STD65N55F3

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STD65N55F3

+БОМ

MOSFET N-CH 55V 80A DPAK

  • ПроизводительSTМикроэлектроника

  • Мфр. Часть #STD65N55F3

  • Лист данных STD65N55F3 DataSheet

  • Пакет TO-252-3

  • В наличии4296

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Спецификации

Атрибут Ценность
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series STripFET™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain(Id) @ 25°C 80A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 8.5mOhm @ 32A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 45 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 2200 pF @ 25 V
Power Dissipation (Max) 110W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK

Обзор

Description

The STD65N55F3 is an N-channel MOSFET from STMicroelectronics, designed for high-efficiency power applications. Key features include:
- Voltage Rating: 55V
- Current Capacity: 65A (continuous)
- Low On-Resistance: 9.5 mΩ (max) at 10V VGS
- Fast Switching: Optimized for high-frequency operations (e.g., DC-DC converters, motor drives).
- Package: TO-252 (DPAK), offering good thermal performance.
It is commonly used in switching power supplies, automotive systems, and industrial controls due to its robustness and low power dissipation. The device includes built-in protection against overcurrent and thermal overload.
For detailed specs, refer to the datasheet on ST’s website.

Equivalent

Equivalent products to the STD65N55F3 (55V, 65A N-channel MOSFET) include:
- IRF3205 (55V, 110A)
- IPP055N04N (40V, 100A)
- STP60NF06 (60V, 60A)
- FDP047N10 (100V, 75A)
Check voltage/current ratings and package compatibility before substitution.

Features

The STD65N55F3 is an N-channel MOSFET with the following key features:
- Voltage Rating: 55V drain-source voltage (VDSS).
- Current Rating: 65A continuous drain current (ID).
- Low On-Resistance: 8.5mΩ (max) at VGS = 10V, reducing conduction losses.
- Fast Switching: Optimized for high-speed applications.
- Low Gate Charge (QG): Enhances efficiency in switching circuits.
- Avalanche Energy Rated: Robust against inductive load spikes.
- Package: TO-252 (DPAK), suitable for power management in compact designs.
Ideal for DC-DC converters, motor control, and power switching in automotive/industrial systems.

Pinout

The STD65N55F3 is a N-channel MOSFET in a TO-252 (DPAK) package with 3 pins:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high-voltage side).
3. Source (S) – Connects to ground (low-voltage side).
Key Features:
- Voltage Rating: 55V
- Current Rating: 65A
- Low On-Resistance (RDS(on)): ~5.5mΩ (typical)
- Application: Power switching in DC-DC converters, motor drives, and power supplies.
The TO-252 package is surface-mountable with a metal tab for heat dissipation.

Manufacturer

The STD65N55F3 is a power MOSFET manufactured by STMicroelectronics, a leading global semiconductor company based in Switzerland.
STMicroelectronics specializes in designing and producing a wide range of semiconductor solutions, including microcontrollers, sensors, power devices, and analog ICs, serving industries like automotive, industrial, consumer electronics, and IoT.
The STD65N55F3 is part of their MDmesh™ series, optimized for high-efficiency power conversion applications. The company is known for innovation in energy-efficient and high-performance electronic components.

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