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SI2318DS-T1-GE3
+БОМMOSFET N-CH 40V 3A SOT23-3
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ПроизводительVishay Силиконикс
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Мфр. Часть #SI2318DS-T1-GE3
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В наличии4061
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Series | TrenchFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 3.9A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 540 pF @ 20 V |
| Power Dissipation (Max) | 750mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Base Product Number | SI2318 |
Обзор
Description
The SI2318DS-T1-GE3 is a N-channel MOSFET designed for various power management applications. It features a low on-resistance, which enhances efficiency in switching circuits, making it suitable for use in power supplies, DC-DC converters, and motor control applications.
With a maximum continuous drain current typically around 20A and a maximum drain-source voltage of 30V, this MOSFET is effective for medium voltage applications. Its compact package allows for easy integration into space-constrained designs. The device is characterized by fast switching speeds and low gate charge, which contribute to reduced power losses during operation.
The SI2318DS-T1-GE3 also comes with a variety of protective features, such as intrinsic body diodes, making it robust for different circuit conditions. Its performance attributes make it a popular choice among engineers looking to optimize efficiency in electronic designs.
With a maximum continuous drain current typically around 20A and a maximum drain-source voltage of 30V, this MOSFET is effective for medium voltage applications. Its compact package allows for easy integration into space-constrained designs. The device is characterized by fast switching speeds and low gate charge, which contribute to reduced power losses during operation.
The SI2318DS-T1-GE3 also comes with a variety of protective features, such as intrinsic body diodes, making it robust for different circuit conditions. Its performance attributes make it a popular choice among engineers looking to optimize efficiency in electronic designs.
Equivalent
The SI2318DS-T1-GE3 is a N-channel MOSFET. Equivalent products include the BSS138, SI2302, and IRLML2502. When looking for alternatives, consider specifications such as RDS(on), VGS, and current ratings to ensure compatibility. Always refer to datasheets for precise comparisons.
Features
The SI2318DS-T1-GE3 is an N-channel MOSFET designed for efficient switching applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: Capable of handling a continuous drain current (I_D) of up to 4.5A at room temperature.
3. R_DS(on): Low on-resistance (typically around 0.020Ω), which enhances efficiency by reducing power loss during operation.
4. Gate Threshold Voltage: Features a gate threshold voltage (V_GS(th)) range of 1-2.5V, allowing for low-voltage drive applications.
5. Fast Switching: High-speed switching capability, making it suitable for applications like DC-DC converters and motor drivers.
6. Package Type: Available in a compact SO-8 package, facilitating easy integration into designs with limited space.
7. Thermal Performance: Good thermal characteristics support higher power applications.
These features make the SI2318DS-T1-GE3 ideal for power management and switching applications in consumer electronics, automotive, and industrial sectors.
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: Capable of handling a continuous drain current (I_D) of up to 4.5A at room temperature.
3. R_DS(on): Low on-resistance (typically around 0.020Ω), which enhances efficiency by reducing power loss during operation.
4. Gate Threshold Voltage: Features a gate threshold voltage (V_GS(th)) range of 1-2.5V, allowing for low-voltage drive applications.
5. Fast Switching: High-speed switching capability, making it suitable for applications like DC-DC converters and motor drivers.
6. Package Type: Available in a compact SO-8 package, facilitating easy integration into designs with limited space.
7. Thermal Performance: Good thermal characteristics support higher power applications.
These features make the SI2318DS-T1-GE3 ideal for power management and switching applications in consumer electronics, automotive, and industrial sectors.
Manufacturer
The SI2318DS-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global leader in discrete semiconductors and passive electronic components. Founded in 1962, the company is headquartered in Malvern, Pennsylvania, USA.
Vishay specializes in a wide range of products, including diodes, transistors, resistors, capacitors, and optoelectronics, serving various industries such as automotive, industrial, consumer electronics, and telecommunications. The SI2318DS-T1-GE3 specifically is a N-channel MOSFET designed for applications in power management and switching. Vishay is known for its commitment to innovation and quality, providing reliable and high-performance solutions for electronic design and manufacturing.
Vishay specializes in a wide range of products, including diodes, transistors, resistors, capacitors, and optoelectronics, serving various industries such as automotive, industrial, consumer electronics, and telecommunications. The SI2318DS-T1-GE3 specifically is a N-channel MOSFET designed for applications in power management and switching. Vishay is known for its commitment to innovation and quality, providing reliable and high-performance solutions for electronic design and manufacturing.
Application
The SI2318DS-T1-GE3 is a N-channel MOSFET designed for various applications, including:
1. Power Management: Used in DC-DC converters and voltage regulation.
2. Switching Applications: Ideal for low-voltage and low-power switching in industrial and consumer electronics.
3. LED Drivers: Suitable for driving LEDs in lighting applications.
4. Motor Control: Utilized in small motor control circuits.
5. Battery Management: Effective in battery protection and management systems.
Its low on-resistance and high-speed switching capabilities make it versatile for these applications.
1. Power Management: Used in DC-DC converters and voltage regulation.
2. Switching Applications: Ideal for low-voltage and low-power switching in industrial and consumer electronics.
3. LED Drivers: Suitable for driving LEDs in lighting applications.
4. Motor Control: Utilized in small motor control circuits.
5. Battery Management: Effective in battery protection and management systems.
Its low on-resistance and high-speed switching capabilities make it versatile for these applications.
Package
The SI2318DS-T1-GE3 is packaged in a SOT-23-3 surface mount package.
