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VNL5050N3TR-E
+БОМIC PWR DRIVER N-CHAN 1:1 SOT223
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ПроизводительSTМикроэлектроника
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Мфр. Часть #VNL5050N3TR-E
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Лист данных VNL5050N3TR-E DataSheet
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Пакет SOT-223
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В наличии5305
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | OMNIFET III™, VIPower™ |
| ProductStatus | Active |
| SwitchType | General Purpose |
| NumberofOutputs | 1 |
| Ratio-Input:Output | 1:1 |
| OutputConfiguration | Low Side |
| OutputType | N-Channel |
| Interface | On/Off |
| Voltage-Load | 36V (Max) |
| Voltage-Supply(Vcc/Vdd) | 3.5V ~ 5.5V |
| Current-Output(Max) | 19A |
| RdsOn(Typ) | 50mOhm (Max) |
| InputType | Non-Inverting |
| Features | Auto Restart |
| FaultProtection | Current Limiting (Fixed), Over Temperature, Over Voltage |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-223 |
Обзор
Description
Key features include:
1. Protection: It offers built-in protection against overload, short-circuit, over-temperature, and ground disconnection to ensure reliable operation under various conditions.
2. Diagnostics: The device provides real-time feedback on load status, facilitating efficient fault detection and system maintenance. This includes open-load detection and short-to-ground diagnostics.
3. Power Management: The VNL5050N3TR-E is designed for low power dissipation, contributing to overall system efficiency. It also includes an active current limitation feature.
4. Control Interface: It can be easily interfaced with microcontrollers, using a digital input pin for ON/OFF control.
This component is typically packaged in a PowerSSO-12, making it suitable for space-constrained applications while ensuring adequate thermal performance.
Equivalent
Features
1. N-channel MOSFET: It offers efficient switching performance, typically used for high-speed switching.
2. Voltage Rating: The device can handle a maximum drain-source voltage (V_DS) of around 50V.
3. Current Handling: It supports a continuous drain current (I_D) that allows it to manage substantial power levels.
4. Low On-Resistance: The MOSFET features a low on-resistance (R_DS(on)), ensuring minimal power loss and higher efficiency in applications.
5. Package: The component is available in a surface-mount package (often DPAK or similar), which is ideal for compact PCB designs.
6. Thermal Performance: It provides good thermal efficiency to handle heat dissipation effectively.
7. Applications: Commonly used in power management circuits, DC-DC converters, power supplies, and motor control applications.
These features make the VNL5050N3TR-E suitable for various applications requiring efficient power management and high-speed switching capabilities.
Pinout
1. Pin 1 (Input/Gate): Used for controlling the MOSFET's switching operation.
2. Pin 2 (Drain/Output): Connects to the load being driven.
3. Pin 3 (Source/Ground): Connected to the ground.
Additionally, the tab on the package is also connected to the Drain, providing a path for heat dissipation and additional electrical connection.
The VNL5050N3TR-E is utilized mainly for controlling high current loads in automotive applications, leveraging its robustness and reliability in harsh environments.