STGWA80H65DFB

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STGWA80H65DFB

+БОМ

IGBT BIPO 650V 80A TO247-3

  • ПроизводительSTМикроэлектроника

  • Мфр. Часть #STGWA80H65DFB

  • Пакет TO-247-3

  • В наличии3582

365 Дни гарантии качества

7*24 часы обслуживания каранти

90-гарантия послепродажного дня

Гарантия подлинного продукта

Спецификации

Атрибут Ценность
Package / Case Tube
Part Status Obsolete
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown(Max) 650 V
Current - Collector(Ic)(Max) 120 A
Current - Collector Pulsed(Icm) 240 A
Vce(on)(Max) @ Vge Ic 2V @ 15V, 80A
Power - Max 469 W
Switching Energy 2.1mJ (on), 1.5mJ (off)
Input Type Standard
Gate Charge 414 nC
Td(on / off) @ 25°C 84ns/280ns
Test Condition 400V, 80A, 10Ohm, 15V
Reverse Recovery Time (trr) 85 ns
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole

Обзор

Description

The STGWA80H65DFB is a high-performance 650V, 80A IGBT (Insulated Gate Bipolar Transistor) from STMicroelectronics, designed for power switching applications. It features:
- Low VCE(sat) for reduced conduction losses.
- Fast switching for improved efficiency in high-frequency circuits.
- High ruggedness with short-circuit capability (5µs).
- Co-packaged anti-parallel diode for simplified design in inverter/rectifier applications.
Ideal for motor drives, UPS systems, and industrial inverters, it operates in a TO-247 package for robust thermal performance. Its Tj(max) of 175°C ensures reliability under demanding conditions.
For detailed specs, refer to the datasheet.

Pinout

The STGWA80H65DFB is a 65A, 650V IGBT module with a built-in anti-parallel diode.
- Pin Count: 25 pins (standard for a 6-pack IGBT module).
- Functions:
- Contains three half-bridge IGBTs (each with a freewheeling diode).
- Designed for motor drives, inverters, and industrial applications.
- Features low VCE(sat) and high switching efficiency.
- Includes gate driver connections, emitter sense pins, and thermal monitoring.
Key terminals: Gate (Gx), Collector (Cx), Emitter (Ex), and auxiliary pins for control.

Manufacturer

The STGWA80H65DFB is manufactured by STMicroelectronics, a leading global semiconductor company.
STMicroelectronics specializes in designing and producing a wide range of semiconductor products, including power devices, microcontrollers, sensors, and analog ICs. The company serves industries such as automotive, industrial, consumer electronics, and IoT.
The STGWA80H65DFB is a 650V, 80A IGBT with a fast-switching diode, commonly used in high-efficiency power applications like motor drives and inverters.
STMicroelectronics is known for innovation, reliability, and energy-efficient solutions.

Application

The STGWA80H65DFB is a high-power IGBT module primarily used in:
- Motor Drives: Industrial and automotive applications.
- Power Supplies: High-efficiency switched-mode power supplies (SMPS).
- Renewable Energy: Inverters for solar and wind power systems.
- Welding Equipment: High-current welding machines.
- Induction Heating: Industrial heating systems.
Its 650V/80A rating and low switching losses make it suitable for high-performance, energy-efficient applications requiring robust power handling.

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