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Спецификации
| Атрибут | Ценность |
| Package / Case | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 160 V |
| Current - Continuous Drain(Id) @ 25°C | 7A (Ta) |
| Vgs(Max) | ±15V |
| Input Capacitance(Ciss)(Max) @ Vds | 600 pF @ 10 V |
| Power Dissipation (Max) | 100W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3P |
Обзор
Description
The 2SK1058-E is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic applications for amplifying or switching electronic signals. It is part of the lateral MOSFET family, known for their use in audio amplifiers due to their superior thermal stability and linearity compared to vertical MOSFETs. The "E" variant usually refers to a specific version or grading of the transistor.
Key features of the 2SK1058 include high-speed operation, low on-resistance, and good thermal performance. It is designed to handle significant amounts of power, making it suitable for high-fidelity audio equipment. The device is often used in complementary pairs with its counterpart, the 2SJ162, to provide push-pull amplification.
The 2SK1058-E typically comes in a TO-3P package, which offers robust mechanical stability and efficient heat dissipation. Its performance characteristics make it a popular choice for high-quality audio applications and other demanding electronic circuits where reliability and precision are critical.
Key features of the 2SK1058 include high-speed operation, low on-resistance, and good thermal performance. It is designed to handle significant amounts of power, making it suitable for high-fidelity audio equipment. The device is often used in complementary pairs with its counterpart, the 2SJ162, to provide push-pull amplification.
The 2SK1058-E typically comes in a TO-3P package, which offers robust mechanical stability and efficient heat dissipation. Its performance characteristics make it a popular choice for high-quality audio applications and other demanding electronic circuits where reliability and precision are critical.
Equivalent
The 2SK1058-E is a power MOSFET commonly used in audio amplifier applications. Equivalent products include the BUZ900, BUZ901, and 2SJ162, which are also MOSFETs designed for similar uses. When selecting an equivalent, ensure parameters like voltage, current, and package type match your application requirements. It's also important to check specific datasheets for detailed specifications and compatibility.
Features
The 2SK1058-E is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. Key features include:
1. N-Channel Type: It's an N-channel MOSFET, which is commonly used for high-efficiency power conversion.
2. High Voltage Capability: The device can handle high voltages, making it suitable for various power applications.
3. Enhanced Switching Speed: Optimized for rapid switching, which improves efficiency in applications like power supplies and motor controllers.
4. Low On-Resistance: Features low on-state resistance, reducing power loss and improving overall system efficiency.
5. High Current Capacity: Capable of driving significant current, which is essential for demanding power applications.
6. Rugged Design: Built to withstand harsh operating conditions, offering reliability and durability.
7. TO-3P Package: Comes in a TO-3P package, which provides good heat dissipation and is suitable for mounting on heat sinks.
These features make the 2SK1058-E a versatile component for various industrial and consumer electronic applications.
1. N-Channel Type: It's an N-channel MOSFET, which is commonly used for high-efficiency power conversion.
2. High Voltage Capability: The device can handle high voltages, making it suitable for various power applications.
3. Enhanced Switching Speed: Optimized for rapid switching, which improves efficiency in applications like power supplies and motor controllers.
4. Low On-Resistance: Features low on-state resistance, reducing power loss and improving overall system efficiency.
5. High Current Capacity: Capable of driving significant current, which is essential for demanding power applications.
6. Rugged Design: Built to withstand harsh operating conditions, offering reliability and durability.
7. TO-3P Package: Comes in a TO-3P package, which provides good heat dissipation and is suitable for mounting on heat sinks.
These features make the 2SK1058-E a versatile component for various industrial and consumer electronic applications.
Pinout
The 2SK1058-E is a N-channel MOSFET commonly used in audio amplifier applications. It features a total of three pins:
1. Gate: This pin receives the input signal and controls the current flow between the drain and source by varying the voltage.
2. Drain: This pin is the output terminal where the load is connected. It is responsible for the current flow to the load from the source.
3. Source: This pin is connected to the ground or negative supply and acts as the return path for the current.
The 2SK1058-E is known for its high voltage and current handling capabilities, good thermal stability, and low distortion, making it suitable for high-fidelity audio amplification.
1. Gate: This pin receives the input signal and controls the current flow between the drain and source by varying the voltage.
2. Drain: This pin is the output terminal where the load is connected. It is responsible for the current flow to the load from the source.
3. Source: This pin is connected to the ground or negative supply and acts as the return path for the current.
The 2SK1058-E is known for its high voltage and current handling capabilities, good thermal stability, and low distortion, making it suitable for high-fidelity audio amplification.
Manufacturer
The 2SK1058-E is manufactured by Renesas Electronics Corporation. Renesas is a semiconductor company that designs and produces a range of microcontrollers, microprocessors, power management systems, and other semiconductor solutions. Formed in 2010 through the merger of NEC Electronics Corporation and Renesas Technology Corporation, Renesas is one of the leading suppliers in the semiconductor market, particularly in automotive and industrial applications. The company is headquartered in Tokyo, Japan, and is known for its focus on innovation and high-quality products to support various industries worldwide.
Application
The 2SK1058-E is a power MOSFET commonly used in audio amplification, particularly in high-fidelity and professional audio systems due to its performance characteristics. It is also employed in RF amplification, making it suitable for radio transmitters and other communication equipment. Additionally, it can be utilized in switching power supplies and motor control applications where efficient power management is crucial. Its ability to handle high voltage and current makes it a versatile component in various electronic circuits requiring reliable power handling and amplification.
Package
The 2SK1058-E is a N-channel MOSFET commonly used in audio amplifier applications. It is typically available in a TO-3P package, which is a type of transistor outline package designed for power semiconductors.
