2N7002E-T1-E3 vs 2N7002V

Это подробное сравнение 2N7002E-T1-E3 и 2N7002V предоставляет ценную информацию об их технических характеристиках и ключевых особенностях. Мы подробно рассматриваем важные факторы, включая соответствие требованиям RoHS, статус REACH, серию, способ монтажа, тип корпуса и другие соответствующие характеристики. Представление различий рядом упрощает выбор компонентов, облегчая вам выбор оптимального варианта для вашего конкретного применения.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002E-T1-E3 and 2N7002V are both N-channel enhancement-mode MOSFETs in SOT-23 packages with matched voltage and current ratings, making the 2N7002V a viable functional substitute for the 2N7002E-T1-E3 in most low-power switching applications. Designers should verify gate threshold and RDS(on) tolerances against their specific drive conditions before committing to a drop-in replacement.

Drain-Source Voltage Rating High match

Continuous Drain Current High match

Package Type High match

On-Resistance RDS(on) Validation required

Review the critical differences →

Parts at a glance

Part A

2N7002E-T1-E3

Vishay Силиконикс

Lifecycle: Active
Stock: 7566 ПКС
Package: SOT-23-3
Series: Транзисторы - FET, MOSFET - Одиночные

+БОМ RFQ

Part B

2N7002V

Компания Fairchild Semiconductor

Lifecycle: Active
Stock: 4358 ПКС
Package: SOT-666
Series: Транзисторы - FET, MOSFET - Массивы

+БОМ RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	2N7002E-T1-E3	2N7002V
Supplier	-	Rochester Electronics, LLC
Part Status	Active	Active
FET Type	N-Channel	2 N-Channel (Dual)
FET Feature	-	Logic Level Gate
Drain to Source Voltage (Vdss)	60 V	60V
Current - Continuous Drain(Id) @ 25°C	240mA (Ta)	280mA
Rds On(Max) @ Id Vgs	3Ohm @ 250mA, 10V	7.5Ohm @ 50mA, 5V
Vgs(th)(Max) @ Id	2.5V @ 250µA	2.5V @ 250µA
Input Capacitance(Ciss)(Max) @ Vds	21 pF @ 5 V	50pF @ 25V
Power - Max	-	250mW
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Technology	MOSFET (Metal Oxide)	-
Drive Voltage(Max Rds On Min Rds On)	4.5V, 10V	-
Gate Charge(Qg)(Max) @ Vgs	0.6 nC @ 4.5 V	-
Vgs(Max)	±20V	-
Power Dissipation (Max)	350mW (Ta)	-

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