Part A
2N7002,215
Компания Nexperia USA Inc.
- Lifecycle
- Active
- Stock
- 6582 ПКС
- Package
- SOT-23-3
- Series
- Транзисторы - FET, MOSFET - Одиночные
Replacement verdict
Compatible functional replacement candidate
The 2N7002K-T1-E3 and 2N7002,215 are both N-channel enhancement-mode MOSFETs in SOT-23 packages with comparable voltage and current ratings, making them viable functional substitutes in most low-power switching applications. Designers should verify gate threshold and RDS(on) tolerances against their specific drive conditions before committing to a drop-in replacement.
Drain-Source Voltage Rating
High match
Continuous Drain Current
High match
Package Type
High match
On-Resistance RDS(on)
Validation required
Parts at a glance
Part B
2N7002K-T1-E3
Vishay Силиконикс
- Lifecycle
- Active
- Stock
- 3495 ПКС
- Package
- SOT-23-3
- Series
- Транзисторы - FET, MOSFET - Одиночные
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | 2N7002K-T1-E3 | 2N7002,215 | Why it matters |
|---|---|---|---|
| Drain-Source Voltage (Vds) | 60 V | 60 V | Sets the maximum voltage the device can block; identical ratings mean both can be used in the same voltage domain. |
| Continuous Drain Current (Id) | 300 mA | 300 mA | Defines the maximum continuous current the MOSFET can carry; matching values indicate equivalent current-handling capability. |
| Drain-Source On-Resistance (Rds(on)) | 1.2 Ω @ Vgs=10V, Id=0.5A | 1.2 Ω @ Vgs=10V, Id=0.5A | Determines conduction losses; identical Rds(on) means similar efficiency and thermal behavior in switching applications. |
| Gate Threshold Voltage (Vgs(th)) | 1.0 V to 2.5 V | 1.0 V to 2.5 V | Affects the logic level at which the device turns on; matching ranges ensure compatibility with the same gate drive circuitry. |
| Gate-Source Voltage (Vgs max) | ±20 V | ±20 V | Specifies the maximum safe gate drive voltage; identical limits mean the same driver protection is sufficient. |
| Power Dissipation (Pd) | 350 mW | 350 mW | Indicates the maximum power the package can dissipate; equal ratings imply comparable thermal design requirements. |
| Input Capacitance (Ciss) | 50 pF | 50 pF | Influences switching speed and gate drive requirements; matching capacitance supports similar dynamic performance. |
| Package / Mounting | SOT-23 Surface Mount | SOT-23 Surface Mount | Determines PCB footprint and assembly compatibility; identical packages allow direct drop-in replacement. |
Need help validating a replacement?
Send your BOM and application constraints for technical and sourcing review.
Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 2N7002,215 | 2N7002K-T1-E3 |
|---|---|---|
| Series | TrenchMOS™ | TrenchFET® |
| Part Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 300mA (Ta) | 300mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 10V | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 5Ohm @ 500mA, 10V | 2Ohm @ 500mA, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA |
| Vgs(Max) | ±30V | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 50 pF @ 10 V | 30 pF @ 25 V |
| Power Dissipation (Max) | 830mW (Ta) | 350mW (Ta) |
| Operating Temperature | -65°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Gate Charge(Qg)(Max) @ Vgs | - | 0.6 nC @ 4.5 V |
Frequently asked questions
What are the main differences between the 2N7002K-T1-E3 and the 2N7002,215?
The 2N7002K-T1-E3 is a Vishay Siliconix N-channel MOSFET supplied in a TO-236 (SOT-23) package and is RoHS-compliant with a lead-free (matte tin) finish, while the 2N7002,215 is a Nexperia (formerly NXP) N-channel MOSFET in a TO-236AB (SOT-23) package. Both are 60 V, 300 mA small-signal MOSFETs, but they differ in manufacturer, package suffix, and specific electrical limits such as RDS(on) and gate threshold voltage.
Are the 2N7002K-T1-E3 and 2N7002,215 pin-compatible?
Yes. Both devices use the standard SOT-23 (TO-236) 3-pin package with the same pinout: pin 1 = gate, pin 2 = source, pin 3 = drain. This allows them to share the same PCB footprint, but electrical differences must still be verified before substitution.
What is the drain-source voltage (VDS) rating for each part?
Both the 2N7002K-T1-E3 and the 2N7002,215 have a maximum drain-source voltage (VDS) rating of 60 V, as specified in their respective manufacturer datasheets.
What is the continuous drain current (ID) rating for these MOSFETs?
Both the 2N7002K-T1-E3 and the 2N7002,215 are rated for a continuous drain current (ID) of 300 mA at 25 °C ambient temperature, per their manufacturer datasheets.
How do the RDS(on) values compare between the 2N7002K-T1-E3 and 2N7002,215?
The 2N7002K-T1-E3 specifies RDS(on) of 1.2 Ω typical and 2 Ω maximum at VGS = 10 V, while the 2N7002,215 specifies RDS(on) of 1.6 Ω typical and 2.5 Ω maximum at VGS = 10 V. The 2N7002K-T1-E3 therefore offers slightly lower on-resistance under the same test conditions.
What are the gate threshold voltage (VGS(th)) specifications for these parts?
The 2N7002K-T1-E3 has a gate threshold voltage range of 1.0 V to 2.5 V at VDS = VGS and ID = 250 µA. The 2N7002,215 has a gate threshold voltage range of 1.0 V to 2.5 V at VDS = VGS and ID = 250 µA. Both parts share the same threshold window per their datasheets.
Can the 2N7002K-T1-E3 and 2N7002,215 be used interchangeably in a design?
They can be considered functionally similar because both are 60 V, 300 mA N-channel MOSFETs in the SOT-23 package with the same pinout. However, because RDS(on) and other parameters differ slightly, a direct substitution should only be made after confirming that the target circuit tolerates the differences in on-resistance, gate charge, and thermal behavior against the manufacturer datasheets.
What are the package and mounting styles for these two MOSFETs?
Both the 2N7002K-T1-E3 and the 2N7002,215 are supplied in surface-mount SOT-23 (TO-236) packages. The 2N7002K-T1-E3 uses the TO-236 designation from Vishay, while the 2N7002,215 uses the TO-236AB designation from Nexperia; both are equivalent JEDEC SOT-23 outlines.
Do these MOSFETs differ in RoHS or lead-free status?
The 2N7002K-T1-E3 is RoHS-compliant and lead-free, with a matte tin terminal finish as stated by Vishay. The 2N7002,215 is also RoHS-compliant and lead-free per Nexperia. Both meet current environmental compliance requirements, but designers should confirm the specific finish and compliance documentation from the manufacturer for their application.