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STB15N80K5
+БОМMOSFET N CH 800V 14A D2PAK
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ПроизводительSTМикроэлектроника
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Мфр. Часть #STB15N80K5
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Лист данных STB15N80K5 DataSheet
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Пакет TO-263-3
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В наличии3105
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | SuperMESH5™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 800 V |
| Current-ContinuousDrain(Id)@25°C | 14A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 375mOhm @ 7A, 10V |
| Vgs(th)(Max)@Id | 5V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 32 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1100 pF @ 100 V |
| PowerDissipation(Max) | 190W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D²PAK (TO-263) |
Обзор
Description
The STB15N80K5 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance electronic applications. It is part of the MDmesh™ K5 series, known for its low on-resistance and high efficiency. The device is suitable for use in high-voltage applications and offers a drain-source voltage (V_DS) of 800V and a continuous drain current (I_D) of up to 15A.
Key features of the STB15N80K5 include fast switching speeds, low gate charge, and a robust avalanche performance. These attributes make it ideal for use in switching power supplies, motor drives, and power conversion systems where efficiency and reliability are critical. The device is encapsulated in a TO-220 package, which aids in efficient heat dissipation.
Overall, the STB15N80K5 offers a balance of performance, energy efficiency, and thermal management, making it a valuable component in high-voltage electronic circuits.
Key features of the STB15N80K5 include fast switching speeds, low gate charge, and a robust avalanche performance. These attributes make it ideal for use in switching power supplies, motor drives, and power conversion systems where efficiency and reliability are critical. The device is encapsulated in a TO-220 package, which aids in efficient heat dissipation.
Overall, the STB15N80K5 offers a balance of performance, energy efficiency, and thermal management, making it a valuable component in high-voltage electronic circuits.
Equivalent
The STB15N80K5 is a power MOSFET designed for high-voltage and high-current applications. Equivalent products may include:
1. IRFP460 by Infineon Technologies
2. STP10NK80ZFP by STMicroelectronics
3. FDPF12N80 by ON Semiconductor
4. IXFH32N80Q by IXYS
Ensure that the specifications such as voltage, current rating, and package type match your application's requirements before selecting an alternative. Always check the datasheets for compatibility.
1. IRFP460 by Infineon Technologies
2. STP10NK80ZFP by STMicroelectronics
3. FDPF12N80 by ON Semiconductor
4. IXFH32N80Q by IXYS
Ensure that the specifications such as voltage, current rating, and package type match your application's requirements before selecting an alternative. Always check the datasheets for compatibility.
Features
The STB15N80K5 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by STMicroelectronics. Key features include:
1. N-channel configuration: Ensures efficient high-speed switching and low on-state resistance, suitable for power applications.
2. Voltage and Current Ratings: It is capable of handling a drain-source voltage (V_DS) of up to 800V and a continuous drain current (I_D) of 15A, making it suitable for high-voltage applications.
3. Low On-State Resistance (R_DS(on)): Offers reduced static power loss, enhancing overall efficiency.
4. Planar Technology: Employs advanced planar technology for improved performance in linear mode and robust avalanche characteristics.
5. High Switching Speed: Designed to operate at high frequencies, which is ideal for various switching applications.
6. TO-220 Package: Comes in a TO-220 package, providing good thermal performance.
These features make the STB15N80K5 well-suited for applications in power supplies, motor control, and other high-efficiency power management systems.
1. N-channel configuration: Ensures efficient high-speed switching and low on-state resistance, suitable for power applications.
2. Voltage and Current Ratings: It is capable of handling a drain-source voltage (V_DS) of up to 800V and a continuous drain current (I_D) of 15A, making it suitable for high-voltage applications.
3. Low On-State Resistance (R_DS(on)): Offers reduced static power loss, enhancing overall efficiency.
4. Planar Technology: Employs advanced planar technology for improved performance in linear mode and robust avalanche characteristics.
5. High Switching Speed: Designed to operate at high frequencies, which is ideal for various switching applications.
6. TO-220 Package: Comes in a TO-220 package, providing good thermal performance.
These features make the STB15N80K5 well-suited for applications in power supplies, motor control, and other high-efficiency power management systems.
Pinout
The STB15N80K5 is an N-channel Power MOSFET manufactured by STMicroelectronics, primarily used for high-speed switching applications. It is part of the MDmesh™ K5 series, which is designed for efficiency in power conversion systems.
The device typically comes in a D²PAK package, which has three pins and a tab. Here is the pin configuration:
1. Gate (G): This pin controls the MOSFET's switching state. When a voltage is applied to the gate relative to the source, it allows current to flow from the drain to the source.
2. Drain (D): This pin is where the current enters the MOSFET. In the D²PAK package, the drain is also connected to the tab, which is used for heat dissipation.
3. Source (S): This pin is where the current exits the MOSFET.
The STB15N80K5 is designed for applications such as power supply, motor control, and other high-power systems, providing low on-resistance and fast switching characteristics.
The device typically comes in a D²PAK package, which has three pins and a tab. Here is the pin configuration:
1. Gate (G): This pin controls the MOSFET's switching state. When a voltage is applied to the gate relative to the source, it allows current to flow from the drain to the source.
2. Drain (D): This pin is where the current enters the MOSFET. In the D²PAK package, the drain is also connected to the tab, which is used for heat dissipation.
3. Source (S): This pin is where the current exits the MOSFET.
The STB15N80K5 is designed for applications such as power supply, motor control, and other high-power systems, providing low on-resistance and fast switching characteristics.
Manufacturer
The STB15N80K5 is manufactured by STMicroelectronics. STMicroelectronics is a multinational electronics and semiconductor manufacturer headquartered in Geneva, Switzerland. It is a leading company in the semiconductor industry, known for designing, developing, manufacturing, and marketing a wide range of semiconductor products, including integrated circuits, discrete semiconductors, and MEMS (Micro-Electro-Mechanical Systems) devices. STMicroelectronics serves various sectors such as automotive, industrial, personal electronics, communication equipment, and computer peripherals. As a key player in the technology sector, the company focuses on innovation and sustainability, producing components essential for electronic devices used in everyday life.
Application
The STB15N80K5 is a power MOSFET designed for high-efficiency applications. Its primary application areas include:
1. Switching Power Supplies: Used in SMPS for improved power efficiency.
2. Motor Control: Suitable for driving motors in industrial and automotive applications.
3. Lighting Systems: Utilized in LED lighting for efficient power management.
4. Inverters: Employed in DC-AC inverters for renewable energy systems.
5. Telecommunications: Powers RF amplifiers and other telecom devices.
6. Consumer Electronics: Found in various electronic devices requiring efficient power handling.
These applications leverage the MOSFET’s high voltage capacity, fast switching speed, and low on-resistance.
1. Switching Power Supplies: Used in SMPS for improved power efficiency.
2. Motor Control: Suitable for driving motors in industrial and automotive applications.
3. Lighting Systems: Utilized in LED lighting for efficient power management.
4. Inverters: Employed in DC-AC inverters for renewable energy systems.
5. Telecommunications: Powers RF amplifiers and other telecom devices.
6. Consumer Electronics: Found in various electronic devices requiring efficient power handling.
These applications leverage the MOSFET’s high voltage capacity, fast switching speed, and low on-resistance.
Package
The STB15N80K5 is a power MOSFET with an N-channel, typically used for high-voltage applications. It is packaged in a D2PAK (TO-263) surface-mount format, which is suitable for power applications requiring efficient heat dissipation.
