performance with a maximum junction temperature (T_J) of 150°C.
These features make the NTD24N06T4G a popular choice for power supplies, DC-DC converters, and other electronic circuits requiring efficient switching capabilities.
Pinout
The NTD24N06T4G is an N-channel MOSFET with a total of 6 pins. Its primary functions include switching and amplification in various electronic applications. The pin configuration is as follows:
1. Gate (G): Controls the MOSFET's operation.
2. Drain (D): The terminal through which current flows out when the MOSFET is on.
3. Source (S): The terminal through which current flows in when the MOSFET is on.
4. Drain (D): Another drain pin, allowing for better layout flexibility.
5. Source (S): Another source pin, enhancing thermal performance.
6. Gate (G): Another gate pin, providing redundancy for driving.
This MOSFET is rated for a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of 24A, making it suitable for high-power applications.
1. Gate (G): Controls the MOSFET's operation.
2. Drain (D): The terminal through which current flows out when the MOSFET is on.
3. Source (S): The terminal through which current flows in when the MOSFET is on.
4. Drain (D): Another drain pin, allowing for better layout flexibility.
5. Source (S): Another source pin, enhancing thermal performance.
6. Gate (G): Another gate pin, providing redundancy for driving.
This MOSFET is rated for a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of 24A, making it suitable for high-power applications.
Manufacturer
The NTD24N06T4G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in designing and producing a wide range of electronic components and solutions, including power management, analog, and imaging products. The company serves various industries such as automotive, industrial, and consumer electronics. ON Semiconductor is known for its commitment to sustainability and innovation, focusing on providing energy-efficient solutions and advanced technologies to meet the evolving needs of its customers.
Application
The NTD24N06T4G is an N-channel MOSFET commonly used in various applications such as power management, motor control, and switching power supplies. Its high voltage and current handling capabilities make it suitable for automotive applications, industrial automation, and telecommunications. Additionally, it can be utilized in LED drivers, battery management systems, and as a switch in DC-DC converters. The device is valued for its efficiency and thermal performance in controlling power in electronic circuits.
Package
The NTD24N06T4G is packaged in a TO-220 form factor. This package type provides efficient heat dissipation and is suitable for high-power applications.
