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STGW60V60DF
+БОМIGBT 600V 80A 375W TO247
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ПроизводительSTМикроэлектроника
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Мфр. Часть #STGW60V60DF
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Лист данных STGW60V60DF DataSheet
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Пакет TO-247
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В наличии4362
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package | Tube |
| ProductStatus | Active |
| IGBTType | Trench Field Stop |
| Voltage-CollectorEmitterBreakdown(Max) | 600 V |
| Current-Collector(Ic)(Max) | 80 A |
| Current-CollectorPulsed(Icm) | 240 A |
| Vce(on)(Max)@VgeIc | 2.3V @ 15V, 60A |
| Power-Max | 375 W |
| SwitchingEnergy | 750µJ (on), 550µJ (off) |
| InputType | Standard |
| GateCharge | 334 nC |
| Td(on/off)@25°C | 60ns/208ns |
| TestCondition | 400V, 60A, 4.7Ohm, 15V |
| ReverseRecoveryTime(trr) | 74 ns |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-247-3 |
Обзор
Description
The STGW60V60DF is a high-performance insulated gate bipolar transistor (IGBT) produced by STMicroelectronics. It is designed for use in power management and switching applications, particularly in environments that require high efficiency and reliability. The device features a voltage rating of 600V and a continuous collector current rating of 60A, making it suitable for a wide range of industrial and consumer electronics.
Key features of the STGW60V60DF include low on-state voltage drop, which enhances efficiency by reducing power loss during operation. It also offers fast switching speeds, contributing to its suitability for high-frequency applications. The IGBT is equipped with a diode for freewheeling operations, which helps in managing inductive loads effectively.
This component is commonly used in motor drives, inverters, and other applications requiring robust power handling capabilities. Its compact and efficient design makes it a reliable choice for engineers and manufacturers who need to balance performance, energy efficiency, and size constraints in their projects.
Key features of the STGW60V60DF include low on-state voltage drop, which enhances efficiency by reducing power loss during operation. It also offers fast switching speeds, contributing to its suitability for high-frequency applications. The IGBT is equipped with a diode for freewheeling operations, which helps in managing inductive loads effectively.
This component is commonly used in motor drives, inverters, and other applications requiring robust power handling capabilities. Its compact and efficient design makes it a reliable choice for engineers and manufacturers who need to balance performance, energy efficiency, and size constraints in their projects.
Equivalent
The STGW60V60DF is a 600V, 60A, IGBT transistor. Equivalent products may include:
1. Infineon IKW50N60H3 - 600V, 50A IGBT.
2. Fairchild (ON Semiconductor) FGA60N60SMD - 600V, 60A IGBT.
3. Vishay IRG4PH60UDPbF - 600V, 57A IGBT.
4. Fuji Electric 6MBP50RA120-01 - 600V, 50A IGBT.
Always check electrical specifications and application requirements to ensure compatibility.
1. Infineon IKW50N60H3 - 600V, 50A IGBT.
2. Fairchild (ON Semiconductor) FGA60N60SMD - 600V, 60A IGBT.
3. Vishay IRG4PH60UDPbF - 600V, 57A IGBT.
4. Fuji Electric 6MBP50RA120-01 - 600V, 50A IGBT.
Always check electrical specifications and application requirements to ensure compatibility.
Features
The STGW60V60DF is an Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It is designed for use in high-efficiency power switching applications. Key features of the STGW60V60DF include:
1. Voltage Rating: It is rated for a collector-emitter voltage of 600V, making it suitable for medium to high voltage applications.
2. Current Rating: The device can handle a continuous collector current of up to 60A at 25°C.
3. Low On-State Voltage Drop: It offers a low on-state voltage drop, which enhances efficiency by reducing power losses during operation.
4. Fast Switching: The IGBT is designed for fast switching speeds, which helps in improving overall system performance in applications like inverters and motor drives.
5. Built-in Diode: It includes a freewheeling diode, which aids in protecting the circuit from inductive voltage spikes.
6. High Temperature Operation: The device is capable of operating at high junction temperatures, allowing for use in demanding environments.
7. Applications: It is typically used in industrial applications, including motor drives, power converters, and welding equipment.
These features make the STGW60V60DF a versatile component for various power electronic applications.
1. Voltage Rating: It is rated for a collector-emitter voltage of 600V, making it suitable for medium to high voltage applications.
2. Current Rating: The device can handle a continuous collector current of up to 60A at 25°C.
3. Low On-State Voltage Drop: It offers a low on-state voltage drop, which enhances efficiency by reducing power losses during operation.
4. Fast Switching: The IGBT is designed for fast switching speeds, which helps in improving overall system performance in applications like inverters and motor drives.
5. Built-in Diode: It includes a freewheeling diode, which aids in protecting the circuit from inductive voltage spikes.
6. High Temperature Operation: The device is capable of operating at high junction temperatures, allowing for use in demanding environments.
7. Applications: It is typically used in industrial applications, including motor drives, power converters, and welding equipment.
These features make the STGW60V60DF a versatile component for various power electronic applications.
Pinout
The STGW60V60DF is a Insulated Gate Bipolar Transistor (IGBT) designed for switching applications. This specific model is produced by STMicroelectronics. The STGW60V60DF is typically available in a TO-247 package, which generally features three pins.
The pin functions are as follows:
1. Collector (C): This pin is the terminal through which the main current flows into the IGBT. It is the equivalent of the "drain" in a MOSFET.
2. Gate (G): This is the control terminal of the IGBT, which modulates the conductivity between the collector and the emitter. It is equivalent to the "gate" in a MOSFET.
3. Emitter (E): This pin is the terminal through which current flows out of the IGBT. It is the equivalent of the "source" in a MOSFET.
The STGW60V60DF is designed for high-speed switching, suitable for a variety of applications, including inverters and power supplies.
The pin functions are as follows:
1. Collector (C): This pin is the terminal through which the main current flows into the IGBT. It is the equivalent of the "drain" in a MOSFET.
2. Gate (G): This is the control terminal of the IGBT, which modulates the conductivity between the collector and the emitter. It is equivalent to the "gate" in a MOSFET.
3. Emitter (E): This pin is the terminal through which current flows out of the IGBT. It is the equivalent of the "source" in a MOSFET.
The STGW60V60DF is designed for high-speed switching, suitable for a variety of applications, including inverters and power supplies.
Manufacturer
The STGW60V60DF is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products used in various electronic applications. The company caters to multiple industries, including automotive, industrial, personal electronics, and communications equipment. STMicroelectronics is known for its focus on innovation and sustainability, developing solutions that address energy efficiency, smart technology, and connectivity needs.
Application
The STGW60V60DF is an IGBT (Insulated Gate Bipolar Transistor) used primarily in high-power and high-efficiency applications. Key application areas include motor drives for industrial automation, power converters, and inverters for renewable energy systems like solar and wind. It is also utilized in uninterruptible power supplies (UPS) and as a component in power management systems in various electrical and electronic equipment. Its high voltage and current handling capabilities make it suitable for applications requiring fast switching and high efficiency.
Package
The STGW60V60DF is an IGBT (Insulated Gate Bipolar Transistor) with a D²PAK package type. It is designed for high efficiency and fast switching applications. The package provides a compact and efficient solution for mounting on PCBs.
