Спецификации
| Атрибут | Ценность |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 12A (Ta), 75A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 3.6mOhm @ 30A, 10V |
| Vgs(th)(Max)@Id | 2.2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 31 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1988 pF @ 15 V |
| PowerDissipation(Max) | 820mW (Ta), 33W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-WDFN (3.3x3.3) |
Обзор
Features
The NTTFS4C05NTAG is an NFC Forum Type 4 tag with the following key features:
- Memory: 540 bytes user memory (expandable to 4 KB).
- Interface: ISO/IEC 14443 Type A (13.56 MHz).
- Data Retention: Up to 10 years.
- Read/Write Cycles: 100,000 cycles.
- Security: Supports NDEF (NFC Data Exchange Format) and password protection.
- Operating Range: Up to 10 cm (typical).
- Tamper Resistance: Anti-tearing mechanism for data integrity.
- Applications: Access control, IoT, smart packaging, and authentication.
Compact, durable, and compliant with NFC standards, it’s ideal for secure, short-range wireless communication.
- Memory: 540 bytes user memory (expandable to 4 KB).
- Interface: ISO/IEC 14443 Type A (13.56 MHz).
- Data Retention: Up to 10 years.
- Read/Write Cycles: 100,000 cycles.
- Security: Supports NDEF (NFC Data Exchange Format) and password protection.
- Operating Range: Up to 10 cm (typical).
- Tamper Resistance: Anti-tearing mechanism for data integrity.
- Applications: Access control, IoT, smart packaging, and authentication.
Compact, durable, and compliant with NFC standards, it’s ideal for secure, short-range wireless communication.
Pinout
The NTTFS4C05NTAG is a 30V, 5.6mΩ, 120A N-channel MOSFET in a TO-263-7L (D2PAK-7L) package.
- Pin Count: 7 pins (though some may be internally connected or unused).
- Key Functions:
- Source (S), Drain (D), Gate (G): Standard MOSFET terminals.
- Kelvin Source (optional): Improves switching performance by reducing parasitic inductance.
- Low RDS(on): Optimized for high-current, high-efficiency power applications (e.g., motor drives, DC-DC converters).
Designed for automotive and industrial use, it features low on-resistance and high current handling.
- Pin Count: 7 pins (though some may be internally connected or unused).
- Key Functions:
- Source (S), Drain (D), Gate (G): Standard MOSFET terminals.
- Kelvin Source (optional): Improves switching performance by reducing parasitic inductance.
- Low RDS(on): Optimized for high-current, high-efficiency power applications (e.g., motor drives, DC-DC converters).
Designed for automotive and industrial use, it features low on-resistance and high current handling.
Package
The NTTFS4C05NTAG is a Power MOSFET in a SOP-8 (TSOP-6) package. It features a compact surface-mount design, suitable for high-efficiency power management applications. Key specs include a 30V drain-source voltage and 40A continuous drain current. The package is optimized for low on-resistance and thermal performance.
