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STP150N10F7
+БОМMOSFET N-CH 100V 110A TO220
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ПроизводительSTМикроэлектроника
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Мфр. Часть #STP150N10F7
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Лист данных STP150N10F7 DataSheet
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В наличии3491
365 Дни гарантии качества
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90-гарантия послепродажного дня
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Спецификации
| Атрибут | Ценность |
| Series | DeepGATE™, STripFET™ VII |
| Part Status | Active |
| Base Product Number | STP150 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 55A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 117 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 8115 pF @ 50 V |
| Power Dissipation (Max) | 250W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
| Package | TO-220-3 |
| Packaging | Tube |
Обзор
Description
The STP150N10F7 is a N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power switching applications. Manufactured by STMicroelectronics, it belongs to the STripFET F7 series, known for its low on-resistance and high-speed switching capabilities. The device can handle a maximum continuous drain current of 150A and a maximum drain-source voltage (V_DS) of 100V.
Key features include low gate charge and low on-state resistance (R_DS(on)), which contribute to reduced power loss and improved efficiency in applications such as DC-DC converters, motor drives, and power management systems. The STP150N10F7 is typically housed in a TO-220 package, providing good thermal performance and ease of mounting, which is essential for high-power applications.
Overall, the STP150N10F7 is well-suited for use in environments where high efficiency, reliability, and compact design are critical, making it a popular choice for both industrial and consumer electronics.
Key features include low gate charge and low on-state resistance (R_DS(on)), which contribute to reduced power loss and improved efficiency in applications such as DC-DC converters, motor drives, and power management systems. The STP150N10F7 is typically housed in a TO-220 package, providing good thermal performance and ease of mounting, which is essential for high-power applications.
Overall, the STP150N10F7 is well-suited for use in environments where high efficiency, reliability, and compact design are critical, making it a popular choice for both industrial and consumer electronics.
Equivalent
The STP150N10F7 is an N-channel MOSFET. Equivalent products might include:
1. IRFP150N - Offers similar voltage and current ratings.
2. FQP65N10 - Another N-channel MOSFET with comparable specifications.
3. IPP110N10N3 - Provides similar functionality with slight variations in parameters.
4. NTMFS5C604NL - A newer model with equivalent electrical characteristics.
Always check the datasheets for exact specifications to ensure compatibility with your application.
1. IRFP150N - Offers similar voltage and current ratings.
2. FQP65N10 - Another N-channel MOSFET with comparable specifications.
3. IPP110N10N3 - Provides similar functionality with slight variations in parameters.
4. NTMFS5C604NL - A newer model with equivalent electrical characteristics.
Always check the datasheets for exact specifications to ensure compatibility with your application.
Features
The STP150N10F7 is an N-channel MOSFET from STMicroelectronics designed for high-efficiency power switching applications. Key features include:
1. Voltage and Current Ratings: It can handle a drain-source voltage (V_ds) of up to 100V and a continuous drain current (I_d) of 120A at 25°C.
2. R_ds(on): The device offers a low on-state resistance, with a maximum R_ds(on) of 4.5 mΩ, which contributes to reduced power losses and increased efficiency.
3. Package Type: It is available in a TO-220 package, providing ease of mounting with good thermal performance.
4. Fast Switching: The MOSFET is designed for fast switching, suitable for applications demanding high-speed operations.
5. Enhanced Power Density: The device supports high power density designs, making it suitable for compact power systems.
6. Applications: Typical applications include DC-DC converters, motor control, and synchronous rectification in switching power supplies.
These features make the STP150N10F7 a versatile choice for power management in industrial and consumer electronics.
1. Voltage and Current Ratings: It can handle a drain-source voltage (V_ds) of up to 100V and a continuous drain current (I_d) of 120A at 25°C.
2. R_ds(on): The device offers a low on-state resistance, with a maximum R_ds(on) of 4.5 mΩ, which contributes to reduced power losses and increased efficiency.
3. Package Type: It is available in a TO-220 package, providing ease of mounting with good thermal performance.
4. Fast Switching: The MOSFET is designed for fast switching, suitable for applications demanding high-speed operations.
5. Enhanced Power Density: The device supports high power density designs, making it suitable for compact power systems.
6. Applications: Typical applications include DC-DC converters, motor control, and synchronous rectification in switching power supplies.
These features make the STP150N10F7 a versatile choice for power management in industrial and consumer electronics.
Pinout
The STP150N10F7 is a N-channel MOSFET typically used for various power switching applications. It comes in a TO-220 package and features three pins:
1. Gate (G): This pin is used to control the ON/OFF state of the MOSFET. By applying a voltage to the gate, the MOSFET can be switched on or off.
2. Drain (D): The drain is the terminal through which the main current flows out when the MOSFET is in the 'on' state. It is connected to the load in most applications.
3. Source (S): The source is the terminal through which the main current enters the MOSFET. This pin is usually connected to the ground or a negative voltage in a circuit.
The STP150N10F7 is designed for high-efficiency power switching, offering features such as low on-state resistance and fast switching speed, making it suitable for applications like power supplies, motor controllers, and DC-DC converters.
1. Gate (G): This pin is used to control the ON/OFF state of the MOSFET. By applying a voltage to the gate, the MOSFET can be switched on or off.
2. Drain (D): The drain is the terminal through which the main current flows out when the MOSFET is in the 'on' state. It is connected to the load in most applications.
3. Source (S): The source is the terminal through which the main current enters the MOSFET. This pin is usually connected to the ground or a negative voltage in a circuit.
The STP150N10F7 is designed for high-efficiency power switching, offering features such as low on-state resistance and fast switching speed, making it suitable for applications like power supplies, motor controllers, and DC-DC converters.
Manufacturer
The STP150N10F7 is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a broad range of semiconductor products. It serves various sectors, including automotive, industrial, personal electronics, and communications equipment. The company is known for its expertise in providing integrated solutions and has a strong focus on innovation and technology advancement. STMicroelectronics is headquartered in Geneva, Switzerland and operates globally with offices and facilities in multiple countries.
Application
The STP150N10F7 is an N-channel MOSFET designed for various applications, particularly where low on-resistance and high efficiency are critical. Key application areas include:
1. Power Supply Units: Used in both AC-DC and DC-DC converters for efficient power management.
2. Motor Control: Ideal for driving motors in industrial and automotive applications.
3. Switching Regulators: Suitable for use in switching mode power supplies.
4. Battery Management: Used in systems requiring efficient battery charging and discharging.
5. Telecommunications: Employed in infrastructure for handling high-power RF signals.
6. Consumer Electronics: Integrated into devices for power regulation and energy savings.
These applications leverage the MOSFET's high-speed switching and thermal performance.
1. Power Supply Units: Used in both AC-DC and DC-DC converters for efficient power management.
2. Motor Control: Ideal for driving motors in industrial and automotive applications.
3. Switching Regulators: Suitable for use in switching mode power supplies.
4. Battery Management: Used in systems requiring efficient battery charging and discharging.
5. Telecommunications: Employed in infrastructure for handling high-power RF signals.
6. Consumer Electronics: Integrated into devices for power regulation and energy savings.
These applications leverage the MOSFET's high-speed switching and thermal performance.
Package
The STP150N10F7 is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) packaged in a TO-220 form factor. This package type is suitable for high-power applications and provides efficient heat dissipation, making it ideal for use in power management and switching applications.
