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NVMFD5877NLT1G
+БОМMOSFET 2N-CH 60V 6A 8SOIC
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ПроизводительОнсеми
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Мфр. Часть #NVMFD5877NLT1G
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Лист данных NVMFD5877NLT1G DataSheet
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Пакет TDFN-8
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В наличии6114
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Supplier | onsemi |
| Package | Tape & Reel (TR) |
| Series | Automotive, AEC-Q101 |
| ProductStatus | Obsolete |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 60V |
| Current-ContinuousDrain(Id)@25°C | 6A |
| RdsOn(Max)@IdVgs | 39mOhm @ 7.5A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 20nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 540pF @ 25V |
| Power-Max | 3.2W |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-PowerTDFN |
Обзор
Description
Key features of the NVMFD5877NLT1G include a maximum drain-source voltage (V_ds) of 30V and a continuous drain current (I_d) of up to 21A. It is often used in applications such as DC-DC converters, motor control, and as a switch in battery-powered devices due to its high-efficiency performance. The transistor is housed in a compact SOT-23 package, which is suitable for space-constrained circuit boards. Its low thermal resistance and high reliability make it a preferred choice in both consumer electronics and industrial applications.
Equivalent
1. Vishay Siliconix SiR640DP - Offers similar voltage and current ratings.
2. Infineon BSC050NE2LS - Comparable in performance with low RDS(on).
3. Fairchild/ON Semiconductor FDMS86101 - Matches in terms of voltage and current handling.
Always verify specific parameters like RDS(on), package type, and thermal ratings to ensure compatibility.
Features
Key features include:
- N-Channel MOSFET: Allows high currents and offers good thermal performance.
- Low On-Resistance: Reduces conduction loss, enhancing efficiency.
- Fast Switching Speed: Supports high-frequency operations.
- Compact Package: Available in a small footprint package for space-constrained applications.
- High Power Density: Offers robust performance in a compact form.
- RoHS Compliant: Meets environmental standards for hazardous materials.
Overall, the NVMFD5877NLT1G is a reliable choice for applications requiring efficient power management and compact design.
Pinout
1. Pin 1: Source
2. Pin 2: Source
3. Pin 3: Source
4. Pin 4: Gate
5. Pin 5: Drain
6. Pin 6: Drain
7. Pin 7: Drain
8. Pin 8: Drain
The Source pins are internally connected, and the Drain pins are also internally connected. The Gate is used to control the MOSFET's switching operation. This device is designed for low voltage applications and provides high efficiency and fast switching characteristics, making it suitable for battery-powered applications and DC-DC converters.
Manufacturer
Application
1. Power Management: Used in DC-DC converters and voltage regulation modules for efficient power conversion.
2. Switching Applications: Ideal for load switches, relay replacements, and other high-speed switching operations.
3. Automotive Systems: Employed in automotive electronics for electric motor control and battery management.
4. Consumer Electronics: Utilized in power supply circuits for laptops, tablets, and smartphones.
5. Industrial Equipment: Applied in motor drives, uninterruptible power supplies (UPS), and industrial automation systems.
Its low on-resistance and compact package make it suitable for space-constrained applications requiring efficient thermal management.