IRLR2908TRPBF

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IRLR2908TRPBF

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MOSFET N-CH 80V 30A DPAK

  • Производителькомпанией Infineon Technologies

  • Мфр. Часть #IRLR2908TRPBF

  • Лист данных IRLR2908TRPBF DataSheet

  • В наличии4384

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Спецификации

Атрибут Ценность
Series HEXFET®
Part Status Active
Base Product Number IRLR2908
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 28mOhm @ 23A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 4.5 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 1890 pF @ 25 V
Power Dissipation (Max) 120W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA (DPAK)
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging Cut Tape (CT), Tape & Reel (TR)

Обзор

Description

The IRLR2908TRPBF is a N-channel MOSFET from Infineon, designed for high-efficiency power switching applications. Key features include:
- Low On-Resistance (RDS(on)): 3.5 mΩ (max) at VGS = 10V, reducing conduction losses.
- High Current Handling: Up to 195A (pulsed) and 98A (continuous).
- Fast Switching: Optimized for DC-DC converters, motor drives, and power management.
- Voltage Rating: 30V drain-to-source (VDS), suitable for 12V/24V systems.
- Logic-Level Gate Drive: Fully enhanced at 4.5V (VGS), compatible with microcontrollers.
- TO-252 (DPAK) Package: Compact, surface-mount design with good thermal performance.
Ideal for battery protection, load switches, and automotive applications due to its robustness and efficiency. Always refer to the datasheet for detailed specs and thermal considerations.

Equivalent

Equivalent products to the IRLR2908TRPBF (N-channel MOSFET, 30V, 80A, TO-252) include:
- IRLR2905ZPBF (similar specs, TO-262)
- IRL1004PBF (30V, 130A, TO-220)
- STP80NF55-06 (55V, 80A, TO-220)
- AOD4184 (40V, 84A, TO-252)
Check datasheets for exact compatibility in your application.

Features

The IRLR2908TRPBF is a N-channel HEXFET Power MOSFET with the following key features:
- Voltage Rating: 80V (Drain-to-Source, VDS)
- Current Rating: 42A (Continuous Drain, ID at 25°C)
- Low On-Resistance (RDS(on)): 8.0mΩ (max at VGS = 10V)
- Fast Switching: Optimized for high-efficiency applications
- Gate Drive Voltage (VGS): ±20V (max), typically 10V for full enhancement
- Avalanche Energy Rated: Robust against inductive spikes
- Package: TO-252 (DPAK), surface-mount design
- Low Gate Charge (Qg): Enhances switching performance
Ideal for DC-DC converters, motor control, and power management in automotive, industrial, and consumer electronics.

Pinout

The IRLR2908TRPBF is a TO-252 (DPAK) packaged N-channel MOSFET with 3 pins:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high current terminal).
3. Source (S) – Ground/reference terminal.
Key Features:
- VDS: 80V
- ID: 42A (continuous)
- Low RDS(on): 14mΩ (max at VGS=10V)
- Logic-Level Gate Drive (fully enhanced at 4.5V)
Commonly used in power switching, motor control, and DC-DC converters.

Application

The IRLR2908TRPBF is a power MOSFET commonly used in:
1. Switching Power Supplies – Efficient DC-DC conversion.
2. Motor Control – Drives motors in robotics, automotive, and industrial systems.
3. Load Switching – Controls high-current loads in power management circuits.
4. Battery Management – Used in protection and charging circuits.
5. Inverters & Converters – Supports energy conversion in solar and UPS systems.
Its low on-resistance (RDS(on)) and high current handling (up to 44A) make it ideal for high-efficiency, high-power applications.

Package

The IRLR2908TRPBF is a Power MOSFET available in a TO-252 (DPAK) surface-mount package. This package is compact, suitable for high-power applications, and features a tab for heat dissipation. It is commonly used in switching circuits, power supplies, and motor control. The "TR" suffix indicates it is supplied on a tape-and-reel for automated assembly.

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