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2SK2221-E
+БОМMOSFET N-CH 200V 8A TO3P
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Производителькорпорации Renesas Electronics
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Мфр. Часть #2SK2221-E
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В наличии8956
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 10 V |
| Power Dissipation (Max) | 100W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3P |
| Package / Case | TO-3P-3, SC-65-3 |
| Base Product Number | 2SK2221 |
Обзор
Description
The device offers fast switching speeds, making it ideal for high-frequency applications such as switching power supplies and motor control circuits. Its package types, often in TO-220 or similar configurations, facilitate easy thermal management and integration into circuit designs.
Moreover, the 2SK2221-E has a gate threshold voltage (V_GS(th)) that enables it to operate effectively with low gate drive voltages, which is advantageous for battery-operated devices. Overall, the 2SK2221-E is widely used in consumer electronics, automotive applications, and industrial equipment due to its reliability and efficiency. Always refer to the manufacturer's datasheet for specific electrical characteristics and application guidelines.
Equivalent
Features
1. Voltage Rating: Typically rated for a maximum drain-source voltage (V_DS) of 60V.
2. Current Handling: Can handle continuous drain current (I_D) up to 10A, making it suitable for high-power applications.
3. On-Resistance: Low on-resistance (R_DS(on)), typically around 0.5 ohms, which minimizes power losses during operation.
4. Gate Threshold Voltage: Gate-source threshold voltage (V_GS(th)) typically ranges from 2V to 4V, allowing for efficient drive from low-voltage logic levels.
5. Package Type: Available in various package types, such as TO-220, facilitating easy integration in different circuits.
6. Thermal Performance: Good thermal performance, allowing for effective heat dissipation during operation.
These features make the 2SK2221-E suitable for use in motor drivers, power converters, and other high-efficiency electronic applications.
Pinout
Pin Count and Function:
1. Gate (G): This pin controls the MOSFET and is used to turn it on or off by applying a voltage.
2. Drain (D): The current flows out of this pin when the transistor is on, connecting to the load or circuit.
3. Source (S): This pin is connected to the ground or the negative side of the power supply, serving as the return path for current.
The 2SK2221-E is known for its high-speed switching capabilities and is often used in power management, amplifiers, and switching power supplies. Always refer to the specific datasheet for detailed specifications and electrical characteristics.
Manufacturer
In the semiconductor space, Toshiba is recognized for producing a variety of components, including transistors, diodes, and integrated circuits, which are essential in numerous electronic applications. The 2SK2221-E specifically is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used for switching and amplification in electronic circuits.
Toshiba is known for its commitment to quality and technological advancement, focusing on sustainable solutions and contributions to the global market. The company continues to play a significant role in the development of advanced technologies across multiple industries, making it a key player in the electronics and semiconductor sectors.