STB28NM50N

Изображения являются только для ссылки

STB28NM50N

+БОМ

MOSFET N-CH 500V 21A D2PAK

  • ПроизводительSTМикроэлектроника

  • Мфр. Часть #STB28NM50N

  • Лист данных STB28NM50N DataSheet

  • Пакет TO-263-3

  • В наличии6275

365 Дни гарантии качества

7*24 часы обслуживания каранти

90-гарантия послепродажного дня

Гарантия подлинного продукта

Спецификации

Атрибут Ценность
Package Tape & Reel (TR),Cut Tape (CT)
Series MDmesh™ II
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 500 V
Current-ContinuousDrain(Id)@25°C 21A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 158mOhm @ 10.5A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 50 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 1735 pF @ 25 V
PowerDissipation(Max) 150W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D2PAK

Обзор

Description

The STB28NM50N is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic applications for switching and amplification purposes. It is part of STMicroelectronics' MDmesh™ series, which is known for its high-speed and energy-efficient performance. The device can handle high voltages and currents, making it suitable for power supply, motor control, and other high-power applications.
Key features include a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) of 28A. It has a low on-resistance (R_DS(on)), which minimizes power losses and improves efficiency. The STB28NM50N is typically packaged in a TO-220 form factor, which allows for efficient heat dissipation.
Its robust design, high breakdown voltage, and fast switching capabilities make it ideal for use in various industrial and consumer electronic devices. Additionally, it offers good thermal performance and is designed to withstand rugged operating conditions, ensuring reliable operation over its lifespan.

Equivalent

The STB28NM50N is an N-channel MOSFET. Equivalent products include the IRF540N, FQP30N06L, and the FDPF7N50U. While these are similar in function, always check specific electrical characteristics and thermal management requirements to ensure compatibility with your application.

Features

The STB28NM50N is a N-channel Power MOSFET designed for high efficiency and reliability in power applications. Key features include:
1. Voltage Rating: It has a Drain-Source Voltage (V_DS) of 500V, making it suitable for high-voltage applications.
2. Current Rating: It can handle a continuous Drain Current (I_D) of up to 28A at 25°C.
3. R_DS(on): The on-state resistance is low, typically around 0.135 ohms, minimizing power losses during operation.
4. Package Type: It is available in a D²PAK package, facilitating efficient thermal management and ease of mounting.
5. Technology: Utilizes STMicroelectronics' MDmesh technology, which offers improved performance in terms of switching speeds and reduction of gate charge.
6. Applications: Suitable for use in switch-mode power supplies, DC-DC converters, and other industrial power systems.
7. Thermal Performance: Designed for effective heat dissipation, ensuring reliable operation even under high-load conditions.
These features make the STB28NM50N a versatile choice for engineers working on high-efficiency power conversion projects.

Pinout

The STB28NM50N is a power MOSFET manufactured by STMicroelectronics. This component is typically used in high-efficiency power conversion applications, such as power supplies and converters. The STB28NM50N comes in a D2PAK package and features the following:
- Pin Count: The STB28NM50N in the D2PAK package typically has 3 pins and a tab.
1. Gate (G): This pin is used for controlling the MOSFET. A voltage applied here allows current to flow between the drain and source.
2. Drain (D): This pin is the terminal where the load current enters the MOSFET.
3. Source (S): This pin is the terminal where the load current exits the MOSFET.
4. Tab: Often connected to the drain, it aids in heat dissipation.
- Function: The STB28NM50N is designed for high-speed switching and high-voltage applications (up to 500V). It features low on-state resistance and high current handling capability, making it suitable for efficient power management in various electronic circuits.

Manufacturer

The STB28NM50N is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products. It is headquartered in Geneva, Switzerland, and serves various industries, including automotive, industrial, personal electronics, and communications equipment. As a major player in the semiconductor industry, STMicroelectronics is known for its innovation and development of integrated circuits and discrete devices.

Application

The STB28NM50N is an N-channel MOSFET primarily used in applications requiring high efficiency and performance. Its main application areas include:
1. Power Supply Units: Used in power conversion and management circuits due to its high-speed switching capabilities.
2. Motor Control: Ideal for driving motors in industrial and automotive applications because of its efficient load handling.
3. Telecommunications: Utilized in infrastructure equipment for signal processing and power regulation.
4. Consumer Electronics: Applied in devices like TVs and PCs for efficient power management.
5. Industrial Automation: Used in control systems for its robust performance and reliability.
These applications benefit from the MOSFET's low on-resistance and high breakdown voltage characteristics.

Package

The STB28NM50N is a MOSFET transistor packaged in a D²PAK (TO-263) package. This surface-mount package is designed for high-power applications and provides efficient thermal performance.

Продукты, связанные с STB28NM50N