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STW56N60M2
+БОМMOSFET N-CH 600V 52A TO247
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ПроизводительSTМикроэлектроника
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Мфр. Часть #STW56N60M2
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Лист данных STW56N60M2 DataSheet
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В наличии6537
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | MDmesh™ M2 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 52A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 55mOhm @ 26A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 91 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 3750 pF @ 100 V |
| PowerDissipation(Max) | 350W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
Обзор
Description
The STW56N60M2 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power conversion applications. Part of STMicroelectronics' MDmesh II Plus series, this device is optimized for use in power supplies, converters, and electronic equipment where high performance and reliability are crucial.
Key specifications include:
1. Voltage and Current Ratings: The STW56N60M2 can handle a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) up to 56A.
2. Low On-State Resistance: It features a low R_DS(on), which minimizes conduction losses, improving overall efficiency.
3. Fast Switching: The device supports fast switching speeds, enhancing performance in high-frequency applications.
4. Thermal Performance: It is designed to manage heat effectively, ensuring stable operation under varying thermal conditions.
5. Applications: Typical applications include AC-DC and DC-DC converters, motor drivers, and uninterruptible power supplies (UPS).
The STW56N60M2 is suitable for power electronics engineers seeking a reliable and efficient solution for demanding power management tasks.
Key specifications include:
1. Voltage and Current Ratings: The STW56N60M2 can handle a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) up to 56A.
2. Low On-State Resistance: It features a low R_DS(on), which minimizes conduction losses, improving overall efficiency.
3. Fast Switching: The device supports fast switching speeds, enhancing performance in high-frequency applications.
4. Thermal Performance: It is designed to manage heat effectively, ensuring stable operation under varying thermal conditions.
5. Applications: Typical applications include AC-DC and DC-DC converters, motor drivers, and uninterruptible power supplies (UPS).
The STW56N60M2 is suitable for power electronics engineers seeking a reliable and efficient solution for demanding power management tasks.
Equivalent
The STW56N60M2 is a power MOSFET, and its equivalent products include:
1. IRFP460 (International Rectifier)
2. NXP PSMN1R8-60PS
3. Vishay IRFP460PBF
4. Infineon IPW60R041C6
5. Fairchild FCB47N60N
Make sure to verify the specifications and compatibility for your specific application, as minor differences might exist between these components.
1. IRFP460 (International Rectifier)
2. NXP PSMN1R8-60PS
3. Vishay IRFP460PBF
4. Infineon IPW60R041C6
5. Fairchild FCB47N60N
Make sure to verify the specifications and compatibility for your specific application, as minor differences might exist between these components.
Features
The STW56N60M2 is a N-channel Power MOSFET featuring several key attributes ideal for high-performance applications. It belongs to the MDmesh™ M2 series, which is known for its high efficiency and low power losses. Key features include:
1. Voltage Rating: It has a drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of 52A at 25°C and 36A at 100°C.
3. Low On-Resistance: The device offers an R_DS(on) of 0.070 Ohms, ensuring minimal power loss and efficient performance.
4. Fast Switching: With low gate charge (Q_g), it supports rapid switching, improving overall efficiency in switching mode power supplies.
5. Robust Design: The STW56N60M2 is designed to withstand high energy in avalanche conditions.
6. Package: It is available in a TO-247 package, providing enhanced thermal performance.
These features make the STW56N60M2 ideal for use in power conversion, motor control, and industrial applications.
1. Voltage Rating: It has a drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of 52A at 25°C and 36A at 100°C.
3. Low On-Resistance: The device offers an R_DS(on) of 0.070 Ohms, ensuring minimal power loss and efficient performance.
4. Fast Switching: With low gate charge (Q_g), it supports rapid switching, improving overall efficiency in switching mode power supplies.
5. Robust Design: The STW56N60M2 is designed to withstand high energy in avalanche conditions.
6. Package: It is available in a TO-247 package, providing enhanced thermal performance.
These features make the STW56N60M2 ideal for use in power conversion, motor control, and industrial applications.
Pinout
The STW56N60M2 is a power MOSFET from STMicroelectronics. It features:
- Pin Count: Typically, this component comes in a TO-247 package, which generally has 3 pins.
- Pin Functions:
1. Gate (G): The gate terminal is used to control the switching of the MOSFET. By applying a voltage to the gate, you determine whether the MOSFET is on (conducting) or off (non-conducting).
2. Drain (D): The drain is the terminal through which the main current enters the MOSFET when it is in the 'on' state.
3. Source (S): The source is the terminal through which the current exits the MOSFET back to the circuit.
This device is part of the MDmesh II Plus series and is designed for applications requiring efficient and robust switching, such as in power supplies and converters. It supports high-voltage operations up to 600V and offers low on-state resistance, making it suitable for high-efficiency power applications.
- Pin Count: Typically, this component comes in a TO-247 package, which generally has 3 pins.
- Pin Functions:
1. Gate (G): The gate terminal is used to control the switching of the MOSFET. By applying a voltage to the gate, you determine whether the MOSFET is on (conducting) or off (non-conducting).
2. Drain (D): The drain is the terminal through which the main current enters the MOSFET when it is in the 'on' state.
3. Source (S): The source is the terminal through which the current exits the MOSFET back to the circuit.
This device is part of the MDmesh II Plus series and is designed for applications requiring efficient and robust switching, such as in power supplies and converters. It supports high-voltage operations up to 600V and offers low on-state resistance, making it suitable for high-efficiency power applications.
Manufacturer
The STW56N60M2 is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products and solutions. It is a leading player in the semiconductor industry and serves various markets, including automotive, industrial, personal electronics, computer, and communication equipment. The company is headquartered in Geneva, Switzerland, and is known for its innovation and technology solutions that help drive advancements in electronics.
Application
The STW56N60M2 is an N-channel MOSFET designed for high-efficiency power applications. Its primary application areas include:
1. Switching Power Supplies: Widely used in SMPS for improved efficiency and thermal performance.
2. Motor Control: Effective in motor drives and industrial automation for precise control.
3. Renewable Energy: Utilized in solar inverters and wind energy systems for efficient energy conversion.
4. Telecommunications: Supports high-efficiency power amplification in telecom infrastructure.
5. Lighting: Used in LED drivers and other lighting systems for energy-efficient operation.
6. Automotive: Employed in electric vehicle powertrains and other automotive electronics for robust performance.
These applications leverage the MOSFET's high voltage capacity, fast switching speeds, and low on-state resistance.
1. Switching Power Supplies: Widely used in SMPS for improved efficiency and thermal performance.
2. Motor Control: Effective in motor drives and industrial automation for precise control.
3. Renewable Energy: Utilized in solar inverters and wind energy systems for efficient energy conversion.
4. Telecommunications: Supports high-efficiency power amplification in telecom infrastructure.
5. Lighting: Used in LED drivers and other lighting systems for energy-efficient operation.
6. Automotive: Employed in electric vehicle powertrains and other automotive electronics for robust performance.
These applications leverage the MOSFET's high voltage capacity, fast switching speeds, and low on-state resistance.
Package
The STW56N60M2 is typically housed in a TO-247 package.
