2N7002E-T1-E3 vs 2N7002V-TP

Это подробное сравнение 2N7002E-T1-E3 и 2N7002V-TP предоставляет ценную информацию об их технических характеристиках и ключевых особенностях. Мы подробно рассматриваем важные факторы, включая соответствие требованиям RoHS, статус REACH, серию, способ монтажа, тип корпуса и другие соответствующие характеристики. Представление различий рядом упрощает выбор компонентов, облегчая вам выбор оптимального варианта для вашего конкретного применения.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002E-T1-E3 and 2N7002V-TP are both N-channel enhancement-mode MOSFETs in SOT-23 packages with matched drain-source voltage, continuous drain current, and power dissipation ratings, making them functionally interchangeable in most low-power switching and level-shifting applications. Designers should verify gate threshold voltage tolerance and RDS(on) at the specific drive voltage used in their circuit before committing to a drop-in substitution.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Gate Threshold Voltage Validation required
On-Resistance RDS(on) Validation required

Review the critical differences →

Parts at a glance

Part A

2N7002E-T1-E3

Vishay Силиконикс

Lifecycle
Active
Stock
7566 ПКС
Package
SOT-23-3
Series
Транзисторы - FET, MOSFET - Одиночные
+БОМ RFQ
Part B

2N7002V-TP

Микрокоммерческая компания

Lifecycle
Active
Stock
2855 ПКС
Package
SOT-666
Series
Транзисторы - FET, MOSFET - Массивы
+БОМ RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002E-T1-E3 2N7002V-TP
Supplier - Micro Commercial Co
Part Status Active Obsolete
FET Type N-Channel 2 N-Channel (Dual)
FET Feature - Standard
Drain to Source Voltage (Vdss) 60 V 60V
Current - Continuous Drain(Id) @ 25°C 240mA (Ta) 280mA
Rds On(Max) @ Id Vgs 3Ohm @ 250mA, 10V 2Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Input Capacitance(Ciss)(Max) @ Vds 21 pF @ 5 V 50pF @ 25V
Power - Max - 150mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Technology MOSFET (Metal Oxide) -
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V -
Gate Charge(Qg)(Max) @ Vgs 0.6 nC @ 4.5 V -
Vgs(Max) ±20V -
Power Dissipation (Max) 350mW (Ta) -
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