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SI7949DP-T1-E3
+БОМMOSFET 2P-CH 60V 3.2A PPAK SO-8
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ПроизводительVishay Силиконикс
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Мфр. Часть #SI7949DP-T1-E3
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Лист данных SI7949DP-T1-E3 DataSheet
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Пакет PowerPAK-SO-8
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В наличии5356
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Спецификации
| Атрибут | Ценность |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | 2 P-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 60V |
| Current-ContinuousDrain(Id)@25°C | 3.2A |
| RdsOn(Max)@IdVgs | 64mOhm @ 5A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 40nC @ 10V |
| Power-Max | 1.5W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | PowerPAK® SO-8 Dual |
Обзор
Description
Key applications for the SI7949DP-T1-E3 include DC-DC converters, load switching, and other power management systems where space and power efficiency are critical. It is designed to handle significant current levels and voltage, making it suitable for both consumer electronics and industrial applications.
This MOSFET is also RoHS compliant, ensuring it meets environmental standards for hazardous substances. Its specifications make it a versatile choice for engineers seeking reliable performance in demanding applications. Always refer to the manufacturer's datasheet for detailed electrical characteristics, thermal data, and application guidelines.
Equivalent
1. NXP PMPB60XN - A MOSFET with comparable voltage and current ratings.
2. Infineon BSC050N03LS - Offers similar features and performance metrics.
3. ON Semiconductor NTD65N03R - Another MOSFET with analogous specifications.
4. STMicroelectronics STS50NH3LL - Matches in terms of functionality and ratings.
When selecting an equivalent, always compare the datasheets to ensure compatibility with your specific application requirements.
Features
1. N-Channel MOSFET: This component is an N-channel MOSFET, which is typically used for high-speed switching and amplification.
2. Low On-Resistance: It features a low on-resistance, which minimizes power loss and enhances efficiency.
3. Package Type: It usually comes in a compact, surface-mount package, making it suitable for space-constrained applications.
4. Robust Performance: The design ensures reliable performance in various environmental conditions, which is crucial for industrial and consumer electronics.
5. Thermal Performance: Good thermal characteristics allow it to handle higher power levels effectively.
6. Applications: Commonly used in DC-DC converters, power management systems, and other high-frequency applications.
This MOSFET is valued for its durability, efficiency, and compact size, making it versatile for numerous electronic applications.
Pinout
The SI7949DP-T1-E3 has an 8-pin configuration, although some pins are internally connected as common points:
1. D1, D2, D3, D4 (Pins 1, 2, 3, 4): Drain
2. G (Pin 5): Gate
3. S (Pin 6): Source
4. S (Pin 7): Source (internally connected to Pin 6)
5. S (Pin 8): Source (internally connected to Pins 6 and 7)
The primary function of this MOSFET is as a switch or amplifier in electronic circuits. It features low on-resistance and is suitable for applications like DC-DC converters, load switches, and power management. Its design supports efficient thermal management, allowing for use in high-performance applications.