Спецификации
| Атрибут | Ценность |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | N and P-Channel |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 20V |
| Current-ContinuousDrain(Id)@25°C | 540mA, 430mA |
| RdsOn(Max)@IdVgs | 550mOhm @ 540mA, 4.5V |
| Vgs(th)(Max)@Id | 1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 2.5nC @ 4.5V |
| InputCapacitance(Ciss)(Max)@Vds | 150pF @ 16V |
| Power-Max | 250mW |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | SOT-563, SOT-666 |
Обзор
Description
The NTZD3155CT2G is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by ON Semiconductor. It is designed for switching applications and is commonly used in power management systems, load switching, and DC-DC conversion circuits. The device features low on-state resistance, which helps in reducing power loss, and supports fast switching speeds, enhancing the efficiency of electronic circuits.
It comes in a compact SOT-563 package that is suitable for space-constrained applications. The device operates at a maximum drain-source voltage (V_DS) of 20V and can handle a continuous drain current (I_D) of approximately 1A per channel. Its low threshold voltage makes it compatible with low-voltage logic levels, allowing for easy interfacing with microcontrollers and other digital devices.
The NTZD3155CT2G is appreciated for its robustness and reliability, making it a popular choice in consumer electronics, communication devices, and industrial applications where efficient power management is crucial. Always refer to the datasheet for detailed specifications and design considerations.
It comes in a compact SOT-563 package that is suitable for space-constrained applications. The device operates at a maximum drain-source voltage (V_DS) of 20V and can handle a continuous drain current (I_D) of approximately 1A per channel. Its low threshold voltage makes it compatible with low-voltage logic levels, allowing for easy interfacing with microcontrollers and other digital devices.
The NTZD3155CT2G is appreciated for its robustness and reliability, making it a popular choice in consumer electronics, communication devices, and industrial applications where efficient power management is crucial. Always refer to the datasheet for detailed specifications and design considerations.
Equivalent
The NTZD3155CT2G is a dual N-channel MOSFET. Equivalent products include the following:
1. Si2302DS - From Vishay, an N-channel MOSFET with similar specifications.
2. BSN20 - From NXP, another dual N-channel MOSFET alternative.
3. 2N7002 - From various manufacturers like ON Semiconductor and Fairchild, offering comparable electrical characteristics.
These equivalents should be verified for specific parameter matches and package compatibility in your application.
1. Si2302DS - From Vishay, an N-channel MOSFET with similar specifications.
2. BSN20 - From NXP, another dual N-channel MOSFET alternative.
3. 2N7002 - From various manufacturers like ON Semiconductor and Fairchild, offering comparable electrical characteristics.
These equivalents should be verified for specific parameter matches and package compatibility in your application.
Features
The NTZD3155CT2G is a dual N-channel MOSFET designed for use in various electronic applications. Key features include:
1. Dual N-Channel Configuration: The device integrates two N-channel MOSFETs in a single package, suitable for compact circuit designs.
2. Low On-Resistance: It features a low on-state resistance, which ensures efficient current flow and minimal power loss.
3. High-Speed Switching: The MOSFET supports rapid switching speeds, making it ideal for fast-paced electronic circuits.
4. Compact Package: Typically available in a small package, such as SOT-563, which is ideal for space-constrained applications.
5. Low Gate Charge: This characteristic allows for efficient driving, reducing the energy required to switch the device.
6. Applications: Commonly used in load switching, battery management, DC-DC converters, and power management systems.
These features make the NTZD3155CT2G a versatile component for use in various portable and power-sensitive devices.
1. Dual N-Channel Configuration: The device integrates two N-channel MOSFETs in a single package, suitable for compact circuit designs.
2. Low On-Resistance: It features a low on-state resistance, which ensures efficient current flow and minimal power loss.
3. High-Speed Switching: The MOSFET supports rapid switching speeds, making it ideal for fast-paced electronic circuits.
4. Compact Package: Typically available in a small package, such as SOT-563, which is ideal for space-constrained applications.
5. Low Gate Charge: This characteristic allows for efficient driving, reducing the energy required to switch the device.
6. Applications: Commonly used in load switching, battery management, DC-DC converters, and power management systems.
These features make the NTZD3155CT2G a versatile component for use in various portable and power-sensitive devices.
Pinout
The NTZD3155CT2G is a dual N-channel MOSFET produced by ON Semiconductor. It is designed for use in low-voltage applications such as load switching, power management in portable devices, and high-speed switching.
The package for the NTZD3155CT2G is a 6-pin TSOP-6 (also known as SOT-23-6). The pin configuration is as follows:
1. Pin 1 (G1): Gate of the first N-channel MOSFET.
2. Pin 2 (S1): Source of the first N-channel MOSFET.
3. Pin 3 (D2): Drain of the second N-channel MOSFET.
4. Pin 4 (S2): Source of the second N-channel MOSFET.
5. Pin 5 (G2): Gate of the second N-channel MOSFET.
6. Pin 6 (D1): Drain of the first N-channel MOSFET.
This MOSFET is suitable for applications requiring efficient switching and low on-resistance, providing an excellent solution for space-constrained environments.
The package for the NTZD3155CT2G is a 6-pin TSOP-6 (also known as SOT-23-6). The pin configuration is as follows:
1. Pin 1 (G1): Gate of the first N-channel MOSFET.
2. Pin 2 (S1): Source of the first N-channel MOSFET.
3. Pin 3 (D2): Drain of the second N-channel MOSFET.
4. Pin 4 (S2): Source of the second N-channel MOSFET.
5. Pin 5 (G2): Gate of the second N-channel MOSFET.
6. Pin 6 (D1): Drain of the first N-channel MOSFET.
This MOSFET is suitable for applications requiring efficient switching and low on-resistance, providing an excellent solution for space-constrained environments.
Manufacturer
The NTZD3155CT2G is a product manufactured by onsemi, previously known as ON Semiconductor. Onsemi is a semiconductor company that designs and manufactures a wide range of products, including power and signal management, logic, discrete, and custom devices. The company primarily serves the automotive, industrial, cloud power, and Internet of Things (IoT) markets. Known for its focus on energy-efficient electronics, onsemi provides solutions that help engineers develop innovative and environmentally conscious designs.
Application
The NTZD3155CT2G is a dual N-channel MOSFET commonly used in applications that require efficient switching and power management. Key application areas include:
1. DC-DC Converters: Utilized in switching regulators for efficient voltage conversion.
2. Load Switching: Suitable for controlling power in portable devices.
3. Battery Management: Used in protection circuits for battery-powered devices.
4. Signal Switching: Useful in applications that require fast switching capabilities.
5. Automotive Electronics: Employed in various control systems for vehicles.
6. Consumer Electronics: Found in devices like smartphones and laptops for power management.
The dual MOSFET design allows for compact and efficient circuit designs in these applications.
1. DC-DC Converters: Utilized in switching regulators for efficient voltage conversion.
2. Load Switching: Suitable for controlling power in portable devices.
3. Battery Management: Used in protection circuits for battery-powered devices.
4. Signal Switching: Useful in applications that require fast switching capabilities.
5. Automotive Electronics: Employed in various control systems for vehicles.
6. Consumer Electronics: Found in devices like smartphones and laptops for power management.
The dual MOSFET design allows for compact and efficient circuit designs in these applications.
Package
The NTZD3155CT2G is a dual MOSFET device packaged in a small, surface-mount SC-88 (SOT-363) package, which is designed for compact spaces in electronic circuits.
