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SUD50P04-08-GE3
+БОМMOSFET P-CH 40V 50A TO252
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ПроизводительVishay Силиконикс
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Мфр. Часть #SUD50P04-08-GE3
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Лист данных SUD50P04-08-GE3 DataSheet
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Пакет TO-252-3
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В наличии5363
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain(Id) @ 25°C | 50A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 8.1mOhm @ 22A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 159 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 5380 pF @ 20 V |
| Power Dissipation (Max) | 2.5W (Ta), 73.5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
Обзор
Description
If this component is a transistor, for example, the code could specify parameters like its maximum current and voltage ratings, its gain bandwidth, or packaging style. These details are crucial for engineers and technicians in selecting the right component for their particular application, ensuring compatibility and performance within electronic circuits.
For precise details, one would typically refer to the datasheet provided by the manufacturer. The datasheet includes comprehensive information such as electrical characteristics, pin configuration, thermal data, and application notes. Accessing this document would provide the necessary understanding to effectively utilize the component in a design or troubleshooting scenario.
Equivalent
Features
1. Voltage and Current Ratings: It operates with a maximum drain-source voltage (V_DS) of -40V and can handle a continuous drain current (I_D) of -50A.
2. R_DS(on): The MOSFET features a low on-state resistance, typically around 0.008 ohms, which ensures minimal power loss and heat generation.
3. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from -2V to -4V, making it suitable for low-voltage gate drive applications.
4. Package Type: It is available in a D2PAK (TO-263) package, offering excellent thermal performance and easy soldering for surface mounting.
5. Temperature Range: The device operates efficiently in a wide junction temperature range, enhancing its reliability under varying environmental conditions.
6. Applications: Commonly used in power management, DC-DC converters, and as a switch in various electronic circuits.
These features make it a versatile component for efficient power switching and management in electronic devices.
Pinout
1. Gate (G): This pin controls the MOSFET's on/off state by varying the voltage applied to it.
2. Drain (D): The pin where the main current enters the MOSFET when it is on.
3. Source (S): The pin where the main current exits the MOSFET, typically connected to ground or a negative voltage in P-channel devices.
4. Tab: Often connected to the drain, used for thermal management.
This MOSFET is used for switching and amplifying electronic signals in various applications, leveraging its P-channel characteristics for efficient power management.
Manufacturer
Vishay's components are used across a wide range of industries, including automotive, industrial, computing, consumer electronics, telecommunications, military, aerospace, and medical markets. The company is known for its innovation and commitment to quality, consistently expanding its product offerings to meet the evolving needs of its customers. Vishay operates globally, with manufacturing facilities in Asia, Europe, and the Americas, ensuring broad distribution and support capabilities.