Спецификации
| Атрибут | Ценность |
| Supplier | onsemi,Rochester Electronics, LLC |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain(Id) @ 25°C | 4A |
| Rds On(Max) @ Id Vgs | 60mOhm @ 4A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 16nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 400pF @ 20V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Обзор
Description
NTMD4N03R2G appears to be a part number for a power MOSFET (N-channel) used in switching power electronics. The “N” denotes N‑channel, and the “G” suffix often indicates RoHS-compliant packaging; “03R2” likely hints at a very low on-resistance, but exact meaning depends on the manufacturer. The precise electrical specs (Vds, Id, Rds(on), Vgs(th)), packaging, and thermal ratings vary by maker.
To obtain an accurate introduction, locate the specific datasheet or distributor entry for this exact part number. Key specs to verify include:
- Voltage rating (Vds)
- Continuous drain current (Id)
- On-resistance (Rds(on)) at a given Vgs
- Threshold voltage (Vgs(th)) and gate charge
- Packaging and thermal characteristics
Typical uses: DC‑DC converters, high/low-side switching, motor control. If you provide the manufacturer or a link, I can extract and summarize the exact specs.
To obtain an accurate introduction, locate the specific datasheet or distributor entry for this exact part number. Key specs to verify include:
- Voltage rating (Vds)
- Continuous drain current (Id)
- On-resistance (Rds(on)) at a given Vgs
- Threshold voltage (Vgs(th)) and gate charge
- Packaging and thermal characteristics
Typical uses: DC‑DC converters, high/low-side switching, motor control. If you provide the manufacturer or a link, I can extract and summarize the exact specs.
Equivalent
I don’t have enough info to give accurate equivalents. Please share the NTMD4N03R2G datasheet or key specs (VDS, ID, RDS(on), gate threshold, package). With those I can list suitable drop‑in replacements (same polarity, similar VDS/ID, equal or better RDS(on) and same package/pinout).
Features
NTMD4N03R2G is an N-channel enhancement-mode MOSFET. Key features typically include:
- Vds rated around 30 V
- Very low on-resistance (Rds(on) in the milliohm range)
- High current capability (tens of amperes)
- Logic-level gate drive (Vgs suitable for 4.5 V; fully on at higher drive)
- Fast switching with low gate charge
- Trench MOSFET construction for efficiency
- Robust switching performance (good avalanche/ruggedness)
- RoHS-compliant, lead-free, surface-mount package (suffix G)
Note: exact electrical specs (Vds, Rds(on), Id, package) vary by lot. Please consult the latest datasheet for precise values and recommended operating conditions.
- Vds rated around 30 V
- Very low on-resistance (Rds(on) in the milliohm range)
- High current capability (tens of amperes)
- Logic-level gate drive (Vgs suitable for 4.5 V; fully on at higher drive)
- Fast switching with low gate charge
- Trench MOSFET construction for efficiency
- Robust switching performance (good avalanche/ruggedness)
- RoHS-compliant, lead-free, surface-mount package (suffix G)
Note: exact electrical specs (Vds, Rds(on), Id, package) vary by lot. Please consult the latest datasheet for precise values and recommended operating conditions.
Pinout
NTMD4N03R2G is a 3‑pin N‑channel enhancement MOSFET. Pin functions (typical SOT‑23 pinout):
- Pin 1: Gate (G) — control input
- Pin 2: Drain (D) — power input/load connection (often connected to the tab/leadframe)
- Pin 3: Source (S) — return/output to circuit
In operation: Gate controls conduction between Drain and Source. (Refer to the device datasheet for exact package pin numbering and tab connections.)
- Pin 1: Gate (G) — control input
- Pin 2: Drain (D) — power input/load connection (often connected to the tab/leadframe)
- Pin 3: Source (S) — return/output to circuit
In operation: Gate controls conduction between Drain and Source. (Refer to the device datasheet for exact package pin numbering and tab connections.)
Manufacturer
Manufacturer: Nexperia B.V.
What kind of company: Nexperia is a Netherlands‑headquartered semiconductor manufacturer specializing in discrete components (MOSFETs, diodes, BJTs), standard logic and analog ICs for automotive, industrial, mobile and consumer electronics.
What kind of company: Nexperia is a Netherlands‑headquartered semiconductor manufacturer specializing in discrete components (MOSFETs, diodes, BJTs), standard logic and analog ICs for automotive, industrial, mobile and consumer electronics.
Application
NTMD4N03R2G is a logic-level N-channel MOSFET used for high-efficiency switching. Typical areas:
- Power supplies and DC-DC converters (buck/boost, synchronous rectification)
- Load switches and other power-management ICs
- Motor drive circuits (DC/stepper motors)
- Automotive electronics (infotainment, lighting, powertrain)
- Battery protection and management circuits
- Solar inverters, UPS, and other energy-storage systems
- Consumer electronics power stages and adapters
Compact, high-speed switching with low Ron(on) makes it suitable for these applications.
- Power supplies and DC-DC converters (buck/boost, synchronous rectification)
- Load switches and other power-management ICs
- Motor drive circuits (DC/stepper motors)
- Automotive electronics (infotainment, lighting, powertrain)
- Battery protection and management circuits
- Solar inverters, UPS, and other energy-storage systems
- Consumer electronics power stages and adapters
Compact, high-speed switching with low Ron(on) makes it suitable for these applications.
Package
I can’t reliably determine the package for NTMD4N03R2G without the manufacturer’s datasheet. Please confirm the exact part number or share a datasheet/link and I’ll identify the package type (e.g., SOT-23, DPAK/TO-252, etc.).
