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SIS413DN-T1-GE3
+БОМMOSFET P-CH 30V 18A PPAK 1212-8
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ПроизводительVishay Силиконикс
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Мфр. Часть #SIS413DN-T1-GE3
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Лист данных SIS413DN-T1-GE3 DataSheet
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В наличии10641
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Supplier | Vishay Siliconix |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 18A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 9.4mOhm @ 15A, 10V |
| Vgs(th)(Max)@Id | 2.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 110 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 4280 pF @ 15 V |
| PowerDissipation(Max) | 3.7W (Ta), 52W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PowerPAK® 1212-8 |
Обзор
Description
The SIS413DN-T1-GE3 is likely a specific model or part number for an electronic component, such as a transistor, semiconductor, or integrated circuit. These identifiers are used by manufacturers to categorize and catalog their products. The "SIS" prefix might indicate the manufacturer or a specific series. The numbers and letters following this prefix usually provide details about the component's specifications, like voltage, current ratings, package type, or intended applications.
For a detailed introduction, one would typically refer to the product's datasheet, which offers comprehensive technical specifications, pin configurations, electrical characteristics, and application notes. This document is crucial for engineers and designers to understand how to integrate the component into their projects effectively.
If you are dealing with a specific application or need more detailed information about the SIS413DN-T1-GE3, consulting the manufacturer's website or technical support would be the best course of action to obtain the most accurate and up-to-date information.
For a detailed introduction, one would typically refer to the product's datasheet, which offers comprehensive technical specifications, pin configurations, electrical characteristics, and application notes. This document is crucial for engineers and designers to understand how to integrate the component into their projects effectively.
If you are dealing with a specific application or need more detailed information about the SIS413DN-T1-GE3, consulting the manufacturer's website or technical support would be the best course of action to obtain the most accurate and up-to-date information.
Equivalent
The SIS413DN-T1-GE3 is an N-channel MOSFET produced by Vishay Siliconix. Equivalent products from other manufacturers would be similar N-channel MOSFETs with comparable specifications such as voltage rating, current rating, and package type. Possible equivalents include:
1. IRF530N from Infineon Technologies
2. FDP6030BL from ON Semiconductor
3. FQP30N06L from ON Semiconductor
4. NTD5867NL from ON Semiconductor
Ensure to verify the datasheets for precise matching of specifications such as V_DS, I_D, R_DS(on), and package.
1. IRF530N from Infineon Technologies
2. FDP6030BL from ON Semiconductor
3. FQP30N06L from ON Semiconductor
4. NTD5867NL from ON Semiconductor
Ensure to verify the datasheets for precise matching of specifications such as V_DS, I_D, R_DS(on), and package.
Features
The SIS413DN-T1-GE3 is a N-channel MOSFET known for its efficient performance in switching applications. Here are some key features:
1. Voltage and Current Ratings: It operates with a drain-source voltage (V_DS) up to 30V and a continuous drain current (I_D) of 100A, making it suitable for high-power applications.
2. R_DS(on): The low on-resistance (R_DS(on)) ensures minimal power loss and efficient operation, critical for high-efficiency power systems.
3. Gate Charge: The device features a low gate charge, which translates to faster switching speeds and reduced energy consumption during switching.
4. Thermal Characteristics: It comes equipped with excellent thermal performance, enabling reliable operation under high power dissipation conditions.
5. Package Type: The MOSFET is available in a D²PAK (TO-263) package, providing a compact and surface-mountable solution that optimizes space on PCBs.
6. Applications: It is widely used in power management applications, including DC-DC converters, motor drives, and synchronous rectification in power supplies.
These features make the SIS413DN-T1-GE3 an ideal choice for applications requiring robust performance and high efficiency.
1. Voltage and Current Ratings: It operates with a drain-source voltage (V_DS) up to 30V and a continuous drain current (I_D) of 100A, making it suitable for high-power applications.
2. R_DS(on): The low on-resistance (R_DS(on)) ensures minimal power loss and efficient operation, critical for high-efficiency power systems.
3. Gate Charge: The device features a low gate charge, which translates to faster switching speeds and reduced energy consumption during switching.
4. Thermal Characteristics: It comes equipped with excellent thermal performance, enabling reliable operation under high power dissipation conditions.
5. Package Type: The MOSFET is available in a D²PAK (TO-263) package, providing a compact and surface-mountable solution that optimizes space on PCBs.
6. Applications: It is widely used in power management applications, including DC-DC converters, motor drives, and synchronous rectification in power supplies.
These features make the SIS413DN-T1-GE3 an ideal choice for applications requiring robust performance and high efficiency.
Pinout
The SIS413DN-T1-GE3 is a N-channel MOSFET manufactured by Vishay Siliconix. It is designed for use in low-voltage applications such as power management in portable and battery-powered devices.
The device comes in a PowerPAK® SO-8 package, which has a total of 8 pins. Here's a concise breakdown of its pin configuration and functions:
1. Pins 1, 2, 3 (Source - S): These pins are connected internally. They are the source terminals of the MOSFET.
2. Pin 4 (Gate - G): This pin is the gate terminal, which controls the MOSFET's switching operation.
3. Pins 5, 6, 7, 8 (Drain - D): These pins are connected internally. They serve as the drain terminals of the MOSFET.
The SIS413DN-T1-GE3 is typically used for efficient power switching and load management due to its low on-resistance and high current handling capacity.
The device comes in a PowerPAK® SO-8 package, which has a total of 8 pins. Here's a concise breakdown of its pin configuration and functions:
1. Pins 1, 2, 3 (Source - S): These pins are connected internally. They are the source terminals of the MOSFET.
2. Pin 4 (Gate - G): This pin is the gate terminal, which controls the MOSFET's switching operation.
3. Pins 5, 6, 7, 8 (Drain - D): These pins are connected internally. They serve as the drain terminals of the MOSFET.
The SIS413DN-T1-GE3 is typically used for efficient power switching and load management due to its low on-resistance and high current handling capacity.
Manufacturer
The SIS413DN-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962, the company has grown through acquisitions to become one of the largest suppliers in the electronics industry. Vishay’s products are used in a wide range of industries, including automotive, industrial, computing, consumer, telecommunications, power supplies, military, aerospace, and medical markets. The company is known for its innovation and quality in producing components such as diodes, MOSFETs, capacitors, resistors, and inductors. Their products are essential in both the construction of electronic devices and the regulation and control of electrical currents within those devices.
Application
The SIS413DN-T1-GE3 is a MOSFET typically used in power management applications. Its primary application areas include:
1. DC-DC Conversion: Utilized in voltage regulation and conversion processes.
2. Load Switches: Acts as a switch to control power to various components.
3. Battery Management: Employed in systems for efficient battery charging and discharging.
4. Motor Drives: Used in controlling the operation of small motors.
5. Power Supply Units: Integral to the functioning of power supplies for electronic devices.
6. LED Lighting: Helps in efficient power management for LED systems.
These applications leverage the MOSFET's efficiency, low on-resistance, and fast switching capabilities.
1. DC-DC Conversion: Utilized in voltage regulation and conversion processes.
2. Load Switches: Acts as a switch to control power to various components.
3. Battery Management: Employed in systems for efficient battery charging and discharging.
4. Motor Drives: Used in controlling the operation of small motors.
5. Power Supply Units: Integral to the functioning of power supplies for electronic devices.
6. LED Lighting: Helps in efficient power management for LED systems.
These applications leverage the MOSFET's efficiency, low on-resistance, and fast switching capabilities.
Package
The SIS413DN-T1-GE3 is a dual N-channel MOSFET housed in a PowerPAK® SO-8 package. This package type is known for providing low thermal resistance and efficient heat dissipation, making it suitable for applications requiring high power and compact design.
