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STD120N4F6
+БОМMOSFET N-CH 40V 80A DPAK
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ПроизводительSTМикроэлектроника
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Мфр. Часть #STD120N4F6
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Лист данных STD120N4F6 DataSheet
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В наличии13306
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Спецификации
| Атрибут | Ценность |
| Supplier | STMicroelectronics |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101, DeepGATE™, STripFET™ VI |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 40 V |
| Current-ContinuousDrain(Id)@25°C | 80A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 4mOhm @ 40A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 65 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 3850 pF @ 25 V |
| PowerDissipation(Max) | 110W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DPAK |
Обзор
Description
The STD120N4F6 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for a variety of applications, including power management and electronic switching. It is manufactured by STMicroelectronics and is part of their STripFET F6 series, which is known for high efficiency and performance in power conversion tasks.
Key features of the STD120N4F6 include:
1. Voltage & Current Ratings: It typically supports a drain-source voltage (V_DS) of around 40V and a continuous drain current (I_D) of up to 120A, making it suitable for high-power applications.
2. Low On-Resistance: The MOSFET offers low R_DS(on), reducing power losses and improving efficiency in power supply designs.
3. Package: It usually comes in a DPAK package, which is a surface-mount package suitable for compact designs.
4. Applications: It is commonly used in automotive applications, DC-DC converters, motor drives, and other high-efficiency power management systems.
Overall, the STD120N4F6 is valued for its robust performance, making it a reliable choice in demanding electronic environments.
Key features of the STD120N4F6 include:
1. Voltage & Current Ratings: It typically supports a drain-source voltage (V_DS) of around 40V and a continuous drain current (I_D) of up to 120A, making it suitable for high-power applications.
2. Low On-Resistance: The MOSFET offers low R_DS(on), reducing power losses and improving efficiency in power supply designs.
3. Package: It usually comes in a DPAK package, which is a surface-mount package suitable for compact designs.
4. Applications: It is commonly used in automotive applications, DC-DC converters, motor drives, and other high-efficiency power management systems.
Overall, the STD120N4F6 is valued for its robust performance, making it a reliable choice in demanding electronic environments.
Equivalent
The STD120N4F6 is an N-channel MOSFET from STMicroelectronics. Equivalent products may include:
1. IRFR120N (Infineon)
2. FDD120N15 (ON Semiconductor)
3. NTB125N02R (ON Semiconductor)
4. RFP70N06 (Vishay)
5. FDP047N10 (Fairchild Semiconductor)
These equivalents may vary slightly in specifications, so always compare parameters like voltage, current, Rds(on), and package to ensure compatibility with your application.
1. IRFR120N (Infineon)
2. FDD120N15 (ON Semiconductor)
3. NTB125N02R (ON Semiconductor)
4. RFP70N06 (Vishay)
5. FDP047N10 (Fairchild Semiconductor)
These equivalents may vary slightly in specifications, so always compare parameters like voltage, current, Rds(on), and package to ensure compatibility with your application.
Features
The STD120N4F6 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) featuring several key attributes that make it suitable for various applications:
1. N-channel MOSFET: It is designed for high-efficiency power switching.
2. Voltage and Current Rating: It typically supports a drain-source voltage of 40V and a continuous drain current of 120A.
3. Low On-resistance: The device offers low R_DS(on), which helps to minimize power losses and improve efficiency.
4. Technology: Utilizes STripFET F6 technology, enhancing performance and reducing gate charge.
5. Package: Commonly available in a DPAK or D2PAK package, allowing for efficient heat dissipation and compact design.
6. Applications: Suitable for use in automotive, industrial, and consumer electronics where high power efficiency is necessary.
7. Temperature Performance: Operates effectively over a wide range of temperatures, enhancing reliability in various environments.
These features make the STD120N4F6 an ideal choice for applications requiring efficient and reliable power management solutions.
1. N-channel MOSFET: It is designed for high-efficiency power switching.
2. Voltage and Current Rating: It typically supports a drain-source voltage of 40V and a continuous drain current of 120A.
3. Low On-resistance: The device offers low R_DS(on), which helps to minimize power losses and improve efficiency.
4. Technology: Utilizes STripFET F6 technology, enhancing performance and reducing gate charge.
5. Package: Commonly available in a DPAK or D2PAK package, allowing for efficient heat dissipation and compact design.
6. Applications: Suitable for use in automotive, industrial, and consumer electronics where high power efficiency is necessary.
7. Temperature Performance: Operates effectively over a wide range of temperatures, enhancing reliability in various environments.
These features make the STD120N4F6 an ideal choice for applications requiring efficient and reliable power management solutions.
Pinout
The STD120N4F6 is a N-channel MOSFET from STMicroelectronics. It typically comes in a DPAK (TO-252) package. The device has three pins plus the tab, which acts as a fourth connection point. Here are the pin functions:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage here allows current to flow between the drain and source.
2. Drain (D): Current flows into the drain from the external circuit.
3. Source (S): Current flows out from the source to the external circuit.
4. Tab (connected to Drain): The metal tab is internally connected to the drain and helps in heat dissipation.
This MOSFET is designed for high efficiency and low on-resistance, making it suitable for various power applications. Please refer to the specific datasheet for detailed electrical characteristics and application guidelines.
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage here allows current to flow between the drain and source.
2. Drain (D): Current flows into the drain from the external circuit.
3. Source (S): Current flows out from the source to the external circuit.
4. Tab (connected to Drain): The metal tab is internally connected to the drain and helps in heat dissipation.
This MOSFET is designed for high efficiency and low on-resistance, making it suitable for various power applications. Please refer to the specific datasheet for detailed electrical characteristics and application guidelines.
Manufacturer
The STD120N4F6 is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a broad range of semiconductor products. The company is known for producing integrated circuits and discrete devices that are used in a variety of applications, including automotive, industrial, personal electronics, and communications equipment.
Established in 1987 from the merger of Italian and French semiconductor companies, STMicroelectronics has become one of the world's leading semiconductor manufacturers. The company operates in multiple countries and serves a diverse customer base across different technology sectors. With a focus on innovation and sustainable technology solutions, STMicroelectronics invests heavily in research and development to stay at the forefront of semiconductor technology.
Established in 1987 from the merger of Italian and French semiconductor companies, STMicroelectronics has become one of the world's leading semiconductor manufacturers. The company operates in multiple countries and serves a diverse customer base across different technology sectors. With a focus on innovation and sustainable technology solutions, STMicroelectronics invests heavily in research and development to stay at the forefront of semiconductor technology.
Application
The STD120N4F6 is a power MOSFET typically used in applications requiring high efficiency and fast switching. Its primary application areas include:
1. Power Supply Units: Used in switch-mode power supplies (SMPS) for efficient power conversion.
2. Motor Control: Suitable for driving motors in industrial and consumer applications due to its ability to handle high current loads.
3. DC-DC Converters: Employed in voltage regulation and conversion processes in various electronic devices.
4. Automotive Applications: Used in automotive electronics for efficient power management and control systems.
5. Inverters: Applicable in renewable energy systems for converting DC to AC power.
Overall, its robust design and efficiency make it suitable for high-performance electronic applications.
1. Power Supply Units: Used in switch-mode power supplies (SMPS) for efficient power conversion.
2. Motor Control: Suitable for driving motors in industrial and consumer applications due to its ability to handle high current loads.
3. DC-DC Converters: Employed in voltage regulation and conversion processes in various electronic devices.
4. Automotive Applications: Used in automotive electronics for efficient power management and control systems.
5. Inverters: Applicable in renewable energy systems for converting DC to AC power.
Overall, its robust design and efficiency make it suitable for high-performance electronic applications.
Package
The STD120N4F6 is a power MOSFET, and its package type is DPAK (TO-252), which is a surface-mount package commonly used for medium power applications.
