Изображения являются только для ссылки
W29N02GZBIBF
+БОМIC FLASH 2GBIT PARALLEL 63VFBGA
-
Производителькомпанией Winbond Electronics
-
Мфр. Часть #W29N02GZBIBF
-
В наличии4162
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Series | SpiFlash® |
| Part Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND (SLC) |
| Memory Size | 2Gbit |
| Memory Organization | 256M x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 35ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 63-VFBGA |
| Supplier Device Package | 63-VFBGA (9x11) |
| Access Time | 25 ns |
Обзор
Description
The W29N02GZBIBF offers high-density storage capabilities in a compact form factor, making it suitable for compact devices. It supports multiple read and write cycles, providing a balance of speed and endurance for data processing tasks. Like other NAND Flash products, it involves block-based operations, requiring data to be read, written, or erased in blocks rather than bytes, which is typical for flash memory.
Its design and architecture ensure efficient power consumption, enhancing the overall energy efficiency of the host device. The chip's compatibility with various interfaces also allows for easy integration into different system architectures.
Equivalent
Features
1. Capacity: Generally offers substantial storage capacity suitable for a wide range of applications.
2. Architecture: Based on NAND architecture, which is known for efficient storage, fast read and write capabilities, and high-density data storage.
3. Performance: Provides high-speed data transfer rates, improving device responsiveness and data handling.
4. Endurance: Designed to handle numerous program/erase cycles, enhancing the lifespan of the memory in write-intensive applications.
5. Compatibility: Compatible with various interfaces, making it versatile for integration into different systems.
6. Error Correction: Includes built-in error correction codes (ECC) to ensure data integrity and reliability.
7. Power Efficiency: Optimized for low power consumption, contributing to energy efficiency in electronic devices.
8. Package Type: Comes in a compact package suitable for modern electronic designs with space constraints.
These features make the W29N02GZBIBF ideal for use in consumer electronics, industrial applications, and other devices requiring reliable and efficient data storage solutions.
Pinout
The primary functions of the pins include:
1. I/O Pins: Used for data input and output.
2. CLE (Command Latch Enable): Activates the command register.
3. ALE (Address Latch Enable): Activates the address register.
4. CE# (Chip Enable): Enables the chip for operation.
5. WE# (Write Enable): Controls data writing.
6. RE# (Read Enable): Controls data reading.
7. WP# (Write Protect): Protects the data from being programmed or erased.
8. R/B# (Ready/Busy): Indicates the status of the device.
9. VCC and VSS: Power supply and ground pins.
These pins work in conjunction to facilitate the reading, writing, and erasing of data within the NAND flash memory. For precise pin count and functions, refer to the specific datasheet for the package type you're interested in.
Manufacturer
Application
1. Consumer Electronics: Used in smartphones, tablets, and digital cameras for storage.
2. Embedded Systems: Integral in automotive electronics, industrial equipment, and IoT devices for firmware and data storage.
3. Computing: Utilized in solid-state drives (SSDs) and USB flash drives for high-speed data access.
4. Networking: Employed in routers and network equipment for configuration data and logs.
5. Medical Devices: Ensures reliable storage of critical data in medical equipment.
Its high capacity, reliability, and speed make it ideal for any application needing durable storage solutions.