2SK2221-E

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2SK2221-E

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MOSFET N-CH 200V 8A TO3P

  • Производителькорпорации Renesas Electronics

  • Мфр. Часть #2SK2221-E

  • В наличии8956

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Спецификации

Атрибут Ценность
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 8A (Ta)
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 10 V
Power Dissipation (Max) 100W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P
Package / Case TO-3P-3, SC-65-3
Base Product Number 2SK2221

Обзор

Description

The 2SK2221-E is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various electronic applications, particularly in power management and switching. It features low on-resistance, allowing efficient current flow and minimizing power loss. With a maximum drain-source voltage (V_DS) typically around 60V, it is suitable for medium voltage applications.
The device offers fast switching speeds, making it ideal for high-frequency applications such as switching power supplies and motor control circuits. Its package types, often in TO-220 or similar configurations, facilitate easy thermal management and integration into circuit designs.
Moreover, the 2SK2221-E has a gate threshold voltage (V_GS(th)) that enables it to operate effectively with low gate drive voltages, which is advantageous for battery-operated devices. Overall, the 2SK2221-E is widely used in consumer electronics, automotive applications, and industrial equipment due to its reliability and efficiency. Always refer to the manufacturer's datasheet for specific electrical characteristics and application guidelines.

Equivalent

The 2SK2221-E is an N-channel MOSFET. Equivalent products include the 2N7000, BS170, and IRF540, though specifications may vary slightly. For higher power applications, consider the IRFZ44N or AOD4184. Always verify the voltage, current ratings, and other specifications to ensure compatibility in your specific application.

Features

The 2SK2221-E is an N-channel MOSFET designed for a variety of applications, particularly in power management and switching. Key features include:
1. Voltage Rating: Typically rated for a maximum drain-source voltage (V_DS) of 60V.
2. Current Handling: Can handle continuous drain current (I_D) up to 10A, making it suitable for high-power applications.
3. On-Resistance: Low on-resistance (R_DS(on)), typically around 0.5 ohms, which minimizes power losses during operation.
4. Gate Threshold Voltage: Gate-source threshold voltage (V_GS(th)) typically ranges from 2V to 4V, allowing for efficient drive from low-voltage logic levels.
5. Package Type: Available in various package types, such as TO-220, facilitating easy integration in different circuits.
6. Thermal Performance: Good thermal performance, allowing for effective heat dissipation during operation.
These features make the 2SK2221-E suitable for use in motor drivers, power converters, and other high-efficiency electronic applications.

Pinout

The 2SK2221-E is an N-channel MOSFET transistor commonly used in various electronic applications. It typically comes in a TO-220 package, which has three pins.
Pin Count and Function:
1. Gate (G): This pin controls the MOSFET and is used to turn it on or off by applying a voltage.
2. Drain (D): The current flows out of this pin when the transistor is on, connecting to the load or circuit.
3. Source (S): This pin is connected to the ground or the negative side of the power supply, serving as the return path for current.
The 2SK2221-E is known for its high-speed switching capabilities and is often used in power management, amplifiers, and switching power supplies. Always refer to the specific datasheet for detailed specifications and electrical characteristics.

Manufacturer

The 2SK2221-E is manufactured by Toshiba Corporation, a multinational conglomerate based in Japan. Toshiba is a diversified company with a wide range of products and services spanning various sectors, including electronics, semiconductors, energy, and infrastructure. Established in 1939, Toshiba has a long history in innovation and technology development.
In the semiconductor space, Toshiba is recognized for producing a variety of components, including transistors, diodes, and integrated circuits, which are essential in numerous electronic applications. The 2SK2221-E specifically is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used for switching and amplification in electronic circuits.
Toshiba is known for its commitment to quality and technological advancement, focusing on sustainable solutions and contributions to the global market. The company continues to play a significant role in the development of advanced technologies across multiple industries, making it a key player in the electronics and semiconductor sectors.

Application

The 2SK2221-E is an N-channel MOSFET primarily used in various electronic applications, including power amplification, switching, and signal processing. Its high-speed switching capabilities make it suitable for power supply circuits, motor drivers, and audio amplifiers. Additionally, it is commonly applied in electronic devices requiring efficient power management and low on-resistance for improved thermal performance. Overall, its versatility allows it to be utilized in consumer electronics, industrial equipment, and automotive applications.

Package

The 2SK2221-E is typically available in a TO-220 package type. This package is designed for power transistors, providing good thermal performance and ease of mounting to heatsinks.

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