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SSM3K339R
+БОМMOSFETs
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ПроизводительТошиба
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Мфр. Часть #SSM3K339R
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В наличии25836
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
Обзор
Description
This N-channel MOSFET is known for its compact SOT-23 package, making it suitable for space-constrained applications. It features a low on-resistance, which ensures efficient current flow and minimizes power loss, thus enhancing the performance of the device it is integrated into. The SSM3K339R is typically used in power management applications, load switches, and driver circuits.
Due to its robust design, the SSM3K339R can handle moderate levels of power, making it ideal for consumer electronics, automotive, and industrial applications where reliability and efficiency are crucial. Always refer to the specific datasheet from the manufacturer for detailed specifications and electrical characteristics to ensure it meets the requirements of your project.
Equivalent
1. 2N7002 series
2. BSS138
3. IRLML2502
4. PMV20XN
It's important to check the datasheets to ensure all specifications match your application requirements.
Features
1. Type: N-channel MOSFET.
2. Voltage Rating: It typically supports a drain-source voltage (V_DS) of 30V.
3. Current Rating: The maximum continuous drain current (I_D) is usually around 4.5A.
4. R_DS(on): It has a low on-resistance, typically around 40 mΩ at V_GS = 4.5V.
5. Package: The SSM3K339R is often available in a SOT-23 package, making it suitable for compact circuit designs.
6. Applications: It is widely used in power management, DC-DC converters, and switching applications.
7. Thermal Characteristics: Efficient thermal performance for reliable operation in various temperature conditions.
8. Switching Speed: Offers fast switching capabilities.
9. Gate Voltage: Operates optimally with a gate-source voltage (V_GS) of 2.5V to 4.5V.
These features make the SSM3K339R a versatile choice for designers needing efficient and compact power control solutions. Always refer to the manufacturer's datasheet for precise specifications.
Pinout
1. Gate (G): This pin is used to control the MOSFET. By applying voltage to the gate, the conductivity between the drain and source is regulated.
2. Drain (D): The drain is the terminal through which the charge carriers enter the MOSFET. It is connected to the load where the current flows out.
3. Source (S): The source is the terminal through which the charge carriers exit the MOSFET. It's commonly connected to ground in many applications.
The SSM3K339R is specifically designed for low-voltage applications, offering features like low ON-resistance and high-speed switching. It is utilized in various electronic devices for efficient power management and signal processing.