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Спецификации
| Атрибут | Ценность |
| Supplier | Toshiba Semiconductor and Storage |
| Package / Case | Tape & Reel (TR) |
| Part Status | Obsolete |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain(Id) @ 25°C | 9A, 7.4A |
| Rds On(Max) @ Id Vgs | 17mOhm @ 4.5A, 10V |
| Vgs(th)(Max) @ Id | 2.3V @ 100µA |
| Gate Charge(Qg)(Max) @ Vgs | 17nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 1190pF @ 10V |
| Power - Max | 450mW |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
