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SI7454DP-T1-E3
+БОМMOSFET N-CH 100V 5A PPAK SO-8
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ПроизводительVishay Силиконикс
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Мфр. Часть #SI7454DP-T1-E3
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В наличии18433
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Series | TrenchFET® |
| Part Status | Obsolete |
| Base Product Number | SI7454 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 7.8A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Vgs (Max) | ±20V |
| Power Dissipation (Max) | 1.9W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
| Package | PowerPAK® SO-8 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Обзор
Description
The SI7454DP-T1-E3 is a part of the Vishay Siliconix line of power MOSFETs. It is a N-channel MOSFET designed for use in high-efficiency power management applications. Key features include low on-resistance and fast switching capabilities, making it suitable for applications such as DC-DC converters, motor drives, and load switches. This device operates with a low gate charge, which enhances its efficiency and performance in high-frequency switching scenarios.
The SI7454DP-T1-E3 is typically available in a PowerPAK SO-8 package, which provides a compact size with excellent thermal performance, allowing for better heat dissipation in demanding applications. It is often used in environments where space and power efficiency are critical. The device is RoHS compliant, ensuring it meets environmental and safety standards.
In summary, the SI7454DP-T1-E3 is valued for its high performance in compact power electronic designs, providing efficient power conversion and management in various applications.
The SI7454DP-T1-E3 is typically available in a PowerPAK SO-8 package, which provides a compact size with excellent thermal performance, allowing for better heat dissipation in demanding applications. It is often used in environments where space and power efficiency are critical. The device is RoHS compliant, ensuring it meets environmental and safety standards.
In summary, the SI7454DP-T1-E3 is valued for its high performance in compact power electronic designs, providing efficient power conversion and management in various applications.
Equivalent
The SI7454DP-T1-E3 is a N-channel MOSFET. Equivalent products may include:
1. IRF530 - from International Rectifier
2. FQP30N06L - from Fairchild Semiconductor (now ON Semiconductor)
3. STP55NF06 - from STMicroelectronics
When seeking equivalents, ensure the replacements have similar specifications, such as voltage, current ratings, and package type. Always verify detailed datasheets to ensure full compatibility with your application.
1. IRF530 - from International Rectifier
2. FQP30N06L - from Fairchild Semiconductor (now ON Semiconductor)
3. STP55NF06 - from STMicroelectronics
When seeking equivalents, ensure the replacements have similar specifications, such as voltage, current ratings, and package type. Always verify detailed datasheets to ensure full compatibility with your application.
Features
The SI7454DP-T1-E3 is a type of power MOSFET produced by Vishay Siliconix. Key features of this component include:
1. N-Channel MOSFET: It is designed for switching applications.
2. Package: Comes in a PowerPAK SO-8 package, providing a compact surface-mount solution.
3. Voltage and Current Ratings: Typically features a high voltage rating, such as 40V, and can handle a significant amount of continuous drain current, often around 30A or higher depending on specific conditions.
4. Low On-Resistance: Offers low R_DS(on), which ensures efficient performance by minimizing energy losses during conduction.
5. Thermal Performance: The PowerPAK package provides enhanced thermal performance, crucial for high-power applications.
6. Applications: Suitable for use in DC-DC converters, power management, and various other high-speed switching applications.
These features make the SI7454DP-T1-E3 a reliable choice for engineers looking to design efficient power systems with minimal form factor constraints.
1. N-Channel MOSFET: It is designed for switching applications.
2. Package: Comes in a PowerPAK SO-8 package, providing a compact surface-mount solution.
3. Voltage and Current Ratings: Typically features a high voltage rating, such as 40V, and can handle a significant amount of continuous drain current, often around 30A or higher depending on specific conditions.
4. Low On-Resistance: Offers low R_DS(on), which ensures efficient performance by minimizing energy losses during conduction.
5. Thermal Performance: The PowerPAK package provides enhanced thermal performance, crucial for high-power applications.
6. Applications: Suitable for use in DC-DC converters, power management, and various other high-speed switching applications.
These features make the SI7454DP-T1-E3 a reliable choice for engineers looking to design efficient power systems with minimal form factor constraints.
Pinout
The SI7454DP-T1-E3 is a power MOSFET manufactured by Vishay Siliconix. It comes in an SO-8 package and is primarily used for switching applications in power management. The device features an N-channel MOSFET with a total of 8 pins.
Here is a brief overview of the pin functions:
1. Drain (D) - There are three pins (5, 6, 7, and 8) connected to the drain terminal.
2. Gate (G) - Pin 4 is connected to the gate terminal.
3. Source (S) - Pins 1, 2, and 3 are connected to the source terminal.
This MOSFET is typically used for applications requiring high-efficiency power conversion, such as in DC-DC converters and other high-speed switching applications. It operates with low on-resistance, which helps in reducing power loss and increasing efficiency.
Here is a brief overview of the pin functions:
1. Drain (D) - There are three pins (5, 6, 7, and 8) connected to the drain terminal.
2. Gate (G) - Pin 4 is connected to the gate terminal.
3. Source (S) - Pins 1, 2, and 3 are connected to the source terminal.
This MOSFET is typically used for applications requiring high-efficiency power conversion, such as in DC-DC converters and other high-speed switching applications. It operates with low on-resistance, which helps in reducing power loss and increasing efficiency.
Manufacturer
The SI7454DP-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962, the company is known for its extensive range of products, which include diodes, MOSFETs, optoelectronics, resistors, inductors, and capacitors. Vishay serves a wide array of markets, including automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical sectors. The company focuses on providing innovative solutions that enhance the performance and efficiency of electronic devices and systems.
Application
The SI7454DP-T1-E3 is a power MOSFET commonly used in applications such as power management systems, DC-DC converters, automotive electronic systems, and load switching. It is designed for high-efficiency power delivery in compact spaces, making it suitable for use in consumer electronics, industrial equipment, and other areas requiring efficient voltage regulation and high-current handling. Its fast switching capabilities also make it useful in motor control circuits and various types of power supply applications.
Package
The SI7454DP-T1-E3 is a power MOSFET in a DPAK (TO-252) package. This surface-mount package is designed for efficient thermal performance and is commonly used in power management applications.
