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BSC030N03LSG
+БОМ-
Производителькомпанией Infineon Technologies
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Мфр. Часть #BSC030N03LSG
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В наличии3617
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Manufacturer | Infineon Technologies |
| Package / Case | TDSON-8-EP(6x5) |
Обзор
Description
The "N" denotes that it is an N-channel device, which means it conducts when a positive voltage is applied to the gate relative to the source. The specifications typically include maximum drain-source voltage (VDS), maximum continuous drain current (ID), and gate threshold voltage (VGS(th)). Users should consult the datasheet for precise ratings and characteristics to ensure optimal performance in their applications. Overall, BSC030N03LSG is favored for its reliability and efficiency in modern electronic designs.
Equivalent
Features
1. Voltage Rating: It typically supports a drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Capacity: The device can handle a continuous drain current (I_D) of up to 30A, allowing it to drive significant loads.
3. Low R_DS(on): With a low on-resistance (R_DS(on)) of around 3.3 mΩ at V_GS = 10V, it minimizes power loss during operation, enhancing efficiency.
4. Fast Switching Speed: This MOSFET supports rapid switching, making it ideal for applications in power conversion and motor control.
5. Thermal Performance: It is packaged in a TO-220 format, which aids in effective thermal management.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) typically ranges from 1V to 2.5V, facilitating easy drive with low-voltage control signals.
These features make the BSC030N03LSG suitable for use in power supplies, DC-DC converters, and other power electronics applications.
Pinout
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The terminal where the load is connected; this is the output side.
3. Source (S) - The terminal connected to ground or the lower potential; this is the input side.
4. Tab (often connected to the source) - Used for heat dissipation and may be connected to the source in some packages.
This MOSFET is designed for low on-resistance and high-speed switching applications, commonly used in power management circuits.