| Атрибут |
Ценность |
| Supplier |
Microchip Technology |
| Package |
Tube |
| Series |
POWER MOS 7® |
| ProductStatus |
Active |
| IGBTType |
PT |
| Voltage-CollectorEmitterBreakdown(Max) |
1200 V |
| Current-Collector(Ic)(Max) |
69 A |
| Current-CollectorPulsed(Icm) |
90 A |
| Vce(on)(Max)@VgeIc |
3.9V @ 15V, 25A |
| Power-Max |
417 W |
| SwitchingEnergy |
500µJ (on), 440µJ (off) |
| InputType |
Standard |
| GateCharge |
110 nC |
| Td(on/off)@25°C |
12ns/70ns |
| TestCondition |
600V, 25A, 5Ohm, 15V |
| OperatingTemperature |
-55°C ~ 150°C (TJ) |
| MountingType |
Through Hole |
| Package/Case |
TO-247-3 |
