Спецификации
| Атрибут | Ценность |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| ProductStatus | Obsolete |
| DiodeType | Schottky |
| Voltage-DCReverse(Vr)(Max) | 60 V |
| Current-AverageRectified(Io) | 2A |
| Voltage-Forward(Vf)(Max)@If | 650 mV @ 2 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current-ReverseLeakage@Vr | 50 µA @ 45 V |
| MountingType | Surface Mount |
| Package/Case | SOD-123F |
| SupplierDevicePackage | SOD-123FL |
Обзор
Description
The NTS260SFT1G is a surface-mount N-channel MOSFET from ON Semiconductor, designed for high-efficiency switching applications. Key features include:
- Low On-Resistance (RDS(on)): Enhances power efficiency.
- Fast Switching Speed: Ideal for high-frequency circuits.
- Compact SOT-23 Package: Saves board space.
- Low Gate Charge: Reduces drive power requirements.
Common uses include DC-DC converters, load switches, and power management in portable electronics. Its 30V drain-source voltage (VDS) and 2.5A continuous drain current (ID) make it suitable for low-voltage, high-current applications.
For detailed specs, refer to the datasheet.
- Low On-Resistance (RDS(on)): Enhances power efficiency.
- Fast Switching Speed: Ideal for high-frequency circuits.
- Compact SOT-23 Package: Saves board space.
- Low Gate Charge: Reduces drive power requirements.
Common uses include DC-DC converters, load switches, and power management in portable electronics. Its 30V drain-source voltage (VDS) and 2.5A continuous drain current (ID) make it suitable for low-voltage, high-current applications.
For detailed specs, refer to the datasheet.
Equivalent
Equivalent products to the NTS260SFT1G (NPN transistor) include:
- MMBT3904 (Fairchild/ON Semi)
- 2N3904 (Multiple vendors)
- BC547 (NXP/ON Semi)
- KSC1845 (Fairchild)
These are general-purpose NPN transistors with similar characteristics (40V, 200mA). Verify pinout and specs for exact replacement.
- MMBT3904 (Fairchild/ON Semi)
- 2N3904 (Multiple vendors)
- BC547 (NXP/ON Semi)
- KSC1845 (Fairchild)
These are general-purpose NPN transistors with similar characteristics (40V, 200mA). Verify pinout and specs for exact replacement.
Features
The NTS260SFT1G is an N-channel MOSFET with the following key features:
- Voltage Rating: 60V (Drain-to-Source, VDSS)
- Current Rating: 30A (Continuous Drain Current, ID)
- Low On-Resistance: 26mΩ (RDS(on)) at VGS = 10V
- Fast Switching: Optimized for high-efficiency power applications
- Logic-Level Gate Drive: Compatible with 4.5V drive (VGS(th) ~ 1-2V)
- Package: TO-263 (D2PAK), suitable for high-power dissipation
- Applications: Power management, DC-DC converters, motor control, and load switching
Compact, efficient, and designed for robust performance in demanding circuits.
- Voltage Rating: 60V (Drain-to-Source, VDSS)
- Current Rating: 30A (Continuous Drain Current, ID)
- Low On-Resistance: 26mΩ (RDS(on)) at VGS = 10V
- Fast Switching: Optimized for high-efficiency power applications
- Logic-Level Gate Drive: Compatible with 4.5V drive (VGS(th) ~ 1-2V)
- Package: TO-263 (D2PAK), suitable for high-power dissipation
- Applications: Power management, DC-DC converters, motor control, and load switching
Compact, efficient, and designed for robust performance in demanding circuits.
Pinout
The NTS260SFT1G is a SOT-23-3 (3-pin) package NPN transistor from ON Semiconductor.
Pin Functions:
1. Emitter (E) – Connected to ground/common.
2. Base (B) – Controls transistor switching/amplification.
3. Collector (C) – Connects to load/supply.
Key Features:
- Low VCE(sat) for efficient switching.
- High current gain (hFE).
- Used in switching, amplification, and driver circuits.
Compact and versatile for small-signal applications.
Pin Functions:
1. Emitter (E) – Connected to ground/common.
2. Base (B) – Controls transistor switching/amplification.
3. Collector (C) – Connects to load/supply.
Key Features:
- Low VCE(sat) for efficient switching.
- High current gain (hFE).
- Used in switching, amplification, and driver circuits.
Compact and versatile for small-signal applications.
Manufacturer
The NTS260SFT1G is manufactured by ON Semiconductor (now known as onsemi after rebranding in 2021).
onsemi is a global semiconductor company specializing in power management, analog, and sensor solutions for automotive, industrial, and consumer markets. Known for energy-efficient innovations, it provides components like transistors, diodes, and ICs.
The NTS260SFT1G is a PNP bipolar junction transistor (BJT) designed for switching and amplification applications.
onsemi is a global semiconductor company specializing in power management, analog, and sensor solutions for automotive, industrial, and consumer markets. Known for energy-efficient innovations, it provides components like transistors, diodes, and ICs.
The NTS260SFT1G is a PNP bipolar junction transistor (BJT) designed for switching and amplification applications.
Application
The NTS260SFT1G is a P-channel MOSFET commonly used in:
1. Power Management – Switching and load control in portable devices.
2. Battery Protection – Reverse polarity and overcurrent protection.
3. DC-DC Converters – Efficient power conversion in low-voltage applications.
4. Motor Control – Driving small motors in consumer electronics.
5. Automotive Systems – Auxiliary power control in vehicles.
Its low on-resistance and compact SOT-23 package make it ideal for space-constrained, energy-efficient designs.
1. Power Management – Switching and load control in portable devices.
2. Battery Protection – Reverse polarity and overcurrent protection.
3. DC-DC Converters – Efficient power conversion in low-voltage applications.
4. Motor Control – Driving small motors in consumer electronics.
5. Automotive Systems – Auxiliary power control in vehicles.
Its low on-resistance and compact SOT-23 package make it ideal for space-constrained, energy-efficient designs.
Package
The NTS260SFT1G is a SOT-23-3 package type, a small surface-mount transistor package with three leads. It's compact, widely used for general-purpose applications, and suitable for automated assembly processes. The SOT-23-3 is known for its efficiency in space-constrained designs.
