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SI4497DY-T1-GE3
+БОМMOSFET P-CH 30V 36A 8SO
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ПроизводительVishay Силиконикс
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Мфр. Часть #SI4497DY-T1-GE3
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Лист данных SI4497DY-T1-GE3 DataSheet
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В наличии22970
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 36A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 3.3mOhm @ 20A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 285 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 9685 pF @ 15 V |
| Power Dissipation (Max) | 3.5W (Ta), 7.8W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
Обзор
Description
The SI4497DY-T1-GE3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic applications for switching and amplification. Manufactured by Vishay Siliconix, this component is designed for high-efficiency power management in various electronic devices.
Key features include:
1. Low On-Resistance: The SI4497DY offers low RDS(on), minimizing power loss and enhancing efficiency.
2. High-Speed Switching: Suitable for applications requiring rapid switching speeds.
3. SO-8 Package: Its compact SO-8 surface-mount package is ideal for space-constrained designs.
4. Thermal Performance: Improved thermal characteristics make it suitable for high-power applications.
5. Voltage/Current Ratings: Typically features a drain-source voltage (VDS) rating of around 30V and a continuous drain current (ID) of approximately 12A, making it versatile for various load requirements.
Applications of the SI4497DY-T1-GE3 include power management systems, DC-DC converters, and motor control circuits, where efficient power handling and minimal heat generation are crucial. Its reliability and performance make it a popular choice among engineers for designing efficient electronic systems.
Key features include:
1. Low On-Resistance: The SI4497DY offers low RDS(on), minimizing power loss and enhancing efficiency.
2. High-Speed Switching: Suitable for applications requiring rapid switching speeds.
3. SO-8 Package: Its compact SO-8 surface-mount package is ideal for space-constrained designs.
4. Thermal Performance: Improved thermal characteristics make it suitable for high-power applications.
5. Voltage/Current Ratings: Typically features a drain-source voltage (VDS) rating of around 30V and a continuous drain current (ID) of approximately 12A, making it versatile for various load requirements.
Applications of the SI4497DY-T1-GE3 include power management systems, DC-DC converters, and motor control circuits, where efficient power handling and minimal heat generation are crucial. Its reliability and performance make it a popular choice among engineers for designing efficient electronic systems.
Equivalent
The SI4497DY-T1-GE3 is a N-channel MOSFET. Equivalent products might include the IRLML2803 from Infineon (formerly International Rectifier), BSS138 from ON Semiconductor, and 2N7002 from various manufacturers. Equivalents should have similar voltage, current ratings, and package type, but always verify detailed specifications and pin configurations to ensure compatibility.
Features
The SI4497DY-T1-GE3 is a N-channel MOSFET produced by Vishay Siliconix. Key features include:
1. Voltage & Current Ratings: This MOSFET has a drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of 12.8A, which makes it suitable for various low to medium power applications.
2. Package: It is housed in a PowerPAK SO-8 package, which is compact and provides efficient thermal performance.
3. R_DS(on): The device has a low on-resistance (R_DS(on)) of 6.9 mΩ at a gate-source voltage (V_GS) of 10V, ensuring efficient power handling with minimal losses.
4. Thermal Performance: The PowerPAK package helps in excellent heat dissipation, enhancing the device's reliability and performance under thermal stress.
5. Applications: Commonly used in DC-DC converters, power management systems, and load switching applications due to its efficiency and robust design.
These features make the SI4497DY-T1-GE3 a versatile choice for designers looking for efficient and reliable MOSFET solutions in compact applications.
1. Voltage & Current Ratings: This MOSFET has a drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of 12.8A, which makes it suitable for various low to medium power applications.
2. Package: It is housed in a PowerPAK SO-8 package, which is compact and provides efficient thermal performance.
3. R_DS(on): The device has a low on-resistance (R_DS(on)) of 6.9 mΩ at a gate-source voltage (V_GS) of 10V, ensuring efficient power handling with minimal losses.
4. Thermal Performance: The PowerPAK package helps in excellent heat dissipation, enhancing the device's reliability and performance under thermal stress.
5. Applications: Commonly used in DC-DC converters, power management systems, and load switching applications due to its efficiency and robust design.
These features make the SI4497DY-T1-GE3 a versatile choice for designers looking for efficient and reliable MOSFET solutions in compact applications.
Pinout
The SI4497DY-T1-GE3 is an N-channel MOSFET produced by Vishay Siliconix. It comes in a standard SO-8 package, which typically has 8 pins. This device is used for switching applications due to its low on-resistance and high-speed switching capabilities.
The primary functions of the SI4497DY-T1-GE3 include serving as a switch in power management applications, providing efficient power conversion, and functioning in load switching applications. It is commonly used in DC-DC converters, motor drives, and battery management systems.
Key characteristics of this MOSFET include a low gate threshold voltage and a high drain current capacity, making it suitable for handling significant power levels in compact designs. Additionally, its low on-resistance minimizes power loss, enhancing system efficiency.
The primary functions of the SI4497DY-T1-GE3 include serving as a switch in power management applications, providing efficient power conversion, and functioning in load switching applications. It is commonly used in DC-DC converters, motor drives, and battery management systems.
Key characteristics of this MOSFET include a low gate threshold voltage and a high drain current capacity, making it suitable for handling significant power levels in compact designs. Additionally, its low on-resistance minimizes power loss, enhancing system efficiency.
Manufacturer
The SI4497DY-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. The company provides a wide range of products, including diodes, MOSFETs, optoelectronics, resistors, inductors, and capacitors, which are used in various applications across different industries such as automotive, industrial, consumer electronics, telecommunications, computing, and military. Vishay is known for its comprehensive portfolio and its emphasis on innovation and quality in electronic component manufacturing.
Application
The SI4497DY-T1-GE3 is a N-channel MOSFET commonly used in various applications due to its low on-resistance and fast switching capabilities. Key application areas include:
1. Power Management: Used in DC-DC converters and power supply circuits for efficient power regulation.
2. Motor Control: Suitable for driving motors in applications like robotics and automotive systems.
3. Load Switching: Acts as a switch for managing loads in industrial and consumer electronics.
4. Battery Protection: Helps in managing charging and discharging cycles in battery-operated devices.
5. LED Drivers: Used in circuits that control LED lighting for improved energy efficiency.
These applications benefit from its compact size, efficiency, and reliability.
1. Power Management: Used in DC-DC converters and power supply circuits for efficient power regulation.
2. Motor Control: Suitable for driving motors in applications like robotics and automotive systems.
3. Load Switching: Acts as a switch for managing loads in industrial and consumer electronics.
4. Battery Protection: Helps in managing charging and discharging cycles in battery-operated devices.
5. LED Drivers: Used in circuits that control LED lighting for improved energy efficiency.
These applications benefit from its compact size, efficiency, and reliability.
Package
The SI4497DY-T1-GE3 is a MOSFET transistor packaged in a standard SO-8 (Small Outline 8-lead) package, which is commonly used for surface-mount applications.
