Спецификации
| Атрибут | Ценность |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 400mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 800mOhm @ 200mA, 10V |
| Vgs(th)(Max) @ Id | 2.3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 2.18 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 70 pF @ 5 V |
| Power Dissipation (Max) | 225mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
Обзор
Description
The NTR0202PLT1G is a surface-mount (SMD) resistor network from ON Semiconductor, designed for compact PCB applications. It features two 200 Ω resistors in a 0402 package (1.0 x 0.5 mm), arranged in an isolated dual configuration.
Key specifications:
- Resistance: 200 Ω per resistor (±1% tolerance).
- Power Rating: 50 mW per resistor.
- Operating Temperature: -55°C to +155°C.
- Voltage Rating: 25 V.
Ideal for signal conditioning, pull-up/pull-down circuits, and impedance matching in space-constrained designs like mobile devices, IoT, and wearables. Its lead-free, RoHS-compliant construction ensures environmental compliance.
For detailed specs, refer to the datasheet on ON Semiconductor’s website.
Key specifications:
- Resistance: 200 Ω per resistor (±1% tolerance).
- Power Rating: 50 mW per resistor.
- Operating Temperature: -55°C to +155°C.
- Voltage Rating: 25 V.
Ideal for signal conditioning, pull-up/pull-down circuits, and impedance matching in space-constrained designs like mobile devices, IoT, and wearables. Its lead-free, RoHS-compliant construction ensures environmental compliance.
For detailed specs, refer to the datasheet on ON Semiconductor’s website.
Pinout
The NTR0202PLT1G is a dual N-channel MOSFET in a SOT-363 (SC-88) package with 6 pins.
### Pin Functions:
1. Pin 1 (Gate 1): Controls the first MOSFET.
2. Pin 2 (Source 1): Source terminal of the first MOSFET.
3. Pin 3 (Drain 2): Drain terminal of the second MOSFET.
4. Pin 4 (Gate 2): Controls the second MOSFET.
5. Pin 5 (Source 2): Source terminal of the second MOSFET.
6. Pin 6 (Drain 1): Drain terminal of the first MOSFET.
### Key Features:
- Low threshold voltage (suitable for portable devices).
- Low on-resistance for efficient switching.
- Dual independent MOSFETs in a compact package.
Commonly used in load switching, power management, and signal routing in small electronics.
### Pin Functions:
1. Pin 1 (Gate 1): Controls the first MOSFET.
2. Pin 2 (Source 1): Source terminal of the first MOSFET.
3. Pin 3 (Drain 2): Drain terminal of the second MOSFET.
4. Pin 4 (Gate 2): Controls the second MOSFET.
5. Pin 5 (Source 2): Source terminal of the second MOSFET.
6. Pin 6 (Drain 1): Drain terminal of the first MOSFET.
### Key Features:
- Low threshold voltage (suitable for portable devices).
- Low on-resistance for efficient switching.
- Dual independent MOSFETs in a compact package.
Commonly used in load switching, power management, and signal routing in small electronics.
Package
The NTR0202PLT1G is a dual N-channel MOSFET in a DFN-6 (2x2) package. This small, leadless surface-mount package (2mm x 2mm) is designed for high-density PCB applications, offering efficient thermal performance and space-saving benefits. It's commonly used in power management, load switching, and portable electronics.
