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SI4401BDY-T1-E3
+БОМMOSFET P-CH 40V 8.7A 8SO
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ПроизводительVishay Силиконикс
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Мфр. Часть #SI4401BDY-T1-E3
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Лист данных SI4401BDY-T1-E3 DataSheet
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В наличии6641
365 Дни гарантии качества
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90-гарантия послепродажного дня
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Спецификации
| Атрибут | Ценность |
| Series | TrenchFET® |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 8.7A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 10.5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 5 V |
| Vgs (Max) | ±20V |
| Power Dissipation (Max) | 1.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Base Product Number | SI4401 |
Обзор
Description
The SI4401BDY-T1-E3 is a highly integrated, low-power, high-performance RF transceiver designed for wireless communication applications. Operating in the 2.4 GHz frequency band, it supports various protocols, making it suitable for applications like Zigbee, Bluetooth, and other ISM band communications.
Key features include a low supply voltage, efficient power consumption, and a compact package, facilitating easy integration into space-constrained designs. The device supports advanced modulation schemes, enabling robust data transmission with reliable error correction.
Its built-in features such as frequency hopping, and various transmit power settings enhance performance in noisy environments. The SI4401BDY-T1-E3 also offers flexible interfaces for connection with microcontrollers, making it adaptable for various project requirements.
Overall, it is an ideal choice for developers looking to implement wireless connectivity in consumer electronics, home automation, and industrial applications.
Key features include a low supply voltage, efficient power consumption, and a compact package, facilitating easy integration into space-constrained designs. The device supports advanced modulation schemes, enabling robust data transmission with reliable error correction.
Its built-in features such as frequency hopping, and various transmit power settings enhance performance in noisy environments. The SI4401BDY-T1-E3 also offers flexible interfaces for connection with microcontrollers, making it adaptable for various project requirements.
Overall, it is an ideal choice for developers looking to implement wireless connectivity in consumer electronics, home automation, and industrial applications.
Equivalent
The SI4401BDY-T1-E3 is a Silicon Labs RF transceiver. Equivalent products include the nRF24L01 from Nordic Semiconductor, the CC2500 from Texas Instruments, and the RFM69 from HopeRF. Each offers similar low-power wireless communication capabilities, but specifications may vary, so it's essential to check compatibility with your application.
Features
The SI4401BDY-T1-E3 is a high-performance N-channel MOSFET designed for various switching applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: Can handle a continuous drain current (I_D) of up to 36A.
3. R_DS(on): Low on-resistance (R_DS(on)) typically around 10 mΩ, enhancing efficiency and reducing heat generation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 1V to 2.5V, allowing for easy drive with lower gate voltages.
5. Package: Available in a compact SO-8 package, suitable for space-constrained applications.
6. Fast Switching: Capable of high-speed operation, making it ideal for applications like power management, motor control, and DC-DC converters.
7. Thermal Performance: Features good thermal stability and is designed for high-temperature applications.
This MOSFET is suitable for various consumer electronics and industrial applications where efficient power control is crucial.
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: Can handle a continuous drain current (I_D) of up to 36A.
3. R_DS(on): Low on-resistance (R_DS(on)) typically around 10 mΩ, enhancing efficiency and reducing heat generation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 1V to 2.5V, allowing for easy drive with lower gate voltages.
5. Package: Available in a compact SO-8 package, suitable for space-constrained applications.
6. Fast Switching: Capable of high-speed operation, making it ideal for applications like power management, motor control, and DC-DC converters.
7. Thermal Performance: Features good thermal stability and is designed for high-temperature applications.
This MOSFET is suitable for various consumer electronics and industrial applications where efficient power control is crucial.
Pinout
The SI4401BDY-T1-E3 is a low-power, high-performance RF transceiver chip designed for wireless communications. It features a 20-pin QFN (Quad Flat No-lead) package. The key functions of the pins include:
1. RF Output: For transmitting RF signals.
2. RF Input: For receiving RF signals.
3. Digital Interface: SPI (Serial Peripheral Interface) pins for programming and communication with microcontrollers.
4. Power Supply: Pins for VDD (power supply) and GND (ground).
5. Control Pins: To manage the operation of the transceiver, including sleep modes.
6. Antennas: Connections for external antennas.
7. Other Functions: Pins for status indication and additional functionalities like GPIO (General Purpose Input/Output).
For specific pin assignments and detailed functions, refer to the manufacturer's datasheet.
1. RF Output: For transmitting RF signals.
2. RF Input: For receiving RF signals.
3. Digital Interface: SPI (Serial Peripheral Interface) pins for programming and communication with microcontrollers.
4. Power Supply: Pins for VDD (power supply) and GND (ground).
5. Control Pins: To manage the operation of the transceiver, including sleep modes.
6. Antennas: Connections for external antennas.
7. Other Functions: Pins for status indication and additional functionalities like GPIO (General Purpose Input/Output).
For specific pin assignments and detailed functions, refer to the manufacturer's datasheet.
Manufacturer
The SI4401BDY-T1-E3 is manufactured by Silicon Labs, a semiconductor company based in Austin, Texas. Silicon Labs specializes in high-performance mixed-signal and RF (radio frequency) integrated circuits. The company focuses on providing innovative solutions for various applications, including the Internet of Things (IoT), industrial automation, consumer electronics, and automotive systems. Silicon Labs is known for its commitment to delivering low-power and high-efficiency products, making it a key player in the development of smart and connected devices. The SI4401BDY-T1-E3 specifically is a low-power RF transceiver designed for wireless applications, reflecting the company's emphasis on enabling reliable and efficient communication in compact form factors.
Application
The SI4401BDY-T1-E3 is a low-voltage, N-channel MOSFET primarily used in power management applications. Its key application areas include DC-DC converters, power distribution, load switching, and battery management systems. This MOSFET is ideal for high-efficiency switching applications in consumer electronics, automotive systems, and industrial equipment due to its low on-resistance and fast switching capabilities. It is also utilized in LED drivers and other applications requiring efficient power control.
Package
The SI4401BDY-T1-E3 is packaged in a small, surface-mount SOIC-8 (Small Outline Integrated Circuit) package. This compact form factor is designed for easy integration into various electronic circuits, providing efficient performance for applications like RF communication.
