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AUIRFS8409-7P
+БОМMOSFET N-CH 40V 240A D2PAK
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Производителькомпанией Infineon Technologies
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Мфр. Часть #AUIRFS8409-7P
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В наличии7813
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Series | HEXFET® |
| Part Status | Obsolete |
| Base Product Number | AUIRF8409 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 240A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 0.75mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 460 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 13975 pF @ 25 V |
| Power Dissipation (Max) | 375W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK (7-Lead) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Packaging | Tube |
Обзор
Description
Features
- N-channel enhancement-mode power MOSFET
- VDS around 60 V; suitable for high-side/low-side switching
- Very low RDS(on) (milliohms range) for low conduction loss
- high continuous and pulsed current capability
- Trench MOSFET technology for improved efficiency
- Low gate charge for easy gate driving and fast switching
- Robust body diode and avalanche ruggedness
- 7-pin PowerDI-7 package; Pb-free, RoHS compliant
Pinout
Manufacturer
Type of company: AOS is a global, fabless semiconductor company that designs and supplies power-management and analog semiconductor products—especially MOSFETs, power ICs and discrete power devices—for consumer, computing, communications, industrial and automotive markets.
Application
- Automotive electronics: load switches, motor/solenoid drivers, power rails
- DC-DC converters and power management: high-side/low-side switching, synchronous rectification
- Motor and actuator control: BLDC/stepper motors, solenoids
- LED lighting drivers: constant-current switching
- Industrial and consumer electronics: power supplies, inverters, power-path control
- Energy systems: solar/battery management switching
These MOSFETs are used for high-efficiency switching and power switching in compact, mixed-signal designs.
Package
Frequently Asked Questions
Q: What is the maximum drain-to-source voltage (Vdss) for this MOSFET?
A: The AUIRFS8409-7P has a maximum Vdss of 40 V, suitable for low-voltage automotive applications.
Q: Can this device handle continuous current at 25°C?
A: Yes, it supports a continuous drain current of 240A (Tc) at 25°C, ideal for high-power switching.
Q: What is the typical Rds(on) value at 10V gate drive?
A: The maximum Rds(on) is 0.75 mOhm at 100A and 10V, ensuring low conduction losses.
Q: Is this component qualified for automotive use?
A: Yes, it is grade Automotive and AEC-Q101 qualified, meeting stringent reliability standards.
Q: What is the maximum power dissipation capability?
A: The device can dissipate up to 375W (Tc), allowing robust thermal performance in power circuits.
Q: What is the gate charge for fast switching?
A: The maximum gate charge (Qg) is 460 nC at 10V, enabling efficient switching in high-frequency designs.
Q: What package type is used for this MOSFET?
A: It comes in a TO-263-7 (D2PAK, 7-Lead) surface-mount package, suitable for compact layouts.
