Изображения являются только для ссылки
STP110N7F6
+БОМMOSFET N-CHANNEL 68V 110A TO220
-
ПроизводительSTМикроэлектроника
-
Мфр. Часть #STP110N7F6
-
В наличии1818
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Series | STripFET™ F6 |
| Part Status | Obsolete |
| Base Product Number | STP110 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 68 V |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 55A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5850 pF @ 25 V |
| Power Dissipation (Max) | 176W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
| Package | TO-220-3 |
| Packaging | Tube |
Обзор
Description
Key features of the STP110N7F6 might include:
1. Low On-State Resistance: This feature helps to reduce power loss and improve efficiency in applications.
2. High-Speed Switching: Facilitates rapid changes in states, essential for modern electronic devices.
3. Robust Design: Can handle high voltage and current levels, making it suitable for demanding applications.
4. Thermal Performance: Designed to dissipate heat efficiently, ensuring reliability and stability under load.
Incorporating these features, the STP110N7F6 is versatile and efficient, particularly beneficial in energy-sensitive and high-performance applications. For detailed specifications and usage, referring to the manufacturer's datasheet is recommended.
Equivalent
1. IRF3205 by Infineon Technologies
2. FDP047N10 by ON Semiconductor
3. AUIRFS3004-7P by Infineon Technologies
4. IPP110N10N3 G by Infineon Technologies
Always verify pin configurations and ratings to ensure compatibility.
Features
1. Drain-Source Voltage (Vds): It has a maximum drain-source voltage rating of 70V, making it suitable for moderate voltage applications.
2. Continuous Drain Current (Id): The device can handle a continuous drain current of up to 110A, which is ideal for high-power applications.
3. Rds(on): It offers a low on-resistance, typically around 4.5 mΩ, which ensures efficient operation with minimal power loss.
4. Gate Threshold Voltage (Vgs(th)): The gate threshold voltage is between 2V and 4V, allowing for easy control with standard logic levels.
5. Package: It comes in a TO-220 package, which provides good thermal performance and is widely used in power electronic applications.
6. Temperature Range: The device operates effectively within a wide temperature range, supporting reliable performance in various environmental conditions.
These features make the STP110N7F6 a versatile choice for high-efficiency power switching applications.
Pinout
1. Gate (G): This pin is used to control the MOSFET's operation by applying a voltage to it. The gate voltage determines whether the MOSFET is in an on or off state.
2. Drain (D): This is the pin through which the main current flows when the MOSFET is in the on state. It is connected to the load in most applications.
3. Source (S): This pin is the return path for the main current. It is typically connected to ground or to a negative supply voltage in a circuit.
The STP110N7F6 is designed for high-efficiency switching applications, offering low on-resistance and fast switching capabilities.
Manufacturer
Application
1. Power Management: Used in DC-DC converters and power supply units to improve efficiency and thermal performance.
2. Motor Control: Utilized in driving and controlling motors in industrial and automotive applications.
3. Switching Circuits: Ideal for high-speed switching applications in consumer electronics and communication devices.
4. Battery Management: Applied in battery protection and charging circuits, particularly in portable devices.
5. Lighting Systems: Used in LED drivers to enhance energy efficiency and control.
Its robust design makes it suitable for both industrial and consumer electronics.
Package
Frequently Asked Questions
Q: What is the maximum drain-to-source voltage for the STP110N7F6?
A: The maximum drain-to-source voltage (Vdss) is 68 V, suitable for 48V and 60V bus applications.
Q: What is the continuous drain current rating at 25°C?
A: It can handle a continuous drain current (Id) of 110A (Tc) at 25°C, ideal for high-current power switching.
Q: What is the maximum on-resistance (Rds On) value?
A: The maximum Rds On is 6.5 mOhm at 55A drain current and 10V gate drive, ensuring low conduction losses.
Q: Does this MOSFET require a specific gate drive voltage?
A: Yes, it requires a 10V gate drive for optimal performance, with a maximum Vgs rating of ±20V for safe operation.
Q: What is the typical gate charge (Qg) for fast switching?
A: The maximum gate charge is 100 nC at Vgs=10V, enabling efficient high-frequency switching in power converters.
Q: Can it operate in high-temperature environments?
A: Yes, the operating temperature range is -55°C to 175°C (junction), suitable for harsh industrial and automotive environments.
Q: What package type is this device available in?
A: It comes in a Through-Hole TO-220-3 package, providing excellent thermal dissipation for high-power applications up to 176W.
