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STB28NM50N
+БОМMOSFET N-CH 500V 21A D2PAK
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ПроизводительSTМикроэлектроника
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Мфр. Часть #STB28NM50N
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Лист данных STB28NM50N DataSheet
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Пакет TO-263-3
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В наличии6275
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | MDmesh™ II |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 500 V |
| Current-ContinuousDrain(Id)@25°C | 21A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 158mOhm @ 10.5A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 50 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 1735 pF @ 25 V |
| PowerDissipation(Max) | 150W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D2PAK |
Обзор
Description
Key features include a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) of 28A. It has a low on-resistance (R_DS(on)), which minimizes power losses and improves efficiency. The STB28NM50N is typically packaged in a TO-220 form factor, which allows for efficient heat dissipation.
Its robust design, high breakdown voltage, and fast switching capabilities make it ideal for use in various industrial and consumer electronic devices. Additionally, it offers good thermal performance and is designed to withstand rugged operating conditions, ensuring reliable operation over its lifespan.
Equivalent
Features
1. Voltage Rating: It has a Drain-Source Voltage (V_DS) of 500V, making it suitable for high-voltage applications.
2. Current Rating: It can handle a continuous Drain Current (I_D) of up to 28A at 25°C.
3. R_DS(on): The on-state resistance is low, typically around 0.135 ohms, minimizing power losses during operation.
4. Package Type: It is available in a D²PAK package, facilitating efficient thermal management and ease of mounting.
5. Technology: Utilizes STMicroelectronics' MDmesh technology, which offers improved performance in terms of switching speeds and reduction of gate charge.
6. Applications: Suitable for use in switch-mode power supplies, DC-DC converters, and other industrial power systems.
7. Thermal Performance: Designed for effective heat dissipation, ensuring reliable operation even under high-load conditions.
These features make the STB28NM50N a versatile choice for engineers working on high-efficiency power conversion projects.
Pinout
- Pin Count: The STB28NM50N in the D2PAK package typically has 3 pins and a tab.
1. Gate (G): This pin is used for controlling the MOSFET. A voltage applied here allows current to flow between the drain and source.
2. Drain (D): This pin is the terminal where the load current enters the MOSFET.
3. Source (S): This pin is the terminal where the load current exits the MOSFET.
4. Tab: Often connected to the drain, it aids in heat dissipation.
- Function: The STB28NM50N is designed for high-speed switching and high-voltage applications (up to 500V). It features low on-state resistance and high current handling capability, making it suitable for efficient power management in various electronic circuits.
Manufacturer
Application
1. Power Supply Units: Used in power conversion and management circuits due to its high-speed switching capabilities.
2. Motor Control: Ideal for driving motors in industrial and automotive applications because of its efficient load handling.
3. Telecommunications: Utilized in infrastructure equipment for signal processing and power regulation.
4. Consumer Electronics: Applied in devices like TVs and PCs for efficient power management.
5. Industrial Automation: Used in control systems for its robust performance and reliability.
These applications benefit from the MOSFET's low on-resistance and high breakdown voltage characteristics.